Abstract: In a display apparatus simultaneous left and right views with reduced crosstalk provide a stereoscopic image. The apparatus includes a liquid crystal display having first and second image forming areas including horizontal lines, and an optical unit in which first and second polarizing areas, corresponding to the image forming areas, are arranged. Frame images display a right eye image in the first image forming areas, and display a left eye image in the second image forming areas. The image forming areas are alternately switched or, updated every time a frame is switched. A boundary between the first and second image forming areas is moved to replace the first and second image forming areas, which display the right eye image and the left eye image. The first and second polarizing areas of the optical unit interchange phase difference states with each other.

Abstract: In a method of manufacturing a semiconductor device, a refractory metal film is stacked on a first wiring metal film. An antireflection film is deposited on the refractory metal film. A wiring including the first wiring metal film, the refractory metal film, and the antireflection film is formed, and an interlayer insulating film is formed on the wiring. The interlayer insulating film is etched to form a contact hole so that a surface of the antireflection film corresponds to an uppermost layer of the wiring and an etching by-product is produced on a sidewall of the contact hole. The etching by-product produced on the sidewall of the contact hole is then removed. Thereafter, a portion of the antireflection film located in a bottom portion of the contact hole is removed. A second wiring metal film is then deposited through the contact hole.

Abstract: Provided are a semiconductor device having a multilayer wiring structure and a method of manufacturing the semiconductor device having the multilayer wiring structure, including a method of forming an antireflection film. According to the method, no crown is produced in a contact hole, long-term reliability is high, productivity and cost efficiency are excellent, and a via hole resistance is sufficient low. A stack film which is composed of a refractory metal film and an antireflection film made of Si or a Si compound is located on a lower-layer aluminum alloy film.