Abstract: Provided is a semiconductor device including: a silicon substrate; at least two trenches spaced apart from each other, being in parallel with each other, and being formed by vertically etching the silicon substrate from a surface thereof; an electrically insulating film for burying therein at least bottom surfaces of the trenches; a base region formed in a region of the silicon substrate located between the two trenches; and an emitter region and a collector region formed on portions of side surfaces of the trenches, respectively, the portions of the sides located above the insulating film and formed in the base region.

Abstract: MOS transistors each having different ON withstanding voltages that are drain withstanding voltages when gates thereof are turned on are formed on the same substrate. One of the MOS transistors having the lower ON withstand voltage is used as a memory element. Using the fact that the drain withstanding voltage is low when a gate thereof is turned on, a short-circuit occurs in a PN junction between a drain and the substrate of the one of the MOS transistors having the lower ON withstand voltage to write data.

Abstract: Provided is a protection circuit device for a battery having a plurality of secondary batteries connected in series, in which power supply terminals of a reference voltage circuit and a voltage detection circuit are connected to a positive electrode of a secondary battery to be detected, ground terminals of the reference voltage circuit and the voltage detection circuit are connected to a negative electrode of the secondary battery to be detected, respectively, and a withstanding voltage of elements constituting those circuits is set to be lower than an overall voltage of the battery.

Abstract: Provided is a memory circuit including: memory cells (A) arranged in columns and rows; memory cells (B) each provided for each of the rows for storing information indicative of whether writing into the memory cells (A) of the each of the rows has been completed or not; and a circuit for selecting one of the rows by utilizing the information stored in the memory cells (B). The memory circuit writes information into the memory cell (B) upon completion of writing into the memory cells (A) of a given one of the rows. By utilizing a change in the information stored in the memory cell (B), the given one of the rows is switched from a selected state to a non-selected state, and a next row is switched from the non-selected state to the selected state so that writing is enabled. The operation is repeated to thereby sequentially select a row to be written.

Abstract: Provided is a non-volatile semiconductor memory circuit capable of improving data retention characteristics and decreasing an area thereof by connecting a constant current circuit (1) and a non-volatile memory cell (2) in series, and setting a connection point therebetween to be an output, to thereby enable writing, in a reading mode or a retention mode, in the non-volatile memory cell (2) which is in a write state. The non-volatile semiconductor memory circuit includes: a power supply for data reading and retaining and a power supply for data rewriting which are provided independently; and a transistor (3) between the output and the power supply for data rewriting, in which the transistor (3) is brought into conduction state when data is rewritten.

Abstract: MOS transistors each having different ON withstanding voltages that are drain withstanding voltages when gates thereof are turned on are formed on the same substrate. One of the MOS transistors having the lower ON withstand voltage is used as a memory element. Using the fact that the drain withstanding voltage is low when a gate thereof is turned on, a short-circuit occurs in a PN junction between a drain and the substrate of the one of the MOS transistors having the lower ON withstand voltage to write data.

Abstract: Provided is a semiconductor device including: a silicon substrate; at least two trenches spaced apart from each other, being in parallel with each other, and being formed by vertically etching the silicon substrate from a surface thereof; an electrically insulating film for burying therein at least bottom surfaces of the trenches; a base region formed in a region of the silicon substrate located between the two trenches; and an emitter region and a collector region formed on portions of side surfaces of the trenches, respectively, the portions of the sides located above the insulating film and formed in the base region.

Abstract: Retrieval information is input from a terminal device to the server of a broadcasting station via the Internet. The broadcasting station's server converts the retrieval information into text information and broadcasts it. The broadcasted text information is received by a terminal device equipped with a teletext broadcasting receiving function. Then, the requested information is searched for out of pre-registered provided information, and thus searched information is transmitted via the Internet to the terminal device that made the request.