Patents by Inventor Kazufumi Nakayama

Kazufumi Nakayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240124272
    Abstract: A method for judging a winding disorder of a rope onto a drum of a winch includes acquiring a captured image by a camera oriented to the drum, performing, on the basis of the captured image, a judgment on whether the winding disorder of the rope is present or absent and a determination of a disorder degree indicating the degree of the winding disorder, and outputting results of the judgment and the determination.
    Type: Application
    Filed: March 2, 2022
    Publication date: April 18, 2024
    Applicant: KOBELCO CONSTRUCTION MACHINERY CO., LTD.
    Inventors: Teppei MAEDO, Hiroki NAKAYAMA, Kazufumi KUDARA, Yohei OGAWA
  • Publication number: 20240091905
    Abstract: An abrasive slurry regeneration method includes: collecting at least a used abrasive slurry containing an abrasive component and a constituent component of a polishing target object discharged from a polishing machine; inactivating a metal ion dissolved in the used abrasive slurry; dispersing the abrasive component and the constituent component of the polishing target object contained in the used abrasive slurry; separating the dispersed abrasive component and constituent component of the polishing target object to remove the constituent component of the polishing target object; and preparing a regenerated abrasive slurry containing the abrasive component.
    Type: Application
    Filed: August 24, 2023
    Publication date: March 21, 2024
    Inventors: Shin NAKAYAMA, Atsushi Takahashi, Kazufumi Yamazaki, Akihiro Maezawa, Sadatoshi Nishibuchi, Kenichi Tabata
  • Patent number: 3940288
    Abstract: A method of making a semiconductor device capable of high-speed operation is disclosed in which when the current gain-bandwidth is increased by the formation of a shallow base region. A side etching process is used to decrease the base spreading resistance and to allow ease in the formation of an emitter region of fine pattern. When the emitter region is formed by using polycrystalline silicon as a source of impurity diffusion, that area of an insulating film on a semiconductor substrate which adjoins the polycrystalline silicon is removed before the impurity diffusion so as to prevent an abnormal diffusion phenomenon.
    Type: Grant
    Filed: May 10, 1974
    Date of Patent: February 24, 1976
    Assignee: Fujitsu Limited
    Inventors: Mikio Takagi, Hajime Kamioka, Kazufumi Nakayama, Haruo Shimoda