Abstract: An object of the present invention to provide a resistor element which can be mounted at a higher density and can cope with a wide range of resistance values, the present invention provides a resistor element including a resistor which mainly contains metal fibers, electrodes which are formed at an end portion of the resistor, and an insulating layer which is in contact with the resistor and the electrodes.

Abstract: An electric power transmission device capable of efficiently performing contactless electric power transmission to an underwater vehicle in water is provided. The electric power transmission device, which is an electric power transmission device transmitting electric power to an electric power reception device including an electric power reception coil in water, includes one or more transmission coils including an electric power transmission coil which transmits electric power to an electric power reception coil via a magnetic field, an electric power transmission unit which transmits AC power to an electric power transmission coil, a capacitor which is connected to the transmission coil and forms a resonant circuit which resonates with the transmission coil, and a buoyant body connected to at least one of the transmission coils.

Abstract: A power transmission device transmits power underwater to a power reception device including a power reception coil. The power transmission device includes: a power transmission coil that transmits power to the power reception coil through a magnetic field; a power transmitter that transmits an alternating current power having a predetermined frequency to the power transmission coil; and a first capacitor that is connected to the power transmission coil and forms a resonance circuit resonating with the power transmission coil. The predetermined frequency is a frequency between a first frequency at which a geometric mean value of a Q value of the power transmission coil and a Q value of the power reception coil are the maximum and a second frequency at which the Q value of the power transmission coil and the Q value of the power reception coil are the same.

Abstract: An imaging apparatus of the disclosure includes a base that has a power transmitter for transmitting power wirelessly; and a movable unit that has a power receiver for receiving power wirelessly from the power transmitter, an imager operating on the basis of power received by the power receiver, and a first communicator transmitting image information acquired by the imager wirelessly. The movable unit is movable relative to the base. According to the disclosure, it is possible to improve reliability of transmission and reception of a signal and power, and it is possible to alleviate deficiency due to limitation on the number of operation times caused by a mechanical contact.

Abstract: An imaging apparatus of the disclosure includes a base that has a power transmitter for transmitting power wirelessly; and a movable unit that has a power receiver for receiving power wirelessly from the power transmitter, an imager operating on the basis of power received by the power receiver, and a first communicator transmitting image information acquired by the imager wirelessly. The movable unit is movable relative to the base. According to the disclosure, it is possible to improve reliability of transmission and reception of a signal and power, and it is possible to alleviate deficiency due to limitation on the number of operation times caused by a mechanical contact.

Abstract: A power transmission device is configured to transmit power underwater to an underwater vehicle having a power reception coil. The power transmission device includes a power transmission coil configured to transmit power to the power reception coil through a magnetic field, a power transmission unit configured to transmit an alternating current voltage having a frequency a 10 kHz or lower to the power transmission coil, and a first capacitor connected to the power transmission coil and configured to form a resonance circuit resonating at the frequency with the power transmission coil.

Abstract: The operation unit of radiation monitoring equipment reads in a real countable number (this time) and a cumulated countable number (previous time) in a every operational cycle, and judges whether the real countable number (this time) is within a permissible range, if the real countable number (this time) is judged to be within the permissible range, it is judged whether a number of times deviated from the permissible range is equal to zero or not, if the number of times deviated from the permissible range is judged to be equal to zero, a regular processing is performed, if the real countable number (this time) is judged to be out of a permissible range, 1 is added to the number of times deviated from the permissible range and further it is judged whether the added number of times deviated from the permissible range is equal to 1 or not.

Abstract: In a radiation measurement device in which respective wave height values of voltage pulses from a radiation detector are made to correspond to radiation energy values and a count that is the number of the voltage pulses is separately generated for each of a plurality of channels corresponding to the wave height values so that a wave height spectrum is generated and a dose of a radiation that has entered the radiation detector is calculated based on the wave height spectrum, based on a count in at least one channel, out of the plurality of channels, that includes a lower limit within a measurement range for the radiation energy value, a dose is corrected by calculating a portion thereof neglected as what is the same as or smaller than a measurement limit, so that a dose of a radiation that has entered the radiation detector is calculated.

