Abstract: A medicine includes glycopyrronium salicylate or a solvate thereof, wherein the medicine is used for treating or preventing sialorrhea and the like. A therapeutic drug enables the treatment of sialorrhea by affixing and a novel salt of glycopyrronium is suitable for a transdermal absorptive preparation.

Abstract: A photoelectric conversion apparatus includes a photodiode, a generation circuit, a first control circuit, and a second control circuit. The photodiode is configured to perform avalanche multiplication. The generation circuit is configured to generate a control signal. The first control circuit is configured to be controlled by the control signal to be in a standby state where the avalanche multiplication by the photodiode is possible and in a recharging state for returning the photodiode having performed the avalanche multiplication to the standby state. The second control circuit is configured to count a number of periods in which the avalanche multiplication has occurred among a plurality of periods of the standby state by using the control signal and a signal corresponding to an output of the photodiode.

Abstract: An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.

Abstract: A device includes a first substrate including a first layer including a first surface and a second surface, and a first wiring structure located on the first layer. The device includes an avalanche photodiode located on the first layer, and a resistive element connected to the avalanche photodiode. The first wiring structure includes a wire to supply a first voltage to the avalanche photodiode. A distance between the resistive element and the first surface of the first layer is greater than a distance between the wire and the first surface of the first layer.

Abstract: A photoelectric conversion device includes a pixel isolation portion and a concavo-convex structure. The pixel isolation portion is arranged between adjacent pixels in a plurality of pixels formed in a semiconductor layer. The concavo-convex structure is formed on a light receiving surface of the semiconductor layer. The concavo-convex structure includes a trench extending toward an oblique direction from the light receiving surface to an inside of the semiconductor layer. The trench is filled with material that is different from material of the semiconductor layer positioned around the trench.

Abstract: An apparatus includes a first substrate having a plurality of avalanche diodes, a second substrate having a plurality of pixel circuits, and a third substrate having a signal processing circuit. The second substrate and the third substrate are stacked in such a manner that a third wiring structure is provided between two semiconductor layers of the second substrate and the third substrate. The apparatus includes first through-hole wiring going through the semiconductor layer of the third substrate.

Abstract: A photoelectric conversion apparatus includes an avalanche photodiode including an anode and a cathode, a switch that is connected to one node of the anode and the cathode, and a power line to which a drive voltage is to be applied, and configured to switch a resistance value between the one node and the power line, and a signal generation unit configured to generate a pulse signal for controlling switching of the switch, wherein a value obtained by dividing the number of the pulse signals in a first exposure period by the first exposure period, and a value obtained by dividing the number of the pulse signals in a second exposure period having a length different from a length of the first exposure period, by the second exposure period are different.

Abstract: An apparatus includes a photodiode including an anode and a cathode, a switch connected to a node of one of the anode and the cathode and to a power supply line via which a driving voltage is supplied, and functioning to switch a resistance value between the node and the power supply line, and a generation unit configured to generate a pulse signal for controlling switching of the switch. The apparatus is operable in one of two modes including a first mode and a second mode, the second mode being usable in a lower luminance condition than a luminance condition in the first mode. In an exposure period for acquiring one frame of signals, the number of pulse signals in the second mode is smaller than in the first mode.

Abstract: A processing apparatus includes a first storage unit for storing first array data that is based on output values of a plurality of pixels arranged in an array, a second storage unit having second array data stored therein to be used for correction of the output values from the plurality of pixels, and a correction unit including a calculation unit that corrects an output value of at least one pixel of the plurality of pixels based on the first array data and the second array data.

Abstract: A photoelectric conversion device includes a photoelectric conversion unit, a light value holding unit that holds light values based on signal charges generated during a first exposure period and a second exposure period having at least one of start timing and end timing different from that of the first exposure period, a comparison unit that compares the light value based on the signal charge generated during the first exposure period with the light value based on the signal charge generated during the second exposure period, and a control unit that sets a third exposure period and a fourth exposure period having at least one of the start timing and end timing different from that of the third exposure period on the basis of a comparison result of the comparison unit. The third and fourth exposure periods are less than at least one of the first and second exposure periods.

Abstract: A photoelectric conversion device includes a connecting portion that electrically connects a contact plug of anode wiring and the second semiconductor region of the isolation portion. The connecting portion includes a third semiconductor region of the second conducting type that is connected to the contact plug of the anode wiring, and a fourth semiconductor region of the second conducting type that is disposed between the third semiconductor region and the second semiconductor region. The impurity concentration of the third semiconductor region is higher than the impurity concentration of the second semiconductor region and the impurity concentration of the fourth semiconductor region is lower than the impurity concentration of the third semiconductor region. With respect to a direction in which the APDs are arrayed, the width of the isolation portion is smaller than the width of the connecting portion.

