Patents by Inventor Kazuhiko Matsumoto

Kazuhiko Matsumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150014624
    Abstract: This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer 2; one electrode 5A and the other electrode 5B provided to have a nanogap on the first insulating layer 2; a metal nanoparticle or a functional molecule provided between the one electrode 5A and the other electrode 5B; a second insulating layer 8 provided on the first insulating layer 2, and on the one electrode 5A and the other electrode 5B to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.
    Type: Application
    Filed: February 27, 2013
    Publication date: January 15, 2015
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Yutaka Majima, Toshiharu Teranishi, Kazuhiko Matsumoto, Kenzo Maehashi, Yasuo Azuma, Yasuhide Ohno, Kosuke Maeda, Guillaume Hackenberger
  • Publication number: 20150005920
    Abstract: The three-dimensional printing apparatus includes a main unit and movement means that is connected to the main unit, in which the main unit has a printing unit for printing by laminating a target printing object and a stage portion at a printing locus, the movement means moves the three-dimensional printing apparatus over the printing locus with a stage portion that is printed by the printing unit as a stage, and the printing unit prints at least a part of a target printing object at a position to which the three-dimensional printing apparatus is moved.
    Type: Application
    Filed: June 27, 2013
    Publication date: January 1, 2015
    Applicant: pita4 mobile LLC
    Inventor: Kazuhiko Matsumoto
  • Patent number: 8922817
    Abstract: A self-propelled printing apparatus to perform printing on an object to be printed includes a moving unit that moves the self-propelled printing apparatus on the object to be printed and a printing unit that performs printing on the object to be printed on the basis of print processing data generated based on information of a position to which the self-propelled printing apparatus has been moved by the moving unit.
    Type: Grant
    Filed: March 22, 2013
    Date of Patent: December 30, 2014
    Assignee: Pita4 Mobile LLC
    Inventor: Kazuhiko Matsumoto
  • Publication number: 20140285825
    Abstract: A self-propelled printing apparatus to perform printing on an object to be printed includes a moving unit that moves the self-propelled printing apparatus on the object to be printed and a printing unit that performs printing on the object to be printed on the basis of print processing data generated based on information of a position to which the self-propelled printing apparatus has been moved by the moving unit.
    Type: Application
    Filed: March 22, 2013
    Publication date: September 25, 2014
    Applicant: pita4 mobile LLC
    Inventor: Kazuhiko Matsumoto
  • Patent number: 8772099
    Abstract: A method of detecting a detection target using a sensor requires a sensor having a transistor selected from the group of field-effect transistors or single electron transistors. The transistor includes a substrate, a source electrode disposed on the substrate and a drain electrode disposed on the substrate, and a channel forming a current path between the source electrode and the drawing electrode; an interaction-sensing gate comprising a specific substance; and a voltage gate. The method includes (a) providing the detection target on the interaction-sensing gate; (b) setting the gate voltage in the voltage gate at a predetermined level; (c) selectively interacting the specific substance with the detection target; (d) when the detection target interacts with the specific substance, changing a gate voltage in the voltage gate to adjust a characteristic of the transistor; and (e) measuring a change in the characteristic of the transistor to determine a presence of the detection target.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: July 8, 2014
    Assignee: Japan Science and Technology Agency
    Inventors: Kazuhiko Matsumoto, Atsuhiko Kojima, Satoru Nagao, Masanori Katou, Yutaka Yamada, Kazuhiro Nagaike, Yasuo Ifuku, Hiroshi Mitani
  • Patent number: 8766326
    Abstract: A field-effect transistor or a single electron transistor is used as sensors for detecting a detection target such as a biological compound. A substrate has a first side and a second side, the second side being opposed to the first side. A source electrode is disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, and a channel forms a current path between the source electrode and the drain electrode. An interaction-sensing gate is disposed on the second side of the substrate, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target. A gate for applying a gate voltage adjusts a characteristic of the transistor as the detection target changes the characteristic of the transistor when interacting with the specific substance.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: July 1, 2014
    Assignee: Japan Science and Technology Agency
    Inventors: Kazuhiko Matsumoto, Atsuhiko Kojima, Satoru Nagao, Masanori Katou, Yutaka Yamada, Kazuhiro Nagaike, Yasuo Ifuku, Hiroshi Mitani
  • Publication number: 20140170458
    Abstract: A separator (3) of a molten salt battery is impregnated with a molten salt that serves as the electrolyte. The molten salt contains, as cations, at least one kind of ions selected from among quaternary ammonium ions, imidazolium ions, imidazolinium ions, pyridinium ions, pyrrolidinium ions, piperidinium ions, morpholinium ions, phosphonium ions, piperazinium ions and sulfonium ions in addition to sodium ions. These cations do not have adverse effects on a positive electrode (1). In addition, the melting point of the molten salt, which contains sodium ions and the above-mentioned cations, is significantly lower than the operating temperature of sodium-sulfur batteries, said operating temperature being 280-360 DEG C. Consequently, the molten salt battery is capable of operating at lower temperatures than sodium-sulfur batteries.
