Abstract: A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film.

Abstract: A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film.

Abstract: A processing gas fed from a gas feed pipe (8) through a gas introducing port (9) flows first into an outer annular gas flow channel (20a), where it is circumferentially diffused, and then into an inner annular gas flow channel (20b) via a passageway (23), and from this inner annular gas flow channel (20b) it flows into a gas diffusion gap (7) in the back surface of a shower head (6) via a gas feed hole 25. Thereafter, the processing gas is diffused in the gas diffusion gap (7) and delivered from gas delivery holes (5) to a semiconductor wafer (W). This makes it possible to improve the uniformity of in-plane process, as compared with the prior art, and to make a uniform process.

Abstract: A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film.

Abstract: A processing gas fed from a gas feed pipe (8) through a gas introducing port (9) flows first into an outer annular gas flow channel (20a), where it is circumferentially diffused, and then into an inner annular gas flow channel (20b) via a passageway (23), and from this inner annular gas flow channel (20b) it flows into a gas diffusion gap (7) in the back surface of a shower head (6) via a gas feed hole 25. Thereafter, the processing gas is diffused in the gas diffusion gap (7) and delivered from gas delivery holes (5) to a semiconductor wafer (W). This makes it possible to improve the uniformity of in-plane process, as compared with the prior art, and to make a uniform process.

Abstract: A substrate mounting table includes a mounting table main body whose top surface and side surface are covered with an upper cover member. Surface treatment is performed partially to a substrate surrounding region disposed outside a substrate mounting region on a top surface of the upper cover member, so that the substrate surrounding region is smoother than the substrate mounting region. The substrate mounting region is covered by a wafer when the wafer is mounted thereon. Thus, for instance, a metal component generated upon removal of a metal oxide film from the substrate is not easily adhered on the mounting table, and is easily removed if adhered.

Abstract: A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film.

Abstract: A processing gas fed from a gas feed pipe (8) through a gas introducing port (9) flows first into an outer annular gas flow channel (20a), where it is circumferentially diffused, and then into an inner annular gas flow channel (20b) via a passageway (23), and from this inner annular gas flow channel (20b) it flows into a gas diffusion gap (7) in the back surface of a shower head (6) via a gas feed hole 25. Thereafter, the processing gas is diffused in the gas diffusion gap (7) and delivered from gas delivery holes (5) to a semiconductor wafer (W). This makes it possible to improve the uniformity of in-plane process, as compared with the prior art, and to make a uniform process.

Abstract: A processing apparatus includes a susceptor provided in a processing chamber and having an upper surface with a support area on which a semiconductor wafer is placed, and an aligning ring member movably arranged on the upper surface of the susceptor to surround the support area, the ring member defining the shift of the wafer placed on the support area and formed of a material having a thermal expansion coefficient smaller than that of the susceptor. A plurality of projections are provided on the peripheral portion of the upper surface of the susceptor at intervals along the ring member. A plurality of slots are provided in the aligning ring member for receiving the corresponding projections. The slots permit relative movement of the projection received therein in a radial direction of the ring member, but prohibit relative movement of the projections received therein in a rotating direction of the ring member as a whole.

Abstract: A processing apparatus includes a susceptor provided in a processing chamber and having an upper surface with a support area on which a semiconductor wafer is placed, and an aligning ring member movably arranged on the upper surface of the susceptor to surround the support area, the ring member defining the shift of the wafer placed on the support area and formed of a material having a thermal expansion coefficient smaller than that of the susceptor. A plurality of projections are provided on the peripheral portion of the upper surface of the susceptor at intervals along the ring member. A plurality of slots are provided in the aligning ring member for receiving the corresponding projections. The slots permit relative movement of the projection received therein in a radial direction of the ring member, but prohibit relative movement of the projections received therein in a rotating direction of the ring member as a whole.

Abstract: The inside of a vacuum pump is heated by means of a first heating unit to a temperature higher than the temperature at which products of reaction discharged from a process chamber are separated, and the inner surface of an exhaust pipe is heated to a temperature higher than the separation temperature by means of a second heating unit. If a vacuum process is carried out in the process chamber in this state, exhaust gas discharged from the process chamber can pass in a gaseous phase through the exhaust pipe and the vacuum pump without separating its unwanted by-products. Since a trap unit is located on the downstream side of the vacuum pump, moreover, the reaction products and the like can be prevented from adhering to the inside of the vacuum pump so that the maintenance operation is easier, although the conductance of the exhaust pipe is lowered so that the trap unit and the vacuum pump can be reduced in size.

Abstract: The trap apparatus of the present invention includes a case provided for a gas exhaust system used for a film forming equipment which carries out a film forming process on an object, a gas supply port, made in the case and connected to an exhaust pipe of the gas exhaust system, for introducing an exhaust gas flowing through the exhaust pipe, into the case, a gas exhaust port, made in the case and connected to an exhaust pipe of the gas exhaust system, for exhausting the exhaust gas flowing through an inner space of the case, to the exhaust pipe, a plurality of partition plates arranged in the case so as to partition the inner space of the case into a plurality of rooms between the gas supply port and the gas exhaust port, a gas distribution port provided in some of the partition plates such that the exhaust gas introduced into the case through the gas supply port, is allowed to flow through the rooms partitioned by the partition plates, in the order, and then exhausted from the gas exhaust port, a trap mechan

Abstract: A film forming apparatus includes a chamber in which a thin film is formed on a semiconductor wafer by supplying a process gas, the interior of which is then cleaned by a cleaning gas, while the gas in the chamber is exhausted by a vacuum system.

Abstract: A first pre-coating film forming gas containing titanium is supplied into a process chamber in which a susceptor for supporting a wafer is located, at the same time heating the susceptor to thereby form, on the susceptor, a first pre-coating film containing titanium as a main component, and then a second pre-coating film forming gas containing titanium and nitrogen is supplied into the process chamber to thereby form, on the pre-coating first film, a second pre-coating film containing titanium nitride as a main component. The wafer is mounted on a part of the second pre-coating film susceptor. A first film forming gas containing titanium is supplied into the process chamber, at the same time heating the susceptor to thereby form, on the wafer, a first film containing titanium as a main component, and then a second film forming gas containing titanium and nitrogen is supplied into the process chamber to thereby form, on the first film on the wafer, a second film containing titanium nitride as a main component.

Abstract: The trap apparatus of the present invention includes a case provided for a gas exhaust system used for a film forming equipment which carries out a film forming process on an object, a gas supply port, made in the case and connected to an exhaust pipe of the gas exhaust system, for introducing an exhaust gas flowing through the exhaust pipe, into the case, a gas exhaust port, made in the case and connected to an exhaust pipe of the gas exhaust system, for exhausting the exhaust gas flowing through an inner space of the case, to the exhaust pipe, a plurality of partition plates arranged in the case so as to partition the inner space of the case into a plurality of rooms between the gas supply port and the gas exhaust port, a gas distribution port provided in some of the partition plates such that the exhaust gas introduced into the case through the gas supply port, is allowed to flow through the rooms partitioned by the partition plates, in the order, and then exhausted from the gas exhaust port, and a trap me

Abstract: The inside of a vacuum pump is heated by means of a first heating unit to a temperature higher than the temperature at which products of reaction discharged from a process chamber are separated, and the inner surface of an exhaust pipe is heated to a temperature higher than the separation temperature by means of a second heating unit. If a vacuum process is carried out in the process chamber in this state, exhaust gas discharged from the process chamber can pass in a gaseous phase through the exhaust pipe and the vacuum pump without separating its unwanted by-products.