Abstract: A surface acoustic wave device comprises a piezoelectric substrate and a plurality of electrode fingers which are located on the piezoelectric substrate along the propagation direction of a surface acoustic wave. The electrode fingers are located on the piezoelectric substrate at a pitch of about 1.5.lambda.o/2 (where a symbol .lambda.o indicates a wavelength of a surface acoustic wave with a frequency equivalent to the center frequency of the surface acoustic wave device). The width of each of the electrode fingers is about 1.5.lambda.o/4. The electrode fingers are located on the substrate so as to be electrically independent of an external circuit and each other.Since the width of electrode fingers is about 1.5.lambda.o/4, the surface acoustic wave device can be produced without fine processing techniques.

Abstract: Disclosed is a SAW filter employing a SAW resonator which is constructed of a plurality of pairs of electrode fingers formed on a piezoelectric substrate, and in which a plurality of SAW transmission spaces are included. The SAW transmission spaces do not have the function of exciting a SAW, and they have electric lengths which match the phases of SAWs excited by the resonator. In accordance with frequency characteristics required of the filter, such SAW transmission spaces are introduced into, for example, one of a plurality of SAW resonators located on the electric power input side of the filter.

Abstract: At least one electro-acoustic transducer of a first surface acoustic wave device and acousto-electric transducers of a second surface acoustic wave device are arranged symmetrically to the first surface acoustic wave device about a line parallel to a propagating direction of surface acoustic wave and is phase-weighted differently from the remaining transducers having common phase-weighting, to improve an attenuation for stop frequency.

Abstract: A surface acoustic wave device comprises a piezoelectric substrate and a plurality of electrode fingers which are located on the piezoelectric substrate along the progagation direction of a surface acoustic wave. The electrode fingers are located on the piezoelectric substrate at a pitch of about 1.5.lambda.o/2 (where a symbol .lambda.o indicates a wavelength of a surface acoustic wave with a frequency equivalent to the center frequency of the surface acoustic wave device). The width of each of the electrode fingers is about 1.5.lambda.o/4. The electrode fingers are located on the substrate so as to be electrically independent of an external circuit and each other.Since the width of electrode fingers is about 1.5.lambda.o/4, the surface acoustic wave device can be produced without fine processing techniques.

Abstract: A SAW resonator includes resonating SAW transducer units formed on a piezoelectric substrate and juxtaposed in a direction of propagation of acoustic waves, and a unidirectionally reflecting SAW transducer unit provided in each end of the juxtaposed resonating SAW transducer units on the substrate. Each resonating SAW transducer unit includes first and second SAW transducers connected in series and/or in parallel with each other.

Abstract: A surface acoustic wave device has its inter--digital transducers made of a 3--metal alloyed material consisting of aluminum, copper and magnesium.

Abstract: This invention relates to the structure of a band-pass or band-rejection filters by combining a plurality of one-port surface acoustic wave resonators whose interdigital electrode fingers are disposed on a piezoelectric substrate. The filter combining surface acoustic wave resonators of the present invention consists of a series circuit of the one-port surface acoustic wave resonators disposed on a piezoelectric substrate for transmitting elastic surface wave and a plurality of circuit elements containing capacitance elements, and one-port surface acoustic wave resonators disposed between the electrodes of the plurality of circuit elements and the common ground. This structure can accomplish a filter having a low loss, high power handling capability and high design freedom of rejection- and passing-band.