Patents by Inventor Kazuhito Hato

Kazuhito Hato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11730912
    Abstract: A hydrogen supply apparatus includes: an air path having an inlet and an outlet; a fan that is disposed in the air path and produces a flow of air from the inlet to the outlet; a first pipe having an end that forms a first supply port through which to supply hydrogen gas to the air path; a flow control device that is attached to the first pipe and adjusts a flow rate of the hydrogen gas; and a hydrogen gas sensor, disposed downstream of the fan or the end in a direction of flow of the air that detects a concentration of the hydrogen gas in the air path, where the end is disposed between the fan and the outlet or between the fan and the inlet in the air path.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: August 22, 2023
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Yasufumi Takahashi, Kazuhito Hato, Kunihiro Ukai
  • Patent number: 11602472
    Abstract: A hydrogen-containing gas supply system includes one or more hydrogen-containing gas suppliers, one or more acquirers, and a controller. The one or more hydrogen-containing gas suppliers supply a hydrogen-containing gas to one or more areas in a building. The one or more acquirers acquire information indicating that a person is present in the one or more areas. When it is determined that a person is present in a certain area of the one or more areas in accordance with the information acquired by the acquirers, the controller causes at least one of the one or more hydrogen-containing gas suppliers to supply the hydrogen-containing gas to the certain area.
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: March 14, 2023
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Kunihiro Ukai, Kazuhito Hato
  • Patent number: 11417784
    Abstract: The present disclosure is to provide a multi-junction light energy conversion element including a material having a band gap suitable for a light energy conversion layer located upstream in an incidence direction of light. The present disclosure provides a light energy conversion element, comprising a first light energy conversion layer containing SrZn2N2 and a second light energy conversion layer containing an light energy conversion material. The light energy conversion material has a narrower band gap than the SrZn2N2.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: August 16, 2022
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Koki Ueno, Ryosuke Kikuchi, Toru Nakamura, Takahiro Kurabuchi, Yasushi Kaneko, Kazuhito Hato, Fumiyasu Oba, Yu Kumagai
  • Publication number: 20210408305
    Abstract: An inorganic compound semiconductor of the present disclosure contains yttrium, zinc, and nitrogen.
    Type: Application
    Filed: September 14, 2021
    Publication date: December 30, 2021
    Inventors: RYOSUKE KIKUCHI, TORU NAKAMURA, KOKI UENO, TAKAHIRO KURABUCHI, YASUSHI KANEKO, KAZUHITO HATO, FUMIYASU OBA, YU KUMAGAI
  • Publication number: 20200179205
    Abstract: A hydrogen-containing gas supply system includes one or more hydrogen-containing gas suppliers, one or more acquirers, and a controller. The one or more hydrogen-containing gas suppliers supply a hydrogen-containing gas to one or more areas in a building. The one or more acquirers acquire information indicating that a person is present in the one or more areas. When it is determined that a person is present in a certain area of the one or more areas in accordance with the information acquired by the acquirers, the controller causes at least one of the one or more hydrogen-containing gas suppliers to supply the hydrogen-containing gas to the certain area.
    Type: Application
    Filed: February 13, 2020
    Publication date: June 11, 2020
    Inventors: KUNIHIRO UKAI, KAZUHITO HATO
  • Publication number: 20200171265
    Abstract: A hydrogen supply apparatus includes: an air path having an inlet and an outlet; a fan that is disposed in the air path and produces a flow of air from the inlet to the outlet; a first pipe having an end that forms a first supply port through which to supply hydrogen gas to the air path; a flow control device that is attached to the first pipe and adjusts a flow rate of the hydrogen gas; and a hydrogen gas sensor, disposed downstream of the fan or the end in a direction of flow of the air that detects a concentration of the hydrogen gas in the air path, where the end is disposed between the fan and the outlet or between the fan and the inlet in the air path.
    Type: Application
    Filed: February 3, 2020
    Publication date: June 4, 2020
    Inventors: YASUFUMI TAKAHASHI, KAZUHITO HATO, KUNIHIRO UKAI
  • Patent number: 10629764
    Abstract: The present disclosure provides a light energy conversion element in which a material having a bandgap suitable for a light energy conversion layer is used. The light energy conversion element according to the present disclosure comprises a light energy conversion layer containing BaBi2S4 having a hexagonal crystal structure.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: April 21, 2020
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Ryosuke Kikuchi, Toru Nakamura, Takahiro Kurabuchi, Kazuhito Hato, Fumiyasu Oba, Yu Kumagai
  • Publication number: 20190386165
    Abstract: The present disclosure provides a light energy conversion element in which a material having a bandgap suitable for a light energy conversion layer is used. The light energy conversion element according to the present disclosure comprises a light energy conversion layer containing BaBi2S4 having a hexagonal crystal structure.
