Abstract: To reduce an operation synchronization failure of recliners on both sides of a seat frame, thereby enabling smoother operation despite variations in the dimensional accuracy of the seat frame. A seat recliner structure includes: recliners which are provided on the left and right sides of a cushion frame and a back frame to recline the back frame relative to the cushion frame; and a connecting rod which connects the left and right recliners to synchronize them, wherein the left and right recliners have different backlashes, and the backlash of the driving-side recliner is smaller than the backlash of the driven-side recliner.

Abstract: The present invention prevents a three-dimensional fabric arranged in front surfaces of speakers from flapping due to sound. In the respective front surface sides of, sound-emitting direction regulating members that include annular portions that project forward by a predetermined distance are arranged. A three-dimensional fabric is tensioned and arranged so as to cover the front surface sides of the sound-emitting direction regulating members. When the three-dimensional fabric is pressed against the annular portions configuring the sound-emitting direction regulating members, the annular portions bite into the three-dimensional fabric since the three-dimensional fabric has a predetermined thickness. The annular portions are provided so as to surround diaphragms of the speakers. Sound output from the speakers passes inside the annular portions.

Abstract: A headrest in which a pad layer is integrally formed, including a portion with a narrow gap, between a mechanism having various types of incorporated functions and a skin member. A shock absorbing member that is an injection-passage-forming member having a foaming raw material injection passage formed so as to run substantially along a direction that is the vertical direction of the headrest in orientation of when a seat is attached, is set in the inside of a skin member, and a foaming raw material for forming the pad layer is injected through the foaming raw material injection passage. The configuration preferably causes the foaming raw material to spread by the foaming start time, as the foaming raw material spreads to the outer side of the headrest, that is, to the inner surface of the skin member, where the pad layer is required to be formed.

Abstract: There is provided a sound and vibration information collecting mechanism, which collects low-frequency sound and vibration information with a predetermined frequency or lower from a detection target, the mechanism including a resonance layer, which includes a natural oscillator having a natural frequency within a frequency band of the sound and vibration information being a collection target, and generates a resonance carrier by the natural oscillator emphasizing the sound and vibration information; and a sensor, which detects the resonance carrier. The mechanism detects a bioacoustic signal and a biosignal more accurately than conventionally.

Abstract: A headrest in which a pad layer is integrally formed, including a portion with a narrow gap, between a mechanism having various types of incorporated functions and a skin member. A shock absorbing member that is an injection-passage-forming member having a foaming raw material injection passage formed so as to run substantially along a direction that is the vertical direction of the headrest in orientation of when a seat is attached, is set in the inside of a skin member, and a foaming raw material for forming the pad layer is injected through the foaming raw material injection passage. The configuration preferably causes the foaming raw material to spread by the foaming start time, as the foaming raw material spreads to the outer side of the headrest, that is, to the inner surface of the skin member, where the pad layer is required to be formed.

Abstract: The present invention prevents a three-dimensional fabric arranged in front surfaces of speakers from flapping due to sound. In the respective front surface sides of, sound-emitting direction regulating members that include annular portions that project forward by a predetermined distance are arranged. A three-dimensional fabric is tensioned and arranged so as to cover the front surface sides of the sound-emitting direction regulating members. When the three-dimensional fabric is pressed against the annular portions configuring the sound-emitting direction regulating members, the annular portions bite into the three-dimensional fabric since the three-dimensional fabric has a predetermined thickness. The annular portions are provided so as to surround diaphragms of the speakers. Sound output from the speakers passes inside the annular portions.

Abstract: There is provided a sound and vibration information collecting mechanism, which collects low-frequency sound and vibration information with a predetermined frequency or lower from a detection target, the mechanism including a resonance layer, which includes a natural oscillator having a natural frequency within a frequency band of the sound and vibration information being a collection target, and generates a resonance carrier by the natural oscillator emphasizing the sound and vibration information; and a sensor, which detects the resonance carrier. The mechanism detects a bioacoustic signal and a biosignal more accurately than conventionally.

Abstract: An engine provided with a variable parallel supercharging system (9) comprising a first supercharger (10) which is driven by exhaust gas which flows in a first exhaust gas route (41) and which pressurizes intake air which flows in a first intake air route (3) and also comprising a second supercharger (20) which is driven by exhaust gas which flows in a second exhaust gas route (42) and which pressurizes intake air which flows in a second intake air route (4), a supercharging pressure sensor (63) for detecting the pressure of the pressurized intake air, a first supercharger rotation sensor (61) for detecting the rotational speed of the first supercharger (10), a second supercharger rotation sensor (62) for detecting the rotational speed of the second supercharger (20), a first variable actuator (14) for adjusting the capacity of the first supercharger (10), a second variable actuator (24) for adjusting the capacity of the second supercharger (20), and a control device for controlling each of the variable actua

Abstract: An engine (100) provided with a variable series supercharging system (7) composed of a high-pressure supercharger (10) and a low-pressure supercharger (20), a supercharging pressure sensor (63) for detecting the pressure of intake air pressurized by the variable series supercharging system (7), a high-pressure supercharger rotation sensor (61) for detecting the rotational speed of the high-pressure supercharger (10), a variable actuator (14) for adjusting the capacity of the high-pressure supercharger (10), and a control device (60) capable of controlling the variable actuator (14). The control device (60) controls the variable actuator (14) based on detection signals from the supercharging pressure sensor (63) and the high-pressure supercharger rotation sensor (61).

