Abstract: The present invention can precisely manufacture an X-ray mask pattern at intervals of less than 10 nm by using a thin film crystalline growth method, applying a laminated layer body of a fine structure having a precision of less than 1 atomic layer onto a substrate, and utilizing the difference in X-ray absorption coefficients. A method of manufacturing an X-ray exposure mask comprises the steps of alternately laminating two kinds of material consisting of a combination of a semiconductor, metal and insulator having substantially equal lattice constants and largely different coefficients of X-ray absorption on a substrate of a crystal body to thicknesses of less than 10 .ANG. by an epitaxial crystal growth method, and manufacturing a mask for exposing streak-like X-rays on a desired resist as a result of the largely different coefficients of X-ray absorption between each layer.

Abstract: Mobility includes a semiconductor substrate, a non-doped layer applied on the semiconductor substrate, an electron supply layer applied on the non-doped layer, and a metal gate layer applied on the electron supply layer. The said electron supply layer has a structure in which impurity atoms serving as electron supply sources as well as scattering sources are arranged regularly, so that the structure is doped in an organized manner. Adjacent impurity atoms are separated from each other in a first direction, parallel to a direction in which an electron wave travels, by a first distance which is not larger than half of the wavelength of an electron wave. In a second direction which is perpendicular to the first direction, adjacent impurity atoms are seperated by a second distance which is not larger than the wavelength of an electron wave.

Abstract: The present invention relates to a method of manufacturing an exposure mask having an unprecedented supermicrostructure for an X-ray exposure method favorable for conventional supermicro exposure using lithography techniques. The method of manufacturing an X-ray exposure mask comprises the steps of alternately laminating two kinds of compound semiconductors as a thin film having a periodic structure with controllability of about one atomic layer on a substrate selectively etching only one material for forming the periodic structure, forming an uneven difference between adjacent layers of the laminate body, and manufacturing a mask for exposing streaks on a desired resist with the aid of a difference of X-rays absorption amounts between each layer by exposing X-ray in parallel to the direction of the laminate layer.

Abstract: A multilayer dielectric optical waveguide (30, 40) is formed on a III-V semiconductor substrate layer (6) comprised of either InGaAsP or AlGaAs. A lower cladding layer (30) of dielectric material such as SiO.sub.x, (x.about.2) having a lower index of refraction than the substrate layer is directionally deposited on an exposed surface (17) of the substrate layer by a controlled evaporation process. A core layer (40) is fabricated on the lower cladding layer by coating an exposed surface (31) of the lower cladding layer with a dielectric material having an index of refraction greater than the index of the cladding layer. One material useful as the core layer is polyimide. Both one-dimensional (FIG. 8) and two-dimensional (FIG. 10) waveguides are capable of being made by appropriate addition of an upper cladding layer (50 or 60) about the core layer. The refractive index of the upper cladding layer is less than the refractive index of the core layer.

Abstract: In a heterostructure distributed Bragg reflector laser, at least one multilayer waveguide substantially comprised of a silicon dielectric compound is monolithically integrated with an active semiconductor heterostructure medium. Bragg reflectors are properly disposed within the waveguide.

Abstract: Highly reproducible, optically flat mirror facets are created by contacting a predetermined area of the InGaAsP/InP heterostructure system with a chemical etchant for a time period sufficient to expose a substantially vertical crystallographic surface throughout the entire heterostructure system. Contact of the exposed surface with HCl causes a preferred crystallographic plane to be exposed as an optically flat mirror facet.