Abstract: Disclosed herein is a mask pattern generating method for generating a mask pattern to be formed in a Levenson phase shift mask used in a light exposure process for exposing a photoresist film formed on a fabricated film to be patterned into a conductive layer to light when the conductive layer is patterned by photolithography, the conductive layer including a gate electrode formed in an active region extending in a first direction in a wafer in such a manner as to extend in a second direction orthogonal to the first direction, the mask pattern generating method including: a phase shifter arranging step; a shifter pattern image obtaining step; a trim pattern image obtaining step; and a phase shifter elongating step.

Abstract: An air-cooled engine (10) has a fan cover (16) for covering a cooling fan (14). The cover (16) is composed of a fan-cover peripheral wall (44) for covering the outside of the cooling fan (14), and a top board (45) for closing off one end of the fan-cover peripheral wall (44). The fan-cover peripheral wall (44) has an internally disposed guiding duct (47) for guiding cooling air (Wi) from the cooling fan (14) to an engine main body (12). A first fastening member (42) secures a portion of the external part of the fan-cover peripheral wall (44) that is proximal to the guiding duct (47) to a casing (25) of the engine main body (12). A second fastening member (41) extends from the casing (25) and through the fan-cover peripheral wall (44), and secures a top board (45) in a portion that is at a distance from the guiding duct (47).

Abstract: A fuel tank used for a general-purpose engine comprises a hollow tank body for storing fuel and a filter disposed within the tank body. The tank body has a bottom with a trap having an internal surface portion lying in a first plane. The filter comprises a tubular body extending from the internal surface portion of the trap and a fluororesin element supported by the tubular body so that a main surface of the fluororesin element lies in a second plane disposed at an angle of inclination relative to the first plane. The fluororesin element has a property of not allowing water to pass therethrough but allowing fuel to pass therethrough.

Abstract: A method of forming an exposure mask pattern providing edge division points P at edges of a design pattern (1) by predetermined intervals and correcting edge positions for each divided edge portion, wherein, for the design pattern (1), rectangular patterns (10) and (11) are formed having pairs of facing long sides and facing short sides in the design pattern (1). The rectangular patterns (10) and (11) are formed at portions having widths W1a and W2a of the long sides in the design pattern (1) within a predetermined interval W0, so that W1a?W0 and W2a?W0. Next, at each of the rectangular patterns (10) and (11), new edge division points P (P1) are given along each of the facing long sides at predetermined intervals t from start points P0 sharing a short side. Due to this, the exposure mask pattern used for lithography can be simplified and the precision of formation of a transfer pattern can be improved.

Abstract: Disclosed herein is a mask pattern generating method for generating a mask pattern to be formed in a Levenson phase shift mask used in a light exposure process for exposing a photoresist film formed on a fabricated film to be patterned into a conductive layer to light when the conductive layer is patterned by photolithography, the conductive layer including a gate electrode formed in an active region extending in a first direction in a wafer in such a manner as to extend in a second direction orthogonal to the first direction, the mask pattern generating method including: a phase shifter arranging step; a shifter pattern image obtaining step; a trim pattern image obtaining step; and a phase shifter elongating step.

Abstract: Disclosed is an exposure pattern forming method of forming an exposure pattern by correcting each pattern portion constituting a design pattern by a correction amount, which amount is previously prepared so as to correspond to both a line width of the pattern portion and a space width of a space portion adjacent to the pattern portion, characterized by including the steps of: subjecting the design pattern to graphic form arithmetic operation, to extract each pattern portion for each target line width, and to extract space portion for each target space width; and subjecting each pattern portion extracted for each target line width and the space portion extracted for each target space width to graphic form arithmetic operation based on the corresponding one of the correction amounts, to thereby correct the pattern portion having each target line width for each target space width.

Abstract: The present invention provides an exposure pattern forming method using a rule-based proximity effect correction method to which graphic form arithmetic operation is applied.

Abstract: A method is provided for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.

Abstract: The present invention provides an exposure pattern forming method using a rule-based proximity effect correction method to which graphic form arithmetic operation is applied.

