Patents by Inventor Kazuki Fukatsu

Kazuki Fukatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10361027
    Abstract: A step-up transformer, an oscillator, and an ignition plug are comprised. The step-up transformer has a primary winding, a secondary winding, and a core. The ignition plug is connected to a first end of the secondary winding. A gap is formed in the core. The step up transformed is provided with a shielding part which is made of a conductive material and shields the magnetic flux leaking from the gap. A second end of the secondary winding is electrically connected to the shielding part.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: July 23, 2019
    Assignee: DENSO CORPORATION
    Inventors: Shota Kinoshita, Kazuki Fukatsu, Fumiaki Aoki, Akimitsu Sugiura
  • Publication number: 20190057808
    Abstract: A step-up transformer, an oscillator, and an ignition plug are comprised. The step-up transformer has a primary winding, a secondary winding, and a core. The ignition plug is connected to a first end of the secondary winding. A gap is formed in the core. The step up transformed is provided with a shielding part which is made of a conductive material and shields the magnetic flux leaking from the gap. A second end of the secondary winding is electrically connected to the shielding part.
    Type: Application
    Filed: December 20, 2016
    Publication date: February 21, 2019
    Inventors: Shota KINOSHITA, Kazuki FUKATSU, Fumiaki AOKI, Akimitsu SUGIURA
  • Patent number: 8552651
    Abstract: In a high frequency plasma generation system, a magnetic resonance section is provided as a frequency multiplier section between a discharge circuit and a power booster circuit. The magnetic resonance section extracts from a fundamental wave of a predetermined frequency generated by a frequency generator higher harmonic components, which are multiplied waves of the predetermined frequency and as high as two or more integer times of the fundamental wave. A resonance frequency of the power booster circuit and a first resonance coil is set to be equal to the frequency of the multiplied wave and match to equal a resonance frequency of the discharge circuit and a second resonance coil of the magnetic resonance section when a discharge electrode and a ground electrode are in a predetermined pressure range.
    Type: Grant
    Filed: August 14, 2012
    Date of Patent: October 8, 2013
    Assignees: Nippon Soken, Inc., Denso Corporation
    Inventors: Masayoshi Sugino, Kazuki Fukatsu, Yoshitaka Tomita, Masamichi Shibata, Yuya Abe
  • Publication number: 20130049593
    Abstract: In a high frequency plasma generation system, a magnetic resonance section is provided as a frequency multiplier section between a discharge circuit and a power booster circuit. The magnetic resonance section extracts from a fundamental wave of a predetermined frequency generated by a frequency generator higher harmonic components, which are multiplied waves of the predetermined frequency and as high as two or more integer times of the fundamental wave. A resonance frequency of the power booster circuit and a first resonance coil is set to be equal to the frequency of the multiplied wave and match to equal a resonance frequency of the discharge circuit and a second resonance coil of the magnetic resonance section when a discharge electrode and a ground electrode are in a predetermined pressure range.
    Type: Application
    Filed: August 14, 2012
    Publication date: February 28, 2013
    Applicants: DENSO CORPORATION, NIPPON SOKEN, INC.
    Inventors: Masayoshi SUGINO, kazuki Fukatsu, Yoshitaka Tomita, Masamichi Shibata, Yuya Abe
  • Patent number: 8050064
    Abstract: A surge voltage target setting unit obtains a main circuit power supply voltage of a semiconductor power conversion device based on an inter-terminal voltage of a semiconductor switching element detected by a voltage detection unit, and sets a control target of a surge voltage in accordance with the obtained main circuit power supply voltage. An active gate control unit, when the semiconductor switching element is turned off, sets a quantity of voltage modification so as to modify a gate voltage in a direction raising the gate voltage, that is, in a direction lowering a turn-off speed, based on feedback of the inter-terminal voltage, when the inter-terminal voltage exceeds the control target.
    Type: Grant
    Filed: February 13, 2008
    Date of Patent: November 1, 2011
    Assignees: Toyota Jidosha Kabushiki Kaisha, Denso Corporation, Nippon Soken, Inc.
    Inventors: Hiromichi Kuno, Satoshi Hirose, Naoyoshi Takamatsu, Hiroya Tsuji, Hiroyuki Sakakibara, Kazuki Fukatsu
  • Publication number: 20100008113
    Abstract: A surge voltage target setting unit (103) obtains a main circuit power supply voltage (VH) of a semiconductor power conversion device based on an inter-terminal voltage (Vce) of a semiconductor switching element (100) detected by a voltage detection unit (102), and sets a control target (Vm) of a surge voltage in accordance with the obtained main circuit power supply voltage. An active gate control unit (71), when the semiconductor switching element (100) is turned off, sets a quantity of voltage modification (V1) so as to modify a gate voltage (Vg) in a direction raising the gate voltage (Vg), that is, in a direction lowering a turn-off speed, based on feedback of the inter-terminal voltage (Vce), when the inter-terminal voltage (Vce) exceeds the control target (Vm).
    Type: Application
    Filed: February 13, 2008
    Publication date: January 14, 2010
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATION, NIPPON SOKEN, INC
    Inventors: Hiromichi Kuno, Satoshi Hirose, Naoyoshi Takamatsu, Hiroya Tsuji, Hiroyuki Sakakibara, Kazuki Fukatsu