Abstract: THz device includes: a semiconductor substrate; a first semiconductor layer disposed on the semiconductor substrate; an active element formed by being laminated on the first semiconductor layer; a second electrode connected to the first semiconductor layer to be connected to a cathode K of the active element, the second electrode disposed on the semiconductor substrate; a first electrode connected to an anode A of the active element, the first electrode disposed on the semiconductor substrate to be opposite to the second electrode; a rear reflector metal layer disposed on a back side surface of the semiconductor substrate opposite to the first semiconductor layer, wherein the active element forms a resonator between the second and first electrodes, wherein electromagnetic waves are reflected on the rear reflector metal layer, and electromagnetic waves have a surface light-emission radiating pattern or surface light-receiving pattern in a vertical direction to the semiconductor substrate.

Abstract: The THz device module includes: a substrate; a THz device disposed on a front side surface of the substrate, and configured to oscillate or detect THz waves; a cap covering the THz device being separated from the THz device, and comprising an opening formed at a position opposite to the THz device in a vertical direction of the front side surface of the substrate; and a sealing member covering the opening of the cap so as to seal the THz device in conjunction with the substrate and the cap. A distance from the THz device to the sealing member is within a near-field pattern to which an electric field of the THz waves can be reached without interruption from a surface of the THz device to the sealing member. The THz device module efficiently emits or detects THz waves from the opening, thereby suppressing upsizing of the cap.

Abstract: The THz device module includes: a substrate; a THz device disposed on a front side surface of the substrate, and configured to oscillate or detect THz waves; a cap covering the THz device being separated from the THz device, and comprising an opening formed at a position opposite to the THz device in a vertical direction of the front side surface of the substrate; and a sealing member covering the opening of the cap so as to seal the THz device in conjunction with the substrate and the cap. A distance from the THz device to the sealing member is within a near-field pattern to which an electric field of the THz waves can be reached without interruption from a surface of the THz device to the sealing member. The THz device module efficiently emits or detects THz waves from the opening, thereby suppressing upsizing of the cap.

Abstract: A reflective detection device, includes: oscillation element oscillating a terahertz wave; exit part from which the terahertz wave exits; incident part to which the terahertz wave reflected from a detection target is incident; and detection element detecting the terahertz wave incident to the incident part, wherein the exit part and the incident part are disposed on one side in first direction and are spaced apart from each other in second direction with respect to the detection target, the terahertz wave exiting from the exit part travels to propagate from the exit part toward the incident part in the second direction along a direction toward the detection object in the first direction, and the terahertz wave incident to the incident part travels to propagate from the exit part toward the incident part in the second direction along a direction away from the detection target in the first direction.

Abstract: THz device includes: a semiconductor substrate; a first semiconductor layer disposed on the semiconductor substrate; an active element formed by being laminated on the first semiconductor layer; a second electrode connected to the first semiconductor layer to be connected to a cathode K of the active element, the second electrode disposed on the semiconductor substrate; a first electrode connected to an anode A of the active element, the first electrode disposed on the semiconductor substrate to be opposite to the second electrode; a rear reflector metal layer disposed on a back side surface of the semiconductor substrate opposite to the first semiconductor layer, wherein the active element forms a resonator between the second and first electrodes, wherein electromagnetic waves are reflected on the rear reflector metal layer, and electromagnetic waves have a surface light-emission radiating pattern or surface light-receiving pattern in a vertical direction to the semiconductor substrate.

Abstract: A THz device includes: an antenna electrode capable of transmitting and receiving a THz wave to free space; first transmission lines capable of transmitting the THz wave, the first transmission lines respectively connected to the antenna electrodes; an active element of which a main electrode is connected to each of the first transmission lines; second transmission lines capable of transmitting the THz wave, the second transmission lines connected to the first active device; pad electrodes respectively connected to the second transmission lines; and a low-pass filter with respect to the THz wave, the low-pass filter connected to the pad electrodes, wherein impedance matching of between the antenna electrode and the active element is performed by an impedance conversion of the first transmission lines. The THz device is capable of the high-efficiency matching between the active element and the antenna due to the impedance conversion effect of the transmission line.

Abstract: The THz-wave device comprises: a 2D-PC slab; lattice points periodically arranged in the 2D-PC slab, the lattice points for diffracting the THz waves in PBG frequencies of photonic band structure of the 2D-PC slab in order to prohibit existence in a plane of the 2D-PC; a 2D-PC waveguide disposed in the 2D-PC slab and formed with a line defect of the lattice points; and an RTD device disposed on the 2D-PC waveguide.

Abstract: The THz-wave device comprises: a 2D-PC slab; lattice points periodically arranged in the 2D-PC slab, the lattice points for diffracting the THz waves in PBG frequencies of photonic band structure of the 2D-PC slab in order to prohibit existence in a plane of the 2D-PC; a 2D-PC waveguide disposed in the 2D-PC slab and formed with a line defect of the lattice points; and an RTD device disposed on the 2D-PC waveguide.