    Type: Application
    Filed: July 18, 2019
    Publication date: December 19, 2019
    Inventors: RYOSUKE KIKUCHI, TORU NAKAMURA, TAKAHIRO KURABUCHI, KAZUHITO HATO, FUMIYASU OBA, YU KUMAGAI
  • Patent number: 10486134
    Abstract: The present invention provides a porous coordination polymer having high ability of storing a gas. The porous coordination polymer according to the present invention comprises zinc cluster ions and one kind of tricarboxylic acid ions selected from the group consisting of the following chemical formula (I), the following chemical formula (II), and the following chemical formula (III); where X represents a natural number of not less than 1 and not more than 3, wherein the tricarboxylic acid ions are bound to the zinc cluster ions as terdentate ligands.
    Type: Grant
    Filed: July 28, 2017
    Date of Patent: November 26, 2019
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Takaiki Nomura, Hideki Hata, Motomasa Yonezumi, Kazuhito Hato, Atsuo Okaichi
  • Publication number: 20190305154
    Abstract: The present disclosure is to provide a multi-junction light energy conversion element including a material having a band gap suitable for a light energy conversion layer located upstream in an incidence direction of light. The present disclosure provides a light energy conversion element, comprising a first light energy conversion layer containing SrZn2N2 and a second light energy conversion layer containing an light energy conversion material. The light energy conversion material has a narrower band gap than the SrZn2N2.
    Type: Application
    Filed: December 18, 2018
    Publication date: October 3, 2019
    Inventors: KOKI UENO, RYOSUKE KIKUCHI, TORU NAKAMURA, TAKAHIRO KURABUCHI, YASUSHI KANEKO, KAZUHITO HATO, FUMIYASU OBA, YU KUMAGAI
  • Patent number: 10363545
    Abstract: The present invention provides a porous coordination polymer, wherein the porous coordination polymer is formed of unit lattices; each of the unit lattices has a shape of a cube having eight vertexes and twelve sides; each of the vertexes of the unit lattices consists of a Zn4O cluster; each of the sides of the unit lattices consists of a ?OOC—C?C—COO? group. At least a part of the unit lattices contains at least one hydrogen molecule only, or the inside of at least a part of the unit lattices is empty. The present invention provides a novel porous coordination polymer, especially, a porous coordination polymer suitable for separating hydrogen molecules from a gaseous mixture of the hydrogen molecules and impurity molecules (e.g., nitrogen molecules, oxygen molecules, or carbon dioxide molecules).
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: July 30, 2019
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Takaiki Nomura, Hideki Hata, Motomasa Yonezumi, Kazuhito Hato
  • Patent number: 10047444
    Abstract: Provided is a method for generating hydrogen. The method comprising (a) preparing a hydrogen generation device comprising a container, a photo-semiconductor electrode comprising a substrate, a light-blocking first conductive layer, and a first semiconductor photocatalyst layer, a counter electrode, a conductive wire for electrically connecting the first conductive layer to the counter electrode, and a liquid stored in the container, and (b) irradiating the first semiconductor photocatalyst layer with light to generate hydrogen on the counter electrode. The first conductive layer is interposed between the substrate and the first semiconductor photocatalyst layer. At least a part of the first semiconductor photocatalyst layer is in contact with the liquid. At least a part of the counter electrode is in contact with the liquid. The liquid is selected from the group consisting of an electrolyte aqueous solution and water. The substrate is formed of a resin.
    Type: Grant
    Filed: July 27, 2015
    Date of Patent: August 14, 2018
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Satoru Tamura, Kazuhito Hato, Takaiki Nomura, Takahiro Kurabuchi, Yoshihiro Kozawa, Ryousuke Kikuchi
  • Publication number: 20180216244
    Abstract: A photoelectrode (120) of the present disclosure includes: a substrate (121); a ZnO conductive film (122) which is provided on the substrate (121) and in which Zn is partially substituted by at least one element selected from Ga and Al; and a semiconductor film (123) which is provided on an opposite side of the substrate (121) with respect to the ZnO conductive film (122) and which is composed of a nitride or an oxynitride of at least one metal element selected from metal elements of groups 4A, 5A, 6A, and 3B.
    Type: Application
    Filed: June 14, 2016
    Publication date: August 2, 2018
    Inventors: Takaiki NOMURA, Takahiro ITO, Kazuhito HATO
  • Publication number: 20180209066
    Abstract: The present disclosure provides a rutile-type niobium oxynitride having a rutile-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure (100) including: a substrate (110) having at least one principal surface composed of a rutile-type compound having a rutile-type crystal structure; and a niobium oxynitride (for example, a rutile-type niobium oxynitride film (120)) grown on the one principal surface of the substrate (110), the niobium oxynitride having a rutile-type crystal structure and being represented by the chemical formula NbON.