    Type: Application
    Filed: November 7, 2011
    Publication date: June 19, 2014
    Applicants: KYOTO UNIVERSITY, SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Koji Nitta, Shinji Inazawa, Masatoshi Majima, Atsushi Yamaguchi, Shoichiro Sakai, Atsushi Fukunaga, Rika Hagiwara, Toshiyuki Nohira, Kazuhiko Matsumoto
  • Publication number: 20140127472
    Abstract: A carbon nanowall array (10) is provided with a substrate (1) and carbon nanowalls (2-9). The substrate (1) is composed of silicon, and includes protruding portions (11) and recessed portions (12). The protruding portions (11) and recessed portions (12) are formed in the direction (DR1) on one surface of the substrate (1). The protruding portions (11) and recessed portions (12) are alternately formed in the direction (DR2) perpendicular to the direction (DR1). Each of the protruding portions (11) has a length of 0.1-0.5 ?m in the direction (DR2), and each of the recessed portions (12) has a length of 0.6-1.5 ?m in the direction (DR2). The height of each of the protruding portions (11) is 0.3-0.6 ?m. Respective carbon nanowalls (2-9) are formed in the length direction (i.e., the direction (DR1)) of the protruding portions (11) of the substrate (1), said carbon nanowalls being formed on the protruding portions (11).
    Type: Application
    Filed: June 26, 2012
    Publication date: May 8, 2014
    Applicants: CHUBU UNIVERSITY EDUCATIONAL FOUNDATION, NISSIN ELECTRIC CO., LTD., OSAKA UNIVERSITY, NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
    Inventors: Toshio Kawahara, Kazumasa Okamoto, Kazuhiko Matsumoto, Risa Utsunomiya, Teruaki Matsuba, Hitoshi Matsumoto
  • Patent number: 8703311
    Abstract: [Task] It is an object of the present invention to provide a vehicle battery cooling device even if a situation that cannot be compensated by ordinary cooling means occurs, the efficient cooling is performed and a battery temperature can be stabilized. [Means for Solving] A cooling system of a heat exchanger 18 and a cooling system of a sub radiator 12 are provided to perform the cooling of high-power battery 6. A battery controller 31 which processes the information such as a temperature sensor 33 and so forth switches the device to perform the cooling of high-power battery 6 from the cooling system of heat exchanger 18 to the cooling system of sub radiator 12.
    Type: Grant
    Filed: February 24, 2009
    Date of Patent: April 22, 2014
    Assignee: Calsonic Kansei Corporation
    Inventors: Masaru Sawaguchi, Kenichi Koui, Kazuhiko Matsumoto, Yoshikazu Takamatsu
  • Patent number: 8502277
    Abstract: A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided. It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1A comprises: an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.
