Abstract: A solid oxide fuel cell includes an electrolyte layer (101) made of a sintered product of a metal oxide powder, a fuel electrode (102) formed on one surface of the electrolyte layer (101), and an air electrode (103) formed on the other surface of the electrolyte layer (101) and including an active layer (131) and collector layer (132). The active layer (131) is made of a sintered product of a powder mixture obtained by mixing a powder of a perovskite oxide such as LaNi0.6Fe0.4O3 (LNF) having an average particle size of 0.5 ?m, and a powder of another perovskite oxide such as LNF having an average particle size of 1.3 ?m. The collector layer (132) is made of a sintered product of a powder of a perovskite oxide such as LNF having an average particle size of 1.3 ?m.

Abstract: A semiconductor device comprising: a semiconductor element (10) having a plurality of electrodes (12); an interconnect pattern (20) electrically connected to the electrodes (12); a plurality of laminated insulating layers (41, 42 and 43); and a plurality of external terminals (30) electrically connected to the interconnect pattern (20). A plurality of holes (44, 46, and 48) are respectively formed in the insulating layers (41, 42, and 43) to form an opening portion (40) communicating from the hole (48) in the highest insulating layer (43) to the hole (44) in the lowest insulating layer (41). An external terminal (30) is provided within the opening portion (40), and the second hole (46) formed in the higher positioned second insulating layer (42) is larger than the first hole (44) formed in the lower positioned first insulating layer (41).

Abstract: A semiconductor device and method of manufacturing the same, a circuit board and an electronic instrument are such that without substrate material selection or additional steps after connection, connection reliability can be assured, while direct connection to a substrate is possible, further allowing an electronic instrument to be made more compact and lightweight. The semiconductor device comprises a semiconductor chip (100) having electrodes (104), an interconnect layer (120) connected to the electrodes (104), a conducting layer (122) provided on the interconnect layer (120) avoiding the area of the electrodes (104), an underlying metal flyer (124) having a size larger than the peripheral outline of the conducting layer (122) provided on the conducting layer (122) and easier to be deformed than the conducting layer (122), bumps (200) provided on the underlying metal layer (124), and a resin layer (126) provided on the periphery of the conducting layer (122).

Abstract: A semiconductor device and method of manufacturing the same, a circuit board and an electronic instrument are such that without substrate material selection or additional steps after connection, connection reliability can be assured, while direct connection to a substrate is possible, further allowing an electronic instrument to be made more compact and lightweight. The semiconductor device comprises a semiconductor chip (100) having electrodes (104), an interconnect layer (120) connected to the electrodes (104), a conducting layer (122) provided on the interconnect layer (120) avoiding the area of the electrodes (104), an underlying metal layer (124) having a size larger than the peripheral outline of the conducting layer (122) provided on the conducting layer (122) and easier to be deformed than the conducting layer (122), bumps (200) provided on the underlying metal layer (124), and a resin layer (126) provided on the periphery of the conducting layer (122).

Abstract: A semiconductor device and method of manufacturing the same, a circuit board and an electronic instrument are such that without substrate material selection or additional steps after connection, connection reliability can be assured, while direct connection to a substrate is possible, further allowing an electronic instrument to be made more compact and lightweight. The semiconductor device comprises a semiconductor chip (100) having electrodes (104), an interconnect layer (120) connected to the electrodes (104), a conducting layer (122) provided on the interconnect layer (120) avoiding the area of the electrodes (104), an underlying metal layer (124) having a size larger than the peripheral outline of the conducting layer (122) provided on the conducting layer (122) and easier to be deformed than the conducting layer (122), bumps (200) provided on the underlying metal layer (124), and a resin layer (126) provided on the periphery of the conducting layer (122).