Abstract: Disclosed is a nonaqueous secondary battery (100) comprising a positive electrode (155) having a positive current collector (151) made of a metal, and a positive electrode active material (153) composed of a lithium-metal complex oxide. The surface of the positive electrode active material (153) is coated with a lithium salt (158) having an average thickness of 20-50 nm.

Abstract: There are provided a positive electrode active material for an alkaline storage battery, a positive electrode for an alkaline storage battery, and an alkaline storage battery each of which has an excellent output characteristics and also has an excellent self-discharge characteristic and an excellent cycle lifetime characteristic. The positive electrode active material for an alkaline storage battery according to the present invention has nickel hydroxide particles each containing at least magnesium in a solid solution state and a cobalt compound layer coating the surface of each of the nickel hydroxide particles. Among them, the cobalt compound layer contains cobalt having an average valence of not less than 2.6 and not more than 3.0 and also contains sodium at a proportion of less than 0.10 wt % to the total weight of the cobalt compound layer. The positive electrode active material for an alkaline storage battery according to the present invention has a conductivity smaller than 1.

Abstract: Provided are a III/V group nitride semiconductor causing an oxidation-reduction reaction at a high photoconversion efficiency by irradiation of light, a photocatalytic semiconductor device, a photocatalytic oxidation-reduction reaction apparatus, and an execution process of a photoelectrochemical reaction. In the III/V group nitride semiconductor, the full width at half maximum of an X-ray rocking curve on a catalytic reaction surface thereof is 400 arcsec or less, and a carrier density in a surface layer portion having the catalytic reaction surface is 1.5×1016 cm?3 or more, but 3.0×1018 cm?3 or less. The photocatalytic semiconductor device has the III/V group nitride semiconductor laminated on a substrate.

Abstract: There are provided a low-cost positive electrode for an alkaline storage battery which retains an excellent current collectivity over a long period of time and a low-cost alkaline storage battery which retains an excellent charge/discharge efficiency over a long period of time. A positive electrode for an alkaline storage battery according to the present invention has a positive electrode substrate including a resin skeleton made of a resin and having a three-dimensional network structure and a nickel coating layer made of nickel and coating the resin skeleton and also having a void portion in which a plurality of pores are coupled in three dimensions and a positive electrode active material containing nickel hydroxide particles and filled in the void portion of the positive electrode substrate. Among them, the nickel coating layer has an average thickness of not less than 0.5 ?m and not more than 5 ?m.

Abstract: A battery is adapted such that a nickel hydroxide particle group constituted of a number of nickel hydroxide particles filled in a void part of a positive electrode substrate contains, at a ratio of 15 wt % or less, small-diameter nickel hydroxide particles each having a particle diameter of 5 ?m or less. The positive electrode substrate is configured such that a front-surface-side nickel layer and a back-surface-side nickel layer are made larger in thickness than a middle nickel layer, and an average thickness B of either the front-surface-side nickel layer or the back-surface-side nickel layer, which is thicker one, and an average thickness C of the middle nickel layer satisfy a relation of C/B?0.6.

Abstract: To provide a method of controlling charge and discharge of a secondary battery for automatic guided vehicle that can decide the timing of refresh charge and discharge accurately and minimize the frequency of refresh charge and discharge.

Abstract: To provide a method of controlling charge and discharge of a secondary battery for automatic guided vehicle that can decide the timing of refresh charge and discharge accurately and minimize the frequency of refresh charge and discharge.

Abstract: According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0<x<0.35) is provided. The crystal-growing method includes a step of epitaxially growing the II-VI single crystalline semiconductor on a substrate by: supplying a II element Zn onto the substrate by using a molecular beam from a ZnSe compound source and a molecular beam from a Zn elemental source; supplying a II element Cd onto the substrate by using a molecular beam from a CdSe compound source; and supplying a VI element Se onto the substrate by using a molecular beam from a ZnSe compound source.

Abstract: A crystal-growth method includes a process of filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe and ZnS compounds, in their respective effusion cells, and a crystal-growth process of a Zn.sub.1-Y Mg.sub.Y S.sub.Z Se.sub.1-Z (0<Y>1 and 0<Z>1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.

Abstract: The invention provides a reflector for a semiconductor device which oscillates in the region from the near infrared region to the visible and short wavelength region, and a method of manufacturing the reflector. With an RF magnetron sputtering apparatus, a dielectric reflector of deposited films is formed on an end-face of a ZnSe semiconductor laser device. The deposited films are formed by 3 repetitions of alternately depositing an SiO.sub.2 film and a TiO.sub.2 film which each has an optical thickness of a quarter of the oscillating wavelength of the semiconductor laser device such that a reflectance at the oscillating wavelength of the laser device is over 90%. The dielectric reflector improves current--light output characteristics of the laser device compared to a conventional semiconductor laser device provided with no dielectric reflector.

Abstract: Nonlinear optical thin-films are disclosed. The nonlinear optical thin-film is comprised of a substrate, superlattice thin films formed separated on the surface of the substrate and a cover thin film of an insulating material or a semiconductor which covers the surface of the substrate on which the superlattice thin films are formed. Each superlattice thin film is formed by depositing two kinds of semiconductors having different band-gap energies alternatively.

Abstract: A pressure-sensitive resistance element comprising a first contact electrode formed on a first electrically insulating base plate, a second contact electrode formed on a second electrically insulating base plate disposed facing the first contact electrode, a first and/or a second pressure-sensitive electrically conductive layer formed on the whole surface of at least one of the first and second contact electrode regions, and a first and/or second pressure-sensitive electrically conduct pattern formed on at least one of the pressure-sensitive electrically conductive layer and the contact electrode having no pressure-sensitive electrically conductive layer thereon.

Abstract: A process (I), for producing a pressure-sensitive electroconductive sheet by (A), forming conductive circuits or electrodes in a flexible porous substrate and (B), applying, followed by curing a pressure-sensitive conductive paste to either or both sides of the substrate to form a pressure-sensitive conductive layer; and a process (II) for producing a pressure-sensitive electroconductive sheet by (A), forming conductive circuits or electrodes in a flexible porous subhstrate, (B), subsequently applying, followed by curing, a pressure-sensitive conductive paste to either side of the substrate to form a pressure-sensitive conductive layer, and (C), applying, followed by curing, insulating silicone rubber to the side of the substrate on which the pressure-sensitive conductive layer is not formed to form an insulating silicone rubber layer.