Abstract: A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, wherein the p-type semiconductor layer contains silicon atoms and nitrogen atoms, which is possible to improve photoelectric conversion efficiency.

Abstract: A power control system includes a distribution unit distributing power supplied from a power system to a plurality of power demanding facilities, and a measurement unit measuring a value of running power between the power system and the distribution unit. A power control instruction is transmitted to a power demanding facility in the event of the condition of TLP<K1 (K1 indicates a threshold value used to detect reverse power flow) is established when the running power flowing from the power system towards the distribution unit is taken as a positive value. The power control instruction instructs a power storage device performing a discharging process to suppress the amount of power supplied in the direction towards the power system, and instructs a power storage device currently performing a charging process to increase the amount of power charged in a corresponding storage battery.

Abstract: A deposition apparatus includes: a first electrode for placing a processing object; a second electrode for generating plasma with the first electrode, the second electrode being opposed to the first electrode; and a heat flow control heat transfer part for drawing heat from the processing object to generate a heat flow from a central area to a peripheral area of the processing object.

Abstract: A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, wherein the p-type semiconductor layer contains silicon atoms and nitrogen atoms, which is possible to improve photoelectric conversion efficiency.

Abstract: The present invention aims to suppress calorific value and prolong a lifetime of an apparatus that generates soft X-rays. Thus, the present invention provides a static elimination apparatus that includes an emitter as an electron emitting portion and a target, in which a thin film formed of diamond particles each having a particle size of 2 nm to 100 nm is formed on a surface of the emitter. The thin film has a diamond XRD pattern in an XRD measurement and, in a Raman spectroscopic measurement, a ratio of an sp3 bonding component to an sp2 bonding component within the film of 2.5 to 2.7:1. When a DC voltage is applied to the emitter, with a threshold electric field intensity of 1 V/?m or less, electrons larger in number than the prior art are emitted from the emitter and moreover, a temperature of the emitter is hardly increased, thus obtaining a longer lifetime.

Abstract: A method of manufacturing a field emission electrode includes humidification processing to absorb water at a surface of an electron emission film emitting electrons as a result of application of a voltage, and voltage application processing to apply an aging voltage between the humidified electron emission film and an electrode provided facing the electron emission film.

Abstract: An electric power supply system is provided for feeding an output of a DC power source to a load at high efficiency and, without complicated controlling, for allowing for interchange of electric power among a commercial power system, a DC power source and a load. An electric power supply system includes a DC bus line for connecting a DC generator, a load and system power. The electric power supply system comprises a DC/DC converter connected between the DC generator and the DC bus line for controlling an output voltage to the DC bus line at a voltage V1; an inverter connected between the system power and the DC bus line for operating a control in response to an input voltage V2 from the DC bus line; and an AC/DC converter connected between the system power and the DC bus line for controlling an output voltage to the DC bus line at a voltage V3, wherein the respective voltages are set as V1>V2>V3.

Abstract: An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5 nm to 10 nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.

Abstract: An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5 nm to 10 nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.

Abstract: A secondary battery protection circuit has: a first switch that permits or inhibits charging of a secondary battery by switching a charge conductor between a conducting and a non-conducting state; a voltage detection portion that monitors the voltage of the secondary battery to output an error signal when the voltage is an overvoltage; and a first current path that has one end connected to the positive-side conductor and the other end connected to the negative-side conductor, and through which a current corresponding to the supplied electric power passes. The first current path, other than during charging of the secondary battery, is kept in a non-conducting state and, when the error signal is outputted while the first current path is in a conducting state, is irreversibly brought into a non-conducting state by a current of a predetermined amount or more passing therethrough.

Abstract: A power supply apparatus converting electric power stored in a first power storage unit into a prescribed voltage for supply to a load includes: a power storage unit-side terminal coupled to the first power storage unit; a second power storage unit; a load-side terminal coupled to the load; a converter unit for increasing output voltage of the first power storage unit to a first voltage and outputting the first voltage to the load-side terminal at a time of discharging of the first power storage unit; a step-up circuit for increasing the output voltage of the first power storage unit and supplying the increased voltage to the second power storage unit; and a backflow prevention circuit arranged between the second power storage unit and the load-side terminal to allow current to flow from the second power storage unit to the load-side terminal and block current flowing from the load-side terminal to the second power storage unit.

Abstract: The present invention aims to suppress calorific value and prolong a lifetime of an apparatus that generates soft X-rays. Thus, the present invention provides a static elimination apparatus that includes an emitter as an electron emitting portion and a target, in which a thin film formed of diamond particles each having a particle size of 2 nm to 100 nm is formed on a surface of the emitter. The thin film has a diamond XRD pattern in an XRD measurement and, in a Raman spectroscopic measurement, a ratio of an sp3 bonding component to an sp2 bonding component within the film of 2.5 to 2.7:1. When a DC voltage is applied to the emitter, with a threshold electric field intensity of 1 V/?m or less, electrons larger in number than the prior art are emitted from the emitter and moreover, a temperature of the emitter is hardly increased, thus obtaining a longer lifetime.

Abstract: A reliable power conditioner in a system having three power sources: a direct-current power source such as a solar cell, an accumulating unit such as an accumulator, and a commercial power system.

Abstract: A deposition apparatus includes: a first electrode for placing a processing object; a second electrode for generating plasma with the first electrode, the second electrode being opposed to the first electrode; and a cooling part for cooling the processing object, wherein between the processing object and the cooling part, as compared with a thermal resistance between a central part of the processing object and the cooling part, a thermal resistance between a peripheral part peripheral to the central part and the cooling part is small.

Abstract: A deposition apparatus includes: a first electrode for placing a processing object; a second electrode for generating plasma with the first electrode, the second electrode being opposed to the first electrode; and a heat flow control heat transfer part for drawing heat from the processing object to generate a heat flow from a central area to a peripheral area of the processing object.

Abstract: During charging operations of a power storage unit, a voltage converting unit converts a voltage received from direct-current buses and supplies it to power storage unit, whereas during discharging operations of power storage unit, voltage converting unit converts a voltage received from power storage unit and outputs it to direct-current buses. In voltage converting unit, a side connected to power storage unit and a side connected to direct-current buses are insulated from each other. As a result of this, if a ground failure occurs in power storage unit, its effects on an inverter circuit, a commercial power system and the like are prevented. A grid-connected power conditioner with high safety can thus be obtained.

Abstract: A method of manufacturing a field emission electrode includes humidification processing to absorb water at a surface of an electron emission film emitting electrons as a result of application of a voltage, and voltage application processing to apply an aging voltage between the humidified electron emission film and an electrode provided facing the electron emission film.

Abstract: A plasma CVD apparatus includes a first electrode which is disposed in a reacting furnace and on which a substrate is mounted, a second electrode that is disposed above and opposite the first electrode and generates plasma with the first electrode, and a first gas supply nozzle that is disposed at a height between a height of the first electrode in the reacting furnace and a height of the second electrode, and has a plurality of ejection ports formed and arranged in such a way as to surround an area between the first electrode and the second electrode where plasma is generated.

Abstract: The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group IIIb element into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.

Abstract: A substrate is mounted on a mount surface of an anode in a chamber. A flow path is formed in a cathode facing the anode, and cooling water is circulated therethrough. A voltage is applied across the anode and the cathode to form a layer of carbon nanowall on the substrate by plasma, and thereafter the anode is cooled by a cooling member to rapidly cool the substrate to a predetermined temperature.