    Type: Grant
    Filed: August 27, 2004
    Date of Patent: August 6, 2013
    Assignee: Japan Science and Technology Agency
    Inventors: Kazuhiko Matsumoto, Atsuhiko Kojima, Satoru Nagao, Masanori Katou, Yutaka Yamada, Kazuhiro Nagaike, Yasuo Ifuku, Hiroshi Mitani
  • Publication number: 20120286763
    Abstract: A method of detecting a detection target using a sensor requires a sensor having a transistor selected from the group of field-effect transistors or single electron transistors. The transistor includes a substrate, a source electrode disposed on the substrate and a drain electrode disposed on the substrate, and a channel forming a current path between the source electrode and the drawing electrode; an interaction-sensing gate comprising a specific substance; and a voltage gate. The method includes (a) providing the detection target on the interaction-sensing gate; (b) setting the gate voltage in the voltage gate at a predetermined level; (c) selectively interacting the specific substance with the detection target; (d) when the detection target interacts with the specific substance, changing a gate voltage in the voltage gate to adjust a characteristic of the transistor; and (e) measuring a change in the characteristic of the transistor to determine a presence of the detection target.
    Type: Application
    Filed: July 24, 2012
    Publication date: November 15, 2012
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Kazuhiko MATSUMOTO, Atsuhiko KOJIMA, Satoru NAGAO, Masanori KATOU, Yutaka YAMADA, Kazuhiro NAGAIKE, Yasuo IFUKU, Hiroshi MITANI
  • Publication number: 20120286243
    Abstract: A field-effect transistor or a single electron transistor is used as sensors for detecting a detection target such as a biological compound. A substrate has a first side and a second side, the second side being opposed to the first side. A source electrode is disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, and a channel forms a current path between the source electrode and the drain electrode. An interaction-sensing gate is disposed on the second side of the substrate, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target. A gate for applying a gate voltage adjusts a characteristic of the transistor as the detection target changes the characteristic of the transistor when interacting with the specific substance.
    Type: Application
    Filed: July 24, 2012
    Publication date: November 15, 2012
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Kazuhiko Matsumoto, Atsuhiko Kojima, Satoru Nagao, Masanori Katou, Yutaka Yamada, Kazuhiro Nagaike, Yasuo Ifuku, Hiroshi Mitani
  • Patent number: 8311300
    Abstract: There is provided a medical image processing apparatus matching a plurality of image data. The medical image processing apparatus includes: an image data storage that stores at least two image data of different phases of single target object; a node creating portion that creates nodes, wherein the nodes are related to positions in each of the at least two image data; a local force field calculating portion that calculates local force fields for the nodes, based on positions of the nodes and the at least two image data; a local force calculating portion that calculates local forces, each of which is acted in a corresponding one of the local force fields, from the local force fields; and an image deforming portion that deforms the positions of the nodes based on the local forces.
    Type: Grant
    Filed: May 13, 2009
    Date of Patent: November 13, 2012
    Assignee: Ziosoft, Inc.
    Inventor: Kazuhiko Matsumoto
  • Patent number: 8297351
    Abstract: Subterranean sensing devices configured or designed for downhole use to sense a local condition in the well. The sensing devices comprise one or more transistor having at least one carbon nanotube field effect transistor (CNT FET) configured or designed for operation downhole, within a borehole.
    Type: Grant
    Filed: December 10, 2008
    Date of Patent: October 30, 2012
    Assignee: Schlumberger Technology Corporation
    Inventors: Hidetoshi Yoshiuchi, Tsutomu Yamate, John Ullo, Kazuhiko Matsumoto
  • Patent number: 8261438
    Abstract: The present invention provides a method for forming a metal pattern comprising a step of forming a polymer layer on a substrate; (a2) a step of applying a metal ion or the like to the polymer layer; (a3) a step of forming a conductive layer by reducing the metal ion or the like; (a4) a step of forming a patterned resist layer on the conductive layer; (a5) a step of forming a metal pattern by electroplating in the regions where the resist layer is not formed; (a6) a step of separating the resist layer; (a7) a step of removing the conductive layer from regions protected by the resist layer; and (a8) a step of performing a hydrophobilizing treatment.
