Abstract: An IF filter band-limits an intermediate frequency signal outputted from a mixer. An AFC unit controls the oscillation frequency of a PLL so that the frequency of the intermediate frequency signal is a predetermined frequency. When the AFC unit controls the oscillation frequency of the PLL, a band control unit controls the passing characteristic of the IF filter to the passing characteristic of a wide band, and after the completion of the control, controls the passing characteristic of the IF filter to the passing characteristic of a narrow band. A frequency correction unit refers to a filter information storage unit, and corrects the oscillation frequency controlled by the AFC unit according to the difference between the center frequency of the passband of the passing characteristic of the wide band and the center frequency of the passband of the passing characteristic of the narrow band.

Abstract: An IF filter band-limits an intermediate frequency signal outputted from a mixer. An AFC unit controls the oscillation frequency of a PLL so that the frequency of the intermediate frequency signal is a predetermined frequency. When the AFC unit controls the oscillation frequency of the PLL, a band control unit controls the passing characteristic of the IF filter to the passing characteristic of a wide band, and after the completion of the control, controls the passing characteristic of the IF filter to the passing characteristic of a narrow band. A frequency correction unit refers to a filter information storage unit, and corrects the oscillation frequency controlled by the AFC unit according to the difference between the center frequency of the passband of the passing characteristic of the wide band and the center frequency of the passband of the passing characteristic of the narrow band.

Abstract: According to one embodiment, a radio communication device 1 includes a variable frequency divider 17 that divides a frequency of a reference clock REFCLK and outputs a frequency divided clock DCLK; a controller 15 that controls a frequency dividing ratio of the variable frequency divider 17 so that an integral multiple of a frequency of the frequency divided clock DCLK is not included in a frequency band of a high-frequency signal that has been received from outside by radio; and a DCDC converter 18 that performs a switching operation in synchronization with the frequency divided clock DCLK to generate an output voltage Vout obtained by stepping down an input voltage Vin.

Abstract: According to one embodiment, a radio communication device 1 includes a variable frequency divider 17 that divides a frequency of a reference clock REFCLK and outputs a frequency divided clock DCLK; a controller 15 that controls a frequency dividing ratio of the variable frequency divider 17 so that an integral multiple of a frequency of the frequency divided clock DCLK is not included in a frequency band of a high-frequency signal that has been received from outside by radio; and a DCDC converter 18 that performs a switching operation in synchronization with the frequency divided clock DCLK to generate an output voltage Vout obtained by stepping down an input voltage Vin.

Abstract: According to one embodiment, a radio communication device 1 includes a variable frequency divider 17 that divides a frequency of a reference clock REFCLK and outputs a frequency divided clock DCLK; a controller 15 that controls a frequency dividing ratio of the variable frequency divider 17 so that an integral multiple of a frequency of the frequency divided clock DCLK is not included in a frequency band of a high-frequency signal that has been received from outside by radio; and a DCDC converter 18 that performs a switching operation in synchronization with the frequency divided clock DCLK to generate an output voltage Vout obtained by stepping down an input voltage Vin.

Abstract: According to one embodiment, a radio communication device 1 includes a variable frequency divider 17 that divides a frequency of a reference clock REFCLK and outputs a frequency divided clock DCLK; a controller 15 that controls a frequency dividing ratio of the variable frequency divider 17 so that an integral multiple of a frequency of the frequency divided clock DCLK is not included in a frequency band of a high-frequency signal that has been received from outside by radio; and a DCDC converter 18 that performs a switching operation in synchronization with the frequency divided clock DCLK to generate an output voltage Vout obtained by stepping down an input voltage Vin.

Abstract: An object is to avoid a deadlock in a PLL. A PLL synthesizer includes a PLL circuit that includes a voltage control oscillation circuit configured to control an oscillation frequency according to a control voltage, an oscillation frequency storage unit configured to previously store the oscillation frequency at a first temperature, a control voltage setting unit configured to set a control voltage based on a difference between the oscillation frequency at a second temperature and the stored oscillation frequency, and a calibration processing unit configured to calibrate the voltage control oscillation circuit in a state in which the control voltage is set so that the oscillation frequency will become a predetermined frequency.

Abstract: A semiconductor device comprises a semiconductor substrate that is provided with an integrated circuit; a multi-layered member that is installed in the semiconductor substrate, including a plurality of conductive members and an insulation member; and an external terminal formed on a part of the surface of the multi-layered member. A pair of the conductive members contacts with the upper surface and the lower surface of the insulation member directly under the external terminal, includes a portion where the conductive members are overlapped each other, and are electrically coupled to each other.