Abstract: A photoelectric conversion apparatus includes a semiconductor layer having an avalanche photodiode, and a wiring structure electrically connected to the semiconductor layer. In a plan view, the photoelectric conversion apparatus comprises a pixel region including the avalanche photodiode, and a peripheral region located between the pixel region and an outer edge of the photoelectric conversion apparatus. A third wiring layer is located between a first wiring layer and a second wiring layer. The first wiring layer includes, in the peripheral region, a first conductive part for transmitting an anode potential of the avalanche photodiode. The second wiring layer includes, in the peripheral region, a second conductive part for transmitting a second potential different from the anode potential. The first conductive part and the second conductive part overlap in the plan view.

Abstract: A photoelectric conversion apparatus comprising an avalanche diode disposed in a semiconductor layer having a first surface and a second surface, wherein the avalanche diode includes a first semiconductor region disposed at a first depth, a second semiconductor region disposed at a second depth deeper from the second surface than the first depth, a third semiconductor region disposed at an edge of the first semiconductor region, a first wiring connected to the first semiconductor region, a second wiring connected to the second semiconductor region, and a third wiring not connected to the semiconductor layer, at least a part of the third wiring overlapping with the third semiconductor region in a planar view, and wherein a third voltage to be supplied to the third wiring is a value between a first voltage to be supplied to the first wiring and a second voltage to be supplied to the second wiring.

Abstract: A photoelectric conversion apparatus includes a first semiconductor layer having a photoelectric conversion element, a second semiconductor layer including circuitry for processing a signal based on a charge obtained by the photoelectric conversion element, a first wiring structure electrically connected to the first semiconductor layer, a second wiring structure electrically connected to the second semiconductor layer, and a coupling part that couples the first wiring structure to the second wiring structure. In a plan view, the apparatus includes a pixel region having the photoelectric conversion element, and a peripheral region located between the pixel region and an outer edge of the photoelectric conversion apparatus. The first wiring structure includes, in the peripheral region, a first conductive part having a mesh-shaped part. The first conductive part is connected to a pad facing outside the photoelectric conversion apparatus.

Abstract: Photoelectric conversion apparatus including semiconductor layer includes pixel array region and peripheral region. The semiconductor layer has first and second faces. Each pixel includes first semiconductor region of first conductivity type arranged on the first face side and second semiconductor region of second conductivity type arranged on the second face side, and predetermined voltage causing avalanche multiplication operation is supplied between the first semiconductor region and the second semiconductor region. The peripheral region includes third semiconductor region of the first conductivity type arranged on the first face side, fourth semiconductor region of the second conductivity type arranged apart from the third semiconductor region, and fifth semiconductor region of the first conductivity type arranged, close to the third semiconductor region, between the third semiconductor region and the fourth semiconductor region.

Abstract: A system that can acquire a larger amount of information is provided. In the disclosure, calculation processing is performed on a data set including a plurality of pieces of data each including light amount distribution information on a two-dimensional plane that is acquired by a detection unit and time information indicating a time at which the light amount distribution information is acquired. In the calculation processing, among vectors in traveling directions of observation target light, a vector component in a direction orthogonal to the two-dimensional plane is estimated from the data set.

Abstract: A thermosensitive recording medium includes a support, and a thermosensitive recording layer disposed on or above the support, wherein the thermosensitive recording layer includes a non-phenolic color developer and a sensitizer that includes fatty acid amide, and wherein an amount of the fatty acid amide in the sensitizer is 60% by mass or greater.

Abstract: A photoelectric conversion apparatus includes an avalanche diode arranged in a semiconductor layer having a first surface and a second surface facing the first surface. The avalanche diode includes a first semiconductor region of a first conductivity type, which is arranged at a first depth, a second semiconductor region of a second conductivity type, which is arranged at a second depth deeper than the first depth with respect to the second surface, a third semiconductor region provided in contact with an end of the first semiconductor region in a planar view from the second surface, a first wiring portion connected to the first semiconductor region, and a second wiring portion connected to the second semiconductor region. In a planar view from the second surface, at least part of a boundary between an insulating film and the second wiring portion that faces the first wiring portion overlaps the third semiconductor region and does not overlap the first semiconductor region.

Abstract: A photoelectric conversion apparatus comprising an avalanche diode disposed in a semiconductor layer having a first surface and a second surface opposite the first surface. The avalanche diode includes a first semiconductor region of first conductivity type disposed at a first depth and a second semiconductor region of second conductivity type disposed at a second depth deeper than the first depth with respect to the second surface. An oxide film and a protective film stacked on the oxide film are disposed on the second surface of the semiconductor layer. There is a point at which dsio>(?sio/?prot)×dprot/2 is satisfied, where dsio is a thickness of the oxide film, dprot is a thickness of the protective film, ?sio is a relative permittivity of the oxide film, and ?prot is a relative permittivity of the protective film.

Abstract: A photoelectric conversion device includes a circuit provided between an avalanche photodiode and a power source, a counter configured to count an output signal output from the avalanche photodiode, and a memory into which time information indicating that a count value of the counter has reached a threshold value within a predetermined exposure period shorter than an exposure time is written, wherein a clock signal is configured to be input to the circuit in the exposure period.