Abstract: Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate.

Abstract: A heat-resistant component for a chemical processing apparatus is formed from a ferritic Cr-steel that contains Cr in an amount of from 13% by weight to 30% by mass. The ferritic Cr-steel has a creep rate of 1×10?51h or less at 700° C. under stress of 100 MPa, and an oxidation weight gain of 10 mg/cm2 or less after being maintained in a 650° C. water vapor for 1,000 h. The heat-resistant component for a chemical processing apparatus is produced by hot working the ferritic Cr-steel in a temperature range of 850 to 1,200° C., forming the ferritic Cr-steel into a component shape, subjecting the steel to an annealing treatment in a temperature range of 1,000 to 1,250° C., and cooling the steel to 400° C. or less at a cooling rate of 100° C./min or higher.

Abstract: A ferritic Cr-steel for a heat-resistant precision component contains Cr in an amount of from 13% by mass to 30% by mass, and has a thermal expansion coefficient of 15×10?6 or less in a temperature range of from room temperature to 800° C., and a minimum creep rate of 1×10?4/h or less at 700° C. under stress of 100 MPa. The ferritic Cr-steel for a heat-resistant precision component is produced by hot working a ferritic Cr-steel in a temperature range of 850 to 1,200° C., forming the ferritic Cr-steel into a predetermined shape, subjecting the steel to an annealing treatment in a temperature range of 1,000 to 1,250° C., and cooling the steel to 400° C. or less at a cooling rate of 100° C./min or higher. The production of the ferritic Cr-steel realizes a heat-resistant precision component, such as the rotor, disc, and blade of a turbine, that can withstand use under high temperatures above 600° C.

Abstract: An exhaust system is provided for exhausting an exhaust gas used for sterilizing an item to be sterilized by using a high concentration NO2 gas, including an ozone generator, a gas treatment means for adsorbing ozone generated by the ozone generator and NO2 in the exhaust gas and accelerating generation of dinitrogen pentoxide or nitric acid by a reaction of the ozone and NO2 to retain the resultant, and an exhaust apparatus for exhausting the exhaust gas. The exhaust system can effectively and ably purify a high concentration NO2 exhaust gas having a concentration beyond the normal level.

Abstract: A machine translation apparatus includes a identification information detection unit that detects information identifiable to a designated object; a receiving unit that receives a source language sentence; a word dividing unit that divides the source language sentence into a plurality of first word by morphological analysis; a deixis detection unit that detects, from the divided word, a deixis indicating the object directly; a correspondence setting unit that sets the identification information of the designated object and the deixis in correspondence with each other; a semantic class determining unit that determines the semantic class indicating a semantic attribute of the designated objectbased on the identification information of the designated object corresponding to the deixis; and a translation unit that translates the source language sentence where the deixis is attached the attribute having the semantic class of the designated object.

Abstract: By focusing on the fact that nitrogen dioxide exhibits an increased sterilizing effect among other sterilant gases including nitrogen oxide, the present invention is made to provide a sterilization method which may be suitably used for sterilizing items to be sterilized such as medical instruments which require increased reliability by using a high concentration NO2 gas of 5,000 ppm or above, for example. An inside of a sterilizing chamber containing an item to be sterilized is humidified, and a concentration of NO2 in the sterilizing chamber is made to be from 9 to 100 mg/L by filling a high concentration NO2 gas.

Abstract: Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate.

Abstract: A tube spacer S formed by bending a wire, includes a plurality of projections 20 and a base-bending portion 21. Each of the projections 20 is inserted between tubes, and has a pair of extending portions 201 extend in X direction and a front-bending portion 202 for connecting both front ends of the pair of extending portions 201. The base-bending portion 21 connects both rear ends of the projections 20 so that the projections 20 are arranged at interval in Z direction. With this structure, manufacturing cost for the tube spacer S can be low, and the tubes can be stably supported.

Abstract: Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate.

Abstract: A filtering integrated circuit comprises: a storing circuit; a filter coefficient calculating unit configured to receive frequency information that identifies a characteristic frequency of an output signal in a filtering process, and to set filter coefficients calculated based on the frequency information in the storing circuit; and a filtering unit configured to output the output signal after applying a filtering process to an inputted signal based on the filter coefficients set in the storing circuit.

