Patents by Inventor Kazuhlko Shimakawa

Kazuhlko Shimakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT
    Publication number: 20090283736
    Abstract: A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0<x<2.5) and a second region comprising a second oxygen-deficient tantalum oxide having a composition represented by TaOy (x<y<2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer.
    Type: Application
    Filed: March 26, 2008
    Publication date: November 19, 2009
    Inventors: Yoshihiko Kanzawa, Koji Katayama, Satoru Fujii, Shunsaku Muraoka, Koichi Osano, Satoru Mitani, Ryoko Miyanaga, Takeshi Takagi, Kazuhlko Shimakawa