Patents by Inventor Kazuho Sone

Kazuho Sone has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6451184
    Abstract: A thin film forming apparatus comprises a substrate holding means for holding a substrate, a target holding means for holding a target, a sputter gas supplying means for supplying into a reaction chamber a sputter gas for sputtering the target, a reactive gas supplying means for supplying a reactive gas, and power supplying means for supplying a power for generating a discharge to take place between the target and the substrate, wherein a partition member having a plurality of openings is provided between the target and the substrate, and a sputter gas is supplied to a space formed between the target and the partition member and a reactive gas is supplied to a space formed between the substrate and the partition member.
    Type: Grant
    Filed: February 18, 1998
    Date of Patent: September 17, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventor: Kazuho Sone
  • Patent number: 6238527
    Abstract: A film forming apparatus for forming a minute thin film at a high depositing rate, which comprises a substrate holding means for holding a substrate, a target holding means for holding a target, a gas supply means for supplying a sputtering gas for sputtering the target into a reaction chamber, and an electric power supply means for supplying an electric power for causing an electric discharge between the target and the substrate, wherein a partition member having a plurality of openings provided between the target and the substrate, and wherein means for supplying a reaction gas and a microwave are provided in a space between the partition member and the substrate.
    Type: Grant
    Filed: September 30, 1998
    Date of Patent: May 29, 2001
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazuho Sone, Nobumasa Suzuki
  • Patent number: 6200431
    Abstract: To form a large-area thin film having in-plane uniform thickness and optical and electrical characteristics at a high deposition rate, a reactive sputtering apparatus is provided which comprises a substrate holding means for holding a substrate, a target holding means for holding a target, a sputter gas supplying means for supplying into a reaction chamber a sputter gas for sputtering the target, a reactive gas supplying means for supplying a reactive gas, and a power supplying means for supplying a power for causing a discharge to take place between the target and the substrate, wherein a partition member having a plurality of openings is provided between the target and the substrate, and wherein a supply port and an exhaust passage both for the sputter gas and a supply port and an exhaust passage both for the reactive gas are provided separately from each other such that the sputter gas is applied to and exhausted from a space between the target and the partition member and the reactive gas is applied to an
    Type: Grant
    Filed: February 18, 1998
    Date of Patent: March 13, 2001
    Assignee: Canon Kabushiki Kaisha
    Inventor: Kazuho Sone