    Type: Grant
    Filed: April 10, 2007
    Date of Patent: September 11, 2012
    Assignee: FUJIFILM Corporation
    Inventor: Kazuhiko Matsumoto
  • Patent number: 8257868
    Abstract: A molten salt composition is disclosed containing two or more types of molten salt MTFSI whose anion is an imide anion TFSI and whose cation is an alkali metal M exhibits a lower electrolyte melting point and a wider operating temperature range than a simple salt does. This brings about various advantages such as a wider range of materials that are chosen for use in batteries and the like.
    Type: Grant
    Filed: March 22, 2006
    Date of Patent: September 4, 2012
    Assignee: Kyoto University
    Inventors: Rika Hagiwara, Kazuhiko Matsumoto, Kenichiro Tamaki, Toshiyuki Nohira, Takuya Goto
  • Patent number: 8248241
    Abstract: Detecting whether components are combined and coupled correctly in assembly work is performed by correct and simple operations. The proposed method includes reading a first IC tag attached to a joint part of a first component and a second IC tag attached to a joint part of a second component together in a manner of preventing collision and determining whether the first component and the second component are coupled correctly, based on information representing mating relations of IC tags memorized beforehand.
    Type: Grant
    Filed: December 4, 2008
    Date of Patent: August 21, 2012
    Assignee: Hitachi, Ltd.
    Inventors: Kazuhiko Matsumoto, Toshio Okochi, Kei Suzuki
  • Patent number: 8244010
    Abstract: An image processing device that quickly performs suitable image processing by using an input device to point at an image displayed on the medical image processing device, and makes it possible to readily observe medical images needed for a medical procedure. The medical image processing device includes: an input element by which medical information that includes at least patient information, and the image processing type that uses the medical image data is input; an extraction element for extracting combinations of the medical image data that conform to the patient information and the image processing type; an evaluating unit for evaluating out combinations of medical image data that have the highest possibility of being used; an information reporting unit for reporting of the combinations of medical image data and evaluating result information; and a selection unit for prompting a user to select the combination of medical image data.
    Type: Grant
    Filed: November 14, 2008
    Date of Patent: August 14, 2012
    Inventor: Kazuhiko Matsumoto
  • Patent number: 8223548
    Abstract: A memory device (1) includes at least a first semiconductor region (100) having a length, a first surface, and a cross section surrounded by the first surface, a memory means (300) provided on the first surface, and a gate (400) provided on the memory means (300), and an equivalent sectional radius of the cross section of the first semiconductor region (100) is set to be equal to or smaller than an equivalent silicon oxide film thickness of the memory means (300) to realize low program voltage. The equivalent sectional radius r of the cross section is set to be 10 nm or less and the gate length is set to be 20 nm or less so that multi-level interval converted to gate voltage becomes a specific value which can be identified under the room temperature.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: July 17, 2012
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Yutaka Hayashi, Kazuhiko Matsumoto, Takafumi Kamimura
  • Patent number: 8187664
    Abstract: The invention provides a method of forming a metallic pattern including: (a) forming, in a pattern form on a substrate, a polymer layer which contains a polymer that has a functional group that interacts with an electroless plating catalyst or a precursor thereof; (b) imparting the electroless plating catalyst or precursor thereof onto the polymer layer; and (c) forming a metallic film in the pattern form by subjecting the substrate having the polymer layer to electroless plating using an electroless plating solution, wherein the substrate is treated using a solution comprising a surface charge modifier or 1×10?10 to 1×10?4 mmol/l of a plating catalyst poison before or during the (c) forming of the metallic film. The invention further provides a metallic pattern obtained thereby. Furthermore, the invention provides a printed wiring board and a TFT wiring board, each of which uses the metallic pattern as a conductive layer.
    Type: Grant
    Filed: February 8, 2006
    Date of Patent: May 29, 2012
    Assignee: FUJIFILM Corporation
    Inventors: Kazuhiko Matsumoto, Koichi Kawamura, Takeyoshi Kano