Abstract: Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate.

Abstract: Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate.

Abstract: A heating apparatus 1 includes a shell 2, a primary heat exchanger (sensible heat exchanger) 3, a burner (combustion means) 5, and a fan 6. A secondary heat exchanger (latent heat exchanger) 7 has a plurality of heat receiving tubes 18 arranged in parallel between a pair of headers 16 and 17, the heat receiving tubes 18 being fixed to tube plates 20. The heat receiving tubes 18 are bare tubes without fins and are arranged across flow of combustion gas. The number of the tubes 18 arranged vertically is less than the number of the tubes 18 arranged horizontally.

Abstract: Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate.

Abstract: A secondary heat exchanger B for recovering latent heat from combustion gas includes water tubes 5 each of which is so inclined that a first end 50a is positioned lower than a second end 50b. Therefore, in draining water from each of the water tubes 5, water can be caused to flow smoothly into a water-inflow and hot-water-outflow header 6A connected to the first ends 50a. The secondary heat exchanger B includes a casing 7 which includes an upper wall 70a and a bottom wall 70b which are so inclined that the inner surfaces thereof extend generally in parallel with the water tubes 5, and the upper and the lower gaps 79a and 79b have constant widths s2 and s3. Therefore, the amount of heat recovery from the combustion gas passing through the gaps 79a and 79b can be increased.

Abstract: A high temperature bolt material, characterized in that it is a ferrite steel comprising 8 wt % or more of Cr and having a tempered martensite structure and can be used in a high temperature region of higher than 500° C.; and a method for producing the high temperature bolt material which comprises subjecting the above-mentioned steel material to a heat treatment comprising a quenching or normalizing at a temperature of 1000° C. or higher and then to a tempering at a temperature of 730° C. or higher. The above ferrite steel high temperature bolt material is excellent in characteristics of the resistance to stress relaxation.

Abstract: A tube spacer S formed by bending a wire, includes a plurality of projections 20 and a base-bending portion 21. Each of the projections 20 is inserted between tubes, and has a pair of extending portions 201 extend in X direction and a front-bending portion 202 for connecting both front ends of the pair of extending portions 201. The base-bending portion 21 connects both rear ends of the projections 20 so that the projections 20 are arranged at interval in Z direction. With this structure, manufacturing cost for the tube spacer S can be low, and the tubes can be stably supported.

Abstract: A heating apparatus 1 includes a shell 2, a primary heat exchanger (sensible heat exchanger)3, a burner (combustion means) 5, and a fan 6. A secondary heat exchanger (latent heat exchanger) 7 has a plurality of heat receiving tubes 18 arranged in parallel between a pair of headers 16 and 17, the heat receiving tubes 18 being fixed to tube plates 20. The heat receiving tubes 18 are bare tubes without fins and are arranged across flow of combustion gas. The number of the tubes 18 arranged vertically is less than the number of the tubes 18 arranged horizontally.

Abstract: A filtering integrated circuit comprises: a storing circuit; a filter coefficient calculating unit configured to receive frequency information that identifies a characteristic frequency of an output signal in a filtering process, and to set filter coefficients calculated based on the frequency information in the storing circuit; and a filtering unit configured to output the output signal after applying a filtering process to an inputted signal based on the filter coefficients set in the storing circuit.

Abstract: A secondary heat exchanger B for recovering latent heat from combustion gas includes water tubes 5 each of which is so inclined that a first end 50a is positioned lower than a second end 50b. Therefore, in draining water from each of the water tubes 5, water can be caused to flow smoothly into a water-inflow and hot-water-outflow header 6A connected to the first ends 50a. The secondary heat exchanger B includes a casing 7 which includes an upper wall 70a and a bottom wall 70b which are so inclined that the inner surfaces thereof extend generally in parallel with the water tubes 5, and the upper and the lower gaps 79a and 79b have constant widths s2 and s3. Therefore, the amount of heat recovery from the combustion gas passing through the gaps 79a and 79b can be increased.