    Type: Application
    Filed: July 21, 2016
    Publication date: July 26, 2018
    Inventors: Ryosuke KIKUCHI, Kazuhito HATO, Tetsuya HASEGAWA, Yasushi HIROSE
  • Publication number: 20180209065
    Abstract: The present disclosure provides an anatase-type niobium oxynitride having an anatase-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure (100) including: a substrate (110) having at least one principal surface composed of a perovskite-type compound having a perovskite-type crystal structure; and a niobium oxynitride (for example, an anatase-type niobium oxynitride film (120)) grown on the one principal surface of the substrate (110), the niobium oxynitride having an anatase-type crystal structure and being represented by the chemical formula NbON.
    Type: Application
    Filed: July 21, 2016
    Publication date: July 26, 2018
    Inventors: Ryosuke KIKUCHI, Toru NAKAMURA, Kazuhito HATO, Tetsuya HASEGAWA, Yasushi HIROSE
  • Publication number: 20180093251
    Abstract: The present invention provides a porous coordination polymer having high ability of storing a gas. The porous coordination polymer according to the present invention comprises zinc cluster ions and one kind of tricarboxylic acid ions selected from the group consisting of the following chemical formula (I), the following chemical formula (II), and the following chemical formula (III); where X represents a natural number of not less than 1 and not more than 3, wherein the tricarboxylic acid ions are bound to the zinc cluster ions as terdentate ligands.
    Type: Application
    Filed: July 28, 2017
    Publication date: April 5, 2018
    Inventors: TAKAIKI NOMURA, HIDEKI HATA, MOTOMASA YONEZUMI, KAZUHITO HATO, ATSUO OKAICHI
  • Patent number: 9926633
    Abstract: The present invention provides a method for generating hydrogen by water splitting at a higher hydrogen generation efficiency. In the present method, used is a photoelectrochemical cell comprising a container, a liquid stored in the container, a semiconductor electrode contained in the container, and a counter electrode contained in the container. The semiconductor electrode comprises a first semiconductor layer, a light-transmissive conductor layer; and a second semiconductor layer.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: March 27, 2018
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Ryosuke Kikuchi, Takaiki Nomura, Kazuhito Hato, Satoru Tamura, Takahiro Kurabuchi
  • Publication number: 20180036721
    Abstract: A method for manufacturing a photosemiconductor according to the present disclosure includes: forming an oxide on a base material, the oxide containing at least one kind of transition metal; and preparing a photosemiconductor containing the transition metal and a nitrogen element from the oxide by subjecting the oxide to a treatment with a plasma of a nitrogen-containing gas which is generated at a frequency in a VHF range under a pressure lower than atmospheric pressure.
    Type: Application
    Filed: July 11, 2017
    Publication date: February 8, 2018
    Inventors: HIDEAKI MURASE, KAZUHITO HATO
  • Publication number: 20180030602
    Abstract: The present invention provides a method for growing a strontium niobium oxynitride film, the method comprising: (a) growing, on a strontium titanate substrate, by a sputtering method, the strontium niobium oxynitride film having carrier density of not more than 1×1018 cm?3. The spirit of the present invention includes: (I) strontium niobium oxynitride having carrier density not more than 1×1018 cm?3, (II) a strontium niobium oxynitride film having carrier density not more than 1×1018 cm?3, (III) a photosemiconductor substrate comprising the strontium niobium oxynitride film, (IV) a hydrogen generation device comprising the photosemiconductor substrate, and (V) a hydrogen generation method using the photosemiconductor substrate. The present invention provides a fabrication method of a strontium niobium oxynitride film having small carrier density and its use.
    Type: Application
    Filed: June 20, 2017
    Publication date: February 1, 2018
    Inventors: RYOSUKE KIKUCHI, TORU NAKAMURA, KAZUHITO HATO
  • Publication number: 20170362716
    Abstract: The present invention provides a method for fabricating an electrode comprising a co-catalyst layer for splitting water with light. The method comprises steps of (a) forming a catalyst layer containing at least one selected from the group consisting of a niobium-containing oxynitride and a niobium-containing nitride on an electrically conductive principal surface of a substrate; (b) forming a transition metal oxide layer on the catalyst layer in an inert gas atmosphere containing oxidized gas impurities to provide a stacking structure comprising the substrate, the catalyst layer, and the transition metal oxide layer; (c) immersing the stacking structure in an electrolyte aqueous solution; and (d) applying a positive electric potential to the stacking structure in the electrolyte aqueous solution to convert the transition metal oxide layer into the co-catalyst layer. The present invention provides an electrode for water splitting having high water-splitting efficiency.
    Type: Application
    Filed: June 6, 2017
    Publication date: December 21, 2017
    Inventors: TAKAHIRO KURABUCHI, MISA YOROZUYA, KAZUHITO HATO, RYU ABE, MASANOBU HIGASHI, TAKAHIDE OTSUBO