Abstract: The present invention provides a method and apparatus for forming a zinc oxide thin film with high transparency and high conductivity on a surface of a flexible substrate such as plastic without the indispensable requirement of doping impurities. In the method of forming a zinc oxide thin film by reacting oxygen radicals and zinc atoms on a surface of a substrate placed in a film-forming chamber evacuated to a vacuum, the density of crystal defects that are defects of the atomic arrangement of the zinc oxide thin film is controlled by the temperature of the substrate, and the zinc oxide thin film is thereby formed. It is suitable to form the film while maintaining the temperature of the substrate at 400° C. or less to intentionally disturb the regularity of the atomic arrangement of the zinc oxide thin film.

Abstract: A semiconductor wafer examination method that includes: preparing a wafer formed with a chip area for use as a semiconductor chip; firstly examining the wafer by probing; pressing an electrode of the wafer with a pressure member having a flat surface; and secondly examining the wafer by probing.

Abstract: A semiconductor wafer examination method that includes: preparing a wafer formed with a chip area for use as a semiconductor chip; firstly examining the wafer by probing; pressing an electrode of the wafer with a pressure member having a flat surface; and secondly examining the wafer by probing.

Abstract: A semiconductor device comprises a semiconductor substrate that is provided with an integrated circuit; a multi-layered member that is installed in the semiconductor substrate, including a plurality of conductive members and an insulation member; and an external terminal formed on a part of the surface of the multi-layered member. A pair of the conductive members contacts with the upper surface and the lower surface of the insulation member directly under the external terminal, includes a portion where the conductive members are overlapped each other, and are electrically coupled to each other.

Abstract: A semiconductor wafer examination method that includes: preparing a wafer formed with a chip area for use as a semiconductor chip; firstly examining the wafer by probing; pressing an electrode of the wafer with a pressure member having a flat surface; and secondly examining the wafer by probing.

Abstract: A semiconductor wafer examination method that includes: preparing a wafer formed with a chip area for use as a semiconductor chip; firstly examining the wafer by probing; pressing an electrode of the wafer with a pressure member having a flat surface; and secondly examining the wafer by probing.

Abstract: A semiconductor wafer examination method that includes: preparing a wafer formed with a chip area for use as a semiconductor chip; firstly examining the wafer by probing; pressing an electrode of the wafer with a pressure member having a flat surface; and secondly examining the wafer by probing.

Abstract: A semiconductor wafer examination method that includes: preparing a wafer formed with a chip area for use as a semiconductor chip; firstly examining the wafer by probing; pressing an electrode of the wafer with a pressure member having a flat surface; and secondly examining the wafer by probing.

Abstract: A semiconductor wafer examination method that includes: preparing a wafer formed with a chip area for use as a semiconductor chip; firstly examining the wafer by probing; pressing an electrode of the wafer with a pressure member having a flat surface; and secondly examining the wafer by probing.

Abstract: The present invention provides a method and apparatus for forming a zinc oxide thin film with high transparency and high conductivity on a surface of a flexible substrate such as plastic without the indispensable requirement of doping impurities. In the method of forming a zinc oxide thin film by reacting oxygen radicals and zinc atoms on a surface of a substrate placed in a film-forming chamber evacuated to a vacuum, the density of crystal defects that are defects of the atomic arrangement of the zinc oxide thin film is controlled by the temperature of the substrate, and the zinc oxide thin film is thereby formed. It is suitable to form the film while maintaining the temperature of the substrate at 400° C. or less to intentionally disturb the regularity of the atomic arrangement of the zinc oxide thin film.

Abstract: A method of manufacturing a semiconductor device includes: (a) preparing a semiconductor chip having a plurality of electrodes; (b) preparing a substrate having a plurality of electrical connection portions; (c) holding the semiconductor chip by a holding tool; (d) planarizing an upper surface of the electrode of the semiconductor chip held by the holding tool; and (e) electrically connecting, after the step (d), the electrode of the semiconductor chip and the electrical connection portion of the substrate.

Abstract: A semiconductor wafer examination method that includes: preparing a wafer formed with a chip area for use as a semiconductor chip; firstly examining the wafer by probing; pressing an electrode of the wafer with a pressure member having a flat surface; and secondly examining the wafer by probing.