Abstract: A generation laser irradiation device irradiates a weld after welding with a generation laser. A detection laser probe irradiates an ultrasonic detection point that passes through the weld and is capable of detecting an ultrasonic wave reflected on a lower surface of a base material with detection laser. A control device determines existence of an internal defect of the weld based on a measurement result of a laser interferometer. The generation laser irradiation device includes a scanning mechanism that scans an irradiation position of the generation laser in a direction intersecting a welding direction.

Abstract: A production apparatus includes: a rotating body configured to rotate a grindstone to cut a first surface of an object; a holding unit configured to contact a second surface of the object; and a displacement unit configured to displace at least a portion of the second surface of the object in a rotation axis direction of the rotating body.

Abstract: A grinding apparatus according to an embodiment comprises: a table to hold a substrate; a grinding stone driver to be rotatable while holding a grinding stone; and a location adjuster to adjust a relative location between the grinding stone driver and the table. The grinding stone has steps including a first grinding face and a second grinding face, and a first distance between a rotation center of the grinding stone driver and the first grinding face is different from a second distance between the rotation center and the second grinding face. The location adjuster adjusts the relative location from a first state in which the first grinding face is in contact with an end face of the substrate to a second state in which the second grinding face is in contact with the end face.

Abstract: A manufacturing method of a semiconductor device includes thermally curing a thermosetting resin material layer formed on a semiconductor wafer at a first temperature of 100° C. to 200° C. to form a protective film, preheating the semiconductor wafer having the protective film formed therein at a second temperature and removing water on the surface of the protective film, bias sputtering on the preheated semiconductor wafer, then controlling the temperature of the semiconductor wafer to a third temperature of not more than 200° C., and sputtering a material selected from the group consisting of Ti, TiW, Ta, and a conductive Ti compound to form a first conductive underlayer on the protective film.

Abstract: A method and apparatus are set forth capable of processing a substrate with a high uniformity within the surface area even for a thin feeding layer. The method comprises arranging a counter electrode and the substrate to confront each other; providing a membrane between the counter electrode and the substrate to define a substrate side region and a counter electrode side region. The substrate side region and the counter electrode side region are capable of accommodating respective electrolytes. The substrate side region and the counter electrode side region are supplied with respective electrolytes having different specific resistances. A processing current is also supplied between the substrate and the counter electrode.

Abstract: The present invention provides an electrolytic processing apparatus which is capable of increasing an in-plane uniformity of a film thickness of a plated film by making more uniform an electric field distribution over an entire surface to be processed of a substrate even if the substrate has a large area, and controlling more uniformly a speed, over the entire surface to be processed of the substrate.

Abstract: A porous member cleaning method enables effective cleaning of the interior of a porous member even when it has a small pore size, a high density and a large volume. The porous member cleaning method includes: disposing a porous member in a hermetic space, and cleaning the interior of the porous member with a pressurized cleaning liquid passing through the interior of the porous member; and then disposing the porous member in said hermetic space or in a different hermetic space, and supplying pressurized pure water to the interior of the porous member so that the pure water passes through the interior of the porous member.

Abstract: A plating method is capable of depositing a plated film having excellent in-plane uniformity with respect to a thin seed layer and excellent embeddability with respect to fine damascene structures. The plating method includes: positioning an electric resistor between a conductive layer formed on at least a portion of a surface of a substrate and an anode; introducing respectively a plating solution into a space between the conductive layer and the anode on a conductive layer side, and an anode solution into a space between the conductive layer and the anode on an anode side, thereby filling the space with a plating bath composed of the plating solution and the anode solution, with the plating solution containing 25 to 75 g/L of copper ions and at least 0.4 mole/L of an organic acid or an inorganic acid, and the anode solution being of the same composition as the plating solution, or containing 0 to 75 g/L of copper ions and at most 0.

Abstract: A substrate processing apparatus and a substrate processing method can appropriately control the charge of a substrate depending on the type of wet processing, thereby reducing defective processing due to static electricity on the surface of the substrate. The substrate processing apparatus includes: a static electricity adjustment section for adjusting static electricity on a substrate; and a wet processing apparatus for carrying out wet processing of the static electricity-adjusted substrate. The static electricity adjustment section removes static electricity from the substrate or charges the substrate into a desired charged state, for example.

Abstract: A substrate processing apparatus has a plating apparatus configured to plate a substrate to deposit a metal on a surface of the substrate and an additional process apparatus configured to perform an additional process on the substrate. The plating apparatus has a substrate placement stage on which the substrate to be transferred to the additional process apparatus is placed. The additional process apparatus has an additional process unit configured to perform the additional process on the substrate and a substrate transfer device operable to transfer the substrate between the substrate placement stage of the plating apparatus and the additional process unit. The substrate processing apparatus can perform an additional process in addition to a plating process without lowering a throughput of the apparatus and can upgrade the additional process at a low cost.

Abstract: A plating method is capable of depositing a plated film having excellent in-plane uniformity with respect to a thin seed layer and excellent embeddability with respect to fine damascene structures. The plating method including: positioning an electric resistor between a conductive layer formed on at least a portion of a surface of the substrate and an anode; introducing respectively a plating solution into a space between the conductive layer and the anode on the conductive layer side, and an anode solution into the space between the conductive layer and the anode on the anode side, thereby filling the space with a plating bath composed of the plating solution and the anode solution, the plating solution containing 25 to 75 g/L of copper ions and 0.4 mole/L or more of an organic acid or an inorganic acid, and the anode solution being of the same composition as said plating solution, or containing 0 to 75 g/L of copper ions and 0.

Abstract: An apparatus and a method for processing substrate are generally used for apparatuses for wet-type process of substrate, such as an electrolytic processing apparatus for use in forming interconnects by embedding a metal such as copper (Cu) or the like in fine interconnect patterns (recesses) that are formed in a substrate such as a semiconductor wafer and for use in forming bumps for electrical connections.

Abstract: A method and apparatus are set forth capable of processing a substrate with a high uniformity within the surface area even for a thin feeding layer. The method comprises arranging a counter electrode and the substrate to confront each other; providing a membrane between the counter electrode and the substrate to define a substrate side region and a counter electrode side region. The substrate side region and the counter electrode side region are capable of accommodating respective electrolytes. The substrate side region and the counter electrode side region are supplied with respective electrolytes having different specific resistances. A processing current is also supplied between the substrate and the counter electrode.

Abstract: There is provided an electrolytic solution supply and recovery facility which, in response to an increase in the production amount of an associated electrolytic processing apparatus, can efficiently supply and recover an electrolytic solution while enhancing the productivity and lowering the production cost. An electrolytic solution supply and recovery facility for supplying and recovering an electrolytic solution to and from an electrolytic processing apparatus, includes: a fresh liquid supply section for storing a fresh electrolytic solution, said electrolytic solution having been transferred from a carry-in container that has been carried in from the outside, and for supplying the fresh electrolytic solution to the electrolytic processing apparatus; and a waste liquid recovery section for recovering the electrolytic solution from the electrolytic processing apparatus, storing the electrolytic solution and transferring the electrolytic solution to a carry-out container which is to be carried to the outside.

Abstract: The present invention provides an electrolytic processing apparatus which is capable of increasing the in-plane uniformity of the film thickness of a plated film by making more uniform an electric field distribution over the entire surface to be processed of a substrate even if the substrate has a large area and controlling more uniformly the speed, over the entire surface to be processed of the substrate.