Abstract: A mask pattern correction method able to easily eliminate a fine step difference generated after line width correction of a pattern is provided. This is made a correction method of a mask pattern comprising a step of finding a difference between a graphic obtained by oversizing a pattern including a corner and temporary regions formed by shifting the pattern edge; a step of extracting an edge not contacting the line width corrected figure (region designation edge) from the difference; a step of forming a rectangle having the region designation edge as one side; and a step of deleting the rectangle from the difference to obtain a pattern burying the fine step difference.

Abstract: Disclosed is an exposure pattern forming method of forming an exposure pattern by correcting each pattern portion constituting a design pattern by a correction amount, which amount is previously prepared so as to correspond to both a line width of the pattern portion and a space width of a space portion adjacent to the pattern portion, characterized by including the steps of: subjecting the design pattern to graphic form arithmetic operation, to extract each pattern portion for each target line width, and to extract space portion for each target space width; and subjecting each pattern portion extracted for each target line width and the space portion extracted for each target space width to graphic form arithmetic operation based on the corresponding one of the correction amounts, to thereby correct the pattern portion having each target line width for each target space width.

Abstract: The present invention provides an exposure pattern forming method using a rule-based proximity effect correction method to which graphic form arithmetic operation is applied.

Abstract: A method of forming an exposure mask pattern providing edge division points P at edges of a design pattern 1 by predetermined intervals and correcting edge positions for each divided edge portion, wherein, for the design pattern 1, rectangular patterns 10 and 11 are formed having as long sides a pair of facing sides forming the design pattern 1. At that time, the rectangular patterns 10 and 11 are formed at portions having intervals W1 and W2 of the long sides in the design pattern 1 within a predetermined interval W0. Next, at each of the rectangular patterns 10 and 11, new edge division points P (P1) are given at the long sides at predetermined intervals t from the start points P0 using as the start points P0 two vertexes sharing a short side. Due to this, the exposure mask pattern used for lithography can be simplified and the precision of formation of a transfer pattern can be improved.

Abstract: A fuel tank used for a general-purpose engine is provided. The fuel tank includes a tank body for storing fuel. A filter for separating fuel containing water into fuel and water is provided in a fuel passage within the tank body. The filter includes a fluororesin element having the property of not allowing water to pass through it but allowing fuel to pass through it.

Abstract: An object of the present invention is to accurately verify errors, etc., in programs when corrections of mask data are carried out by the programs. In order to correct the mask data based on predetermined conditions, a method for mask data verification according to the present invention comprises the steps of preparing corrected mask data by using a plurality of programs each of which has a different algorithm, comparing each of corrected mask data which is prepared in the previous step and as a result of the comparison, if there are differences among the corrected mask data, extracting errors which cause problems as mask data from the differences.

Abstract: The present invention provides an exposure pattern forming method using a rule-based proximity effect correction method to which graphic form arithmetic operation is applied.

Abstract: An object of the present invention is to accurately verify errors, etc. in programs when corrections of mask data are carried out by the programs. In order to correct the mask data based on predetermined conditions, a method for mask data verification according to the present invention comprises the steps of preparing corrected mask data by using a plurality of programs each of which has a different algorism, comparing each of corrected mask data which is prepared in the previous step and as a result of the comparison, if there are differences among the corrected mask data, extracting errors which cause troubles as mask data from the differences.

Abstract: A primary radiator is provided which can be used in an attenna to be mounted in an artificial satellite. In particular, the primary radiator is designed to prevent an electrical charge caused by charged particles in a space environment. In the conventional type of radiator, there typically has been no arrangement for preventing such electrical charge which may cause a short-circuited condition resulting in providing noise or communication difficulties. In order to prevent this electrical charging, a fine metallic conductor is passed from the central part of a sub-reflector through an axial central part where an influence for the electromagnetic field is minimal within the circular waveguide constituting the primary radiator. The conductor is then connected to ground in a DC form at a rectangular and circular converter of the primary radiator.