Abstract: A semiconductor storage device includes a substrate, a plurality of conductive layers arranged in a first direction intersecting a surface of the substrate, and a semiconductor layer extending in the first direction and penetrating the plurality of conductive layers. The plurality of conductive layers includes a first conductive layer and a second conductive layer that are adjacent to each other, a third conductive layer and a fourth conductive layer that are adjacent to each other, and a fifth conductive layer and a sixth conductive layer that are adjacent to each other.

Abstract: A semiconductor memory device includes: a substrate including a first and a second regions; first wiring layers disposed in a first direction; a second wiring layer; a third wiring layer closer to the substrate than the first and the second wiring layers; a semiconductor film that penetrates the first and the second wiring layers, and is connected to the third wiring layer; and a gate insulating film disposed between the semiconductor film and the first wiring layers. The first wiring layers include first conductive films opposed to the semiconductor film in the first region, and first films in the second region. The second wiring layer includes a second conductive film opposed to the semiconductor film in the first region, and a second film in the second region. The second film is different from the first films.

Abstract: A semiconductor storage device includes a substrate, a plurality of conductive layers arranged in a first direction intersecting a surface of the substrate, and a semiconductor layer extending in the first direction and penetrating the plurality of conductive layers. The plurality of conductive layers includes a first conductive layer and a second conductive layer that are adjacent to each other, a third conductive layer and a fourth conductive layer that are adjacent to each other, and a fifth conductive layer and a sixth conductive layer that are adjacent to each other.

Abstract: A semiconductor memory device includes: a substrate including a first and a second regions; first wiring layers disposed in a first direction; a second wiring layer; a third wiring layer closer to the substrate than the first and the second wiring layers; a semiconductor film that penetrates the first and the second wiring layers, and is connected to the third wiring layer; and a gate insulating film disposed between the semiconductor film and the first wiring layers. The first wiring layers include first conductive films opposed to the semiconductor film in the first region, and first films in the second region. The second wiring layer includes a second conductive film opposed to the semiconductor film in the first region, and a second film in the second region. The second film is different from the first films.