Abstract: Provided is a susceptor capable of achieving improved thermal uniformity while suppressing reduction in its temperature increase rate and heat utilization efficiency. A susceptor includes a plate-shaped first member including a wafer placement surface on which to place a wafer, and a second member supporting the first member and laid on the first member in the direction perpendicular to the wafer placement surface. The thermal conductivity of the first member is higher than the thermal conductivity of the second member.

Abstract: Provided is a susceptor capable of achieving improved thermal uniformity while suppressing reduction in its temperature increase rate and heat utilization efficiency. A susceptor includes a plate-shaped first member including a wafer placement surface on which to place a wafer, and a second member supporting the first member and laid on the first member in the direction perpendicular to the wafer placement surface. The thermal conductivity of the first member is higher than the thermal conductivity of the second member.

Abstract: Provided is a supporting substrate (30) to be bonded on a single crystalline wafer composed of a single crystalline body. The supporting substrate is provided with a silicon carbide polycrystalline substrate (10) composed of a silicon carbide polycrystalline body, and a coat layer (20) deposited on the silicon carbide polycrystalline substrate (10). The coat layer (20) is composed of silicon carbide or silicon and is in contact with the single crystalline wafer, and the arithmetic average roughness of the contact surface (22) of the coat layer (20) in contact with the single crystalline wafer is 1 nm or less.

Abstract: It is an object of the present invention to provide a method for simply producing a high purity silicon carbide sintered body having no remaining metal silicon and excellent heat resistance. A method for producing a silicon carbide sintered body of the present invention comprises the steps of: preparing a slurry by dispersing silicon carbide powder in a solvent; forming a molded body by pouring the slurry into a mold and effecting calcination for the slurry in a vacuum atmosphere or in an inert gas atmosphere; and sealing pores within the calcined molded body by impregnating the pores with high purity metal silicon molten by heating, and allowing the high purity metal silicon and carbon contained in the molded body to react on each other in the pores so as to produce silicon carbide.

Abstract: A silicon carbide powder which can increase the densities of a green body and a sintered silicon carbide, a method of producing a green body having a high density and excellent handling properties, and a method of producing a sintered silicon carbide having a high density, in which methods the silicon carbide powder is used. The silicon carbide powder includes at a particulate volume ratio of 20% to 80% a silicon carbide powder whose model ratio is 1.7 &mgr;m to 2.7 &mgr;m and a silicon carbide powder whose model ratio is 10.5 &mgr;m to 21.5 &mgr;m. The silicon carbide powder is used in the method of producing a green body and in the method of producing a sintered silicon carbide powder.

Abstract: It is an object of the present invention to provide a method for simply producing a high purity silicon carbide sintered body having no remaining metal silicon and excellent heat resistance. A method for producing a silicon carbide sintered body of the present invention comprises the steps of: preparing a slurry by dispersing silicon carbide powder in a solvent; forming a molded body by pouring the slurry into a mold and effecting calcination for the slurry in a vacuum atmosphere or in an inert gas atmosphere; and sealing pores within the calcined molded body by impregnating the pores with high purity metal silicon molten by heating, and allowing the high purity metal silicon and carbon contained in the molded body to react on each other in the pores so as to produce silicon carbide.

Abstract: A method for producing a sintered silicon carbide body which has excellent strength and the like and in which cracking and breaking are prevented is provided. In the method for producing a sintered silicon carbide body, metallic silicon is, in a vacuum atmosphere or in a non-oxidizing atmosphere, impregnated into a molded body containing silicon carbide and carbon so as to form an impregnated body, and the impregnated body is cooled in a state of being provided with a temperature distribution of 0.1-1.5° C./cm.