Abstract: An engine provided with a variable parallel supercharging system (9) comprising a first supercharger (10) which is driven by exhaust gas which flows in a first exhaust gas route (41) and which pressurizes intake air which flows in a first intake air route (3) and also comprising a second supercharger (20) which is driven by exhaust gas which flows in a second exhaust gas route (42) and which pressurizes intake air which flows in a second intake air route (4), a supercharging pressure sensor (63) for detecting the pressure of the pressurized intake air, a first supercharger rotation sensor (61) for detecting the rotational speed of the first supercharger (10), a second supercharger rotation sensor (62) for detecting the rotational speed of the second supercharger (20), a first variable actuator (14) for adjusting the capacity of the first supercharger (10), a second variable actuator (24) for adjusting the capacity of the second supercharger (20), and a control device for controlling each of the variable actua

Abstract: An engine (100) provided with a variable series supercharging system (7) composed of a high-pressure supercharger (10) and a low-pressure supercharger (20), a supercharging pressure sensor (63) for detecting the pressure of intake air pressurized by the variable series supercharging system (7), a high-pressure supercharger rotation sensor (61) for detecting the rotational speed of the high-pressure supercharger (10), a variable actuator (14) for adjusting the capacity of the high-pressure supercharger (10), and a control device (60) capable of controlling the variable actuator (14). The control device (60) controls the variable actuator (14) based on detection signals from the supercharging pressure sensor (63) and the high-pressure supercharger rotation sensor (61).

Abstract: A memory suitable for integration having a memory structure where at least one capacitor formed by using a ferroelectric is integrated on a semiconductor device substrate. In a unit cell structure forming the memory, an upper electrode, located at an upper position among electrodes constituting the capacitor, is directly connected to a high density diffusion layer constituting a MOS transistor.

Abstract: A semiconductor device that includes at least one MOS transistor that is formed on a semiconductor substrate, in which there is a structure for protecting circuit elements such as transistors from excessive static electricity from the outside, such as surge input and static electricity generated during the production process. Transistors and diodes are formed so that contact is made between a high impurity concentration diffusion region that forms the source or drain and a low impurity concentration diffusion region that has a conductivity opposite that of the high impurity concentration diffusion region that forms an LDD structure transistor offset. By making contact between a high impurity concentration diffusion region and a low impurity concentration diffusion region, there is formed a circuit element that reduces the junction breakdown voltage. In addition, by using the offset of the CMOS structure, there is no increase in the number of production process steps.

Abstract: A semiconductor device having a ferroelectric film or a polycrystalline silicon gate, a humidity-resistant hydrogen barrier film, like TiN film, TiON film, etc., formed by hydrogen non-emission film forming method over the ferroelectric film or the polycrystalline silicon gate.

Abstract: A semiconductor device comprised of a transistor (TR) having a gate electrode, a source region and a drain region, and a ferroelectric capacitor formed above a local oxide film. The capacitor has a ferroelectric film, and upper and lower electrodes that sandwich the film therebetween. The lower electrode and the source region are connected to each other through a wiring or interconnection which is formed of a conductive reaction-preventing film with an Al wiring electrode stacked thereon. The conductive reaction-preventing film is formed of TiN, MoSi, W, etc. If an annealing treatment is carried out for the purpose of improving the characteristics of the semiconductor device or a final protection film is formed after the formation of the wiring electrode, the wiring electrode and the upper electrode do not react with each other. Thus, excellent characteristics of the ferroelectric film are obtained so that a highly integrated ferroelectric memory having high performance can be formed.

Abstract: The structural body of a ferroelectric capacitor C is located over a source region (23) between a gate electrode (22) and a local oxide film (26). The structural body has a ferroelectric film (29) and an upper electrode (30) and a lower electrode (31) for sandwiching the ferroelectric film (29), and is provided with a conductive oxide film (32) between the lower electrode (31) and the source region (23). The conductive oxide film (32) is ITO, ReO.sub.2, RuO.sub.2 or MoO.sub.3. If an oxygen anneal is conducted after forming the ferroelectric film (29) for the purpose of reforming crystallizability of the ferroelectric film (29), oxygen enters into the conductive oxide film (32) to some extent. As a result, the conductive oxide film (32) is further oxidized, and becomes a so-called oxide barrier or dummy layer.

Abstract: Non-volatile memories each employing a ferroelectric capacitor composed of a ferroelectric film formed on a diffused layer serving as a source or a drain. A lower electrode is composed mainly of a metal, while the ferroelectric film is connected to a high-concentration diffused layer at a contact hole. Formed on the high-concentration diffused layer is a refractory metal silicide on which to form the ferroelectric substance film.

Abstract: A ferroelectric film is deposited that has desired stoichiometric composition by employing one of two methods: One method comprises depositing a ferroelectric film, e.g., PbTiO.sub.3, followed by ion implanting the deposited ferroelectric film with one of the constitutents or elements comprising the film, such as, Pb, Ti or O.sub.2. The other method comprises depositing the film by sputtering employing a sputtering gas medium or atmosphere that includes either O.sub.3 or a gaseous form of Pb, such as Pb(C.sub.2 H.sub.5).sub.4, PbCl.sub.4, and Pb.sub.2 O(OH).sub.2, followed by annealing.

Abstract: A microelectronic device to detect mechanical vibrations and analyze vibration frequencies. The device comprises a vibrator in the form of thin plate supported on a semiconductor substrate in the manner of either cantilever beam or fixed beam. The vibrator is either conductive or coated with a conductive film to serve as a vibratable electrode layer. The substrate is formed with a fixed electrode layer in an area opposite to the vibrator, and an electric circuit to detect a change in the capacitance between the fixed and vibratable electrode layers is integrated with the substrate. For discrimination of vibration frequencies without using any bandpass filter, the device may have a plurality of vibrators different in resonance frequency each paired with a fixed electrode layer.