Abstract: A semiconductor device includes: a base material having a first terminal; a semiconductor chip having a first electrode pad electrically connected with the first terminal, a second electrode pad to which a power supply potential is to be supplied, and a third electrode pad to which a reference potential is to be supplied, and mounted on the base material via a first member; a chip capacitor having a first electrode and a second electrode, and mounted on the semiconductor chip via a second member; a first wire electrically connecting the first electrode pad with the first terminal; a second wire electrically connecting the second electrode pad with the first electrode without going through the base material; and a third wire electrically connecting the third electrode pad with the second electrode without going through the base material.

Abstract: A width of each of a first signal terminal and a reference potential terminal formed in a first connection region of a core insulating layer constituting a flexible substrate is larger than a width of each of a first backside signal terminal and a backside reference potential terminal formed in a second connection region of the core insulating layer. In addition, a first separation distance between the first signal terminal and the reference potential terminal arranged adjacent to the first signal terminal is smaller than a second separation distance between the first backside signal terminal and the backside reference potential terminal arranged adjacent to the first backside signal terminal. An insulating film formed on a first surface of the core insulating layer at a position overlapping each of the first connection region and the second connection region covers the first connection region such that the second connection region is exposed.

Abstract: Improve semiconductor device performance. The wiring WL1A on which the semiconductor chip CHP1 in which the semiconductor lasers LD is formed is mounted has a stub STB2 in the vicinity of the mounting area of the semiconductor chip CHP1.

Abstract: A performance of an electronic device is improved. An optical transceiver (electronic device) includes a semiconductor device electrically connected to a transmission line. In this semiconductor device, a resistor is arranged between a wiring electrically connected to the transmission line and a semiconductor chip having a semiconductor laser formed therein.

Abstract: Improve semiconductor device performance. The wiring WL1A on which the semiconductor chip CHP1 in which the semiconductor lasers LD is formed is mounted has a stub STB2 in the vicinity of the mounting area of the semiconductor chip CHP1.

Abstract: A performance of an electronic device is improved. An optical transceiver (electronic device) includes a semiconductor device electrically connected to a transmission line. In this semiconductor device, a resistor is arranged between a wiring electrically connected to the transmission line and a semiconductor chip having a semiconductor laser formed therein.