Abstract: An imaging apparatus of the disclosure includes a base that has a power transmitter for transmitting power wirelessly; and a movable unit that has a power receiver for receiving power wirelessly from the power transmitter, an imager operating on the basis of power received by the power receiver, and a first communicator transmitting image information acquired by the imager wirelessly. The movable unit is movable relative to the base. According to the disclosure, it is possible to improve reliability of transmission and reception of a signal and power, and it is possible to alleviate deficiency due to limitation on the number of operation times caused by a mechanical contact.

Abstract: A radiation monitor includes a high-energy count-rate-measurement functional unit, a low-energy count-rate-measurement functional unit, and an alert-diagnosis functional unit. The alert-diagnosis functional unit receives an alert from the high-energy count-rate-measurement functional unit, receives a low-energy count rate from the low-energy count-rate-measurement functional unit, determines whether or not the low-energy count rate is in a set acceptable range by performing synchronizing with alert transmission, determines that the alert is caused by fluctuation, when the low-energy count rate is in the acceptable range, determines that the alert is caused by any of an increase in the ? ray which is a measurement target or enter of noise, when the low-energy count rate is increased beyond the acceptable range, and outputs results of determination.

Abstract: A radiation monitor includes a high-energy count-rate-measurement functional unit, a low-energy count-rate-measurement functional unit, and an alert-diagnosis functional unit. The alert-diagnosis functional unit receives an alert from the high-energy count-rate-measurement functional unit, receives a low-energy count rate from the low-energy count-rate-measurement functional unit, determines whether or not the low-energy count rate is in a set acceptable range by performing synchronizing with alert transmission, determines that the alert is caused by fluctuation, when the low-energy count rate is in the acceptable range, determines that the alert is caused by any of an increase in the ? ray which is a measurement target or enter of noise, when the low-energy count rate is increased beyond the acceptable range, and outputs results of determination.

Abstract: In a radiation measurement device in which respective wave height values of voltage pulses from a radiation detector are made to correspond to radiation energy values and a count that is the number of the voltage pulses is separately generated for each of a plurality of channels corresponding to the wave height values so that a wave height spectrum is generated and a dose of a radiation that has entered the radiation detector is calculated based on the wave height spectrum, based on a count in at least one channel, out of the plurality of channels, that includes a lower limit within a measurement range for the radiation energy value, a dose is corrected by calculating a portion thereof neglected as what is the same as or smaller than a measurement limit, so that a dose of a radiation that has entered the radiation detector is calculated.

Abstract: Provided is a contactless electric power feeding system that allows a plurality of devices to be recharged at the same time. A feeding device includes a primary feeding coil and each receiving device includes a secondary receiving coil. Each coil forms a resonance circuit jointly with a capacitor, and the two resonance circuits are electro-magnetically coupled with each other to from a transmission circuit unit. A first impedance of an input end of the transmission circuit unit is matched with a second impedance of an output end of the transmission circuit unit by using a coupling efficient between the primary feeding coil and the secondary receiving coil, and the output impedance of a power supply unit for supplying electric power to the primary feeding coil is smaller than the first impedance.

Abstract: A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO2, or a mixture of a tetravalent metal oxide and SiON and which containing B when it is in an nMOS structure on the semiconductor substrate or containing at least one of P and As when it is in a pMOS structure on the semiconductor substrate, and a gate electrode made of a metal having a work function of 4 eV to 5.5 eV.

Abstract: A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

Abstract: A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.

Abstract: A semiconductor device manufacturing method comprises: forming a gate insulative film on a semiconductor substrate by: forming a first nitride film on the substrate; forming a first oxide film and a second oxide film, the first oxide film being between the substrate and the first nitride film, the second oxide film being on the first nitride film; and nitriding the second oxide film to form, on the first nitride film, one of either: a second nitride film or an SiON film; and forming a gate electrode on the gate insulative film; wherein the equivalent oxide thickness of the gate insulative film is equal to or less than 1 nm.

Abstract: A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.

Abstract: A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO2, or a mixture of a tetravalent metal oxide and SiON and which containing B when it is in an nMOS structure on the semiconductor substrate or containing at least one of P and As when it is in a pMOS structure on the semiconductor substrate, and a gate electrode made of a metal having a work function of 4 eV to 5.5 eV.

Abstract: A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO2, or a mixture of a tetravalent metal oxide and SiON and which containing B when it is in an nMOS structure on the semiconductor substrate or containing at least one of P and As when it is in a pMOS structure on the semiconductor substrate, and a gate electrode made of a metal having a work function of 4 eV to 5.5 eV.