Abstract: [Problem] An object of the present invention is to provide a sealant composition for a nonaqueous electrolyte cell in which the application position and uniformity of applied film thickness of the sealant can be visually confirmed even when being applied as a thin film, and having excellent durability in relation to various electrolytic solutions used in the cell. [Solution] A sealant composition for a nonaqueous electrolyte cell, containing (A) an elastomer and (B) a cobalt blue colorant, in which the component (B) has a content of 0.1-20 mass parts with respect to 100 mass parts of the component (A).

Abstract: [Problem] An object of the present invention is to provide a sealant composition for a nonaqueous electrolyte cell in which the application position and uniformity of applied film thickness of the sealant can be visually confirmed even when being applied as a thin film, and having excellent durability in relation to various electrolytic solutions used in the cell. [Solution] A sealant composition for a nonaqueous electrolyte cell, containing (A) an elastomer and (B) a cobalt blue colorant, in which the component (B) has a content of 0.1-20 mass parts with respect to 100 mass parts of the component (A).

Abstract: To accurately measure power source noise generated inside an integrated circuit, the power source noise measuring device comprises: a mutual inductor pair placed inside an integrated circuit, the mutual inductor pair including (i) a first inductor connected to between power source voltages of the integrated circuit and (ii) a second inductor arranged opposite the first inductor, the both ends of which second inductor are connected to external output terminals; and a power source noise measuring unit which measures power source noise of the integrated circuit on the basis of a voltage waveform output from the second inductor of said mutual inductor pair via the external output terminals.

Abstract: To accurately measure power source noise generated inside an integrated circuit, the power source noise measuring device comprises: a mutual inductor pair placed inside an integrated circuit, the mutual inductor pair including (i) a first inductor connected to between power source voltages of the integrated circuit and (ii) a second inductor arranged opposite the first inductor, the both ends of which second inductor are connected to external output terminals; and a power source noise measuring unit which measures power source noise of the integrated circuit on the basis of a voltage waveform output from the second inductor of said mutual inductor pair via the external output terminals.

Abstract: To accurately measure power source noise generated inside an integrated circuit, the power source noise measuring device comprises: a mutual inductor pair placed inside an integrated circuit, the mutual inductor pair including (i) a first inductor connected to between power source voltages of the integrated circuit and (ii) a second inductor arranged opposite the first inductor, the both ends of which second inductor are connected to external output terminals; and a power source noise measuring unit which measures power source noise of the integrated circuit on the basis of a voltage waveform output from the second inductor of said mutual inductor pair via the external output terminals.

Abstract: To accurately measure power source noise generated inside an integrated circuit, the power source noise measuring device comprises: a mutual inductor pair placed inside an integrated circuit, the mutual inductor pair including (i) a first inductor connected to between power source voltages of the integrated circuit and (ii) a second inductor arranged opposite the first inductor, the both ends of which second inductor are connected to external output terminals; and a power source noise measuring unit which measures power source noise of the integrated circuit on the basis of a voltage waveform output from the second inductor of said mutual inductor pair via the external output terminals.

Abstract: An insulated gate type semiconductor device comprised of a semiconductor layer serving as an active region isolated from a semiconductor substrate by a substrate isolation insulating film and a T-shaped gate electrode comprised of a trunk-shaped main gate electrode and a crosspiece-shaped conductor pattern provided on the semiconductor layer, wherein the thickness of the gate insulating film directly under the crosspiece-shaped conductor pattern is made greater than the thickness of the gate insulating film directly under the main gate electrode, whereby it is possible to prevent short-circuits between electrodes, prevent short-circuits between separators, and prevent an increase of the parasitic capacitance.