Abstract: An oxynitride phosphor powder has a fluorescence peak wavelength of 587 to 630 nm and a high external quantum efficiency. A method of producing the oxynitride phosphor powder containing Li at 50 to 10,000 ppm includes mixing silicon nitride powder, a substance serving as an aluminum source, a substance serving as a calcium source and a substance serving as an europium source; firing the mixture at 1500 to 2000° C. in an inert gas atmosphere or a reducing gas atmosphere to obtain a fired oxynitride phosphor composed mainly of Ca-containing ?-SiAlON, as an intermediate; and heat treating the fired oxynitride phosphor at a temperature of 1450° C. to less than the firing temperature, in an inert gas atmosphere or in a reducing gas atmosphere in the presence of Li.

Abstract: An (oxy)nitride phosphor powder has a fluorescence peak wavelength of 610 to 625 nm and also has higher external quantum efficiency than the conventional one. The (oxy)nitride phosphor powder includes an ?-type SiAlON and aluminum nitride, represented by the compositional formula: Cax1Eux2Si12?(y+z)Al(y+z)OzN16?z wherein x1, x2, y, z fulfill the following formulae: 1.60?x1+x2?2.90, 0.18?x2/x1?0.70, 4.0?y?6.5, 0.0?z?1.0. The powder can additionally contain Li in an amount of 50 to 10000 ppm. The content of the aluminum nitride may be more than 0 mass % to less than 33 mass %.

Abstract: An oxynitride phosphor powder is an ?-SiAlON phosphor having a dominant wavelength of 565-577 nm and fluorescence intensity and external quantum efficiency that are high enough for practical use. The oxynitride phosphor powder comprises an ?-SiAlON represented by the compositional formula: Cax1Eux2Ybx3Si12?(y+z)Al(y+z)OzN16?z (wherein 0.0<x1?2.0, 0.0000<x2?0.0100, 0.0000<x3?0.0100, 0.4?x2/x3?1.4, 1.0?y?4.0, 0.5?z?2.0).

Abstract: A method of manufacturing a wavelength conversion member including a polycrystalline ceramics includes mixing a substance serving as a silicon source, a substance serving as an aluminum source, a substance serving as a calcium source, and a substance serving as a europium source; firing the obtained mixture to obtain an oxynitride phosphor powder; then sintering the oxynitride phosphor powder in an inert atmosphere to obtain the polycrystalline ceramics, characterized in that the sintered oxynitride phosphor powder has a composition (excluding oxygen) represented by the Formula: Cax1Eux2Si12-(y+z)Al(y+z)OzN16-z (in the Formula, x1, x2, y, and z are values such that 0<x1?3.40, 0.05?x2?0.20, 3.5?y?7.0, 0?z?1).

Abstract: An oxynitride phosphor powder has a fluorescence peak wavelength of 587 to 630 nm and a high external quantum efficiency. A method of producing the oxynitride phosphor powder containing Li at 50 to 10,000 ppm includes mixing silicon nitride powder, a substance serving as an aluminum source, a substance serving as a calcium source and a substance serving as an europium source; firing the mixture at 1500 to 2000° C. in an inert gas atmosphere or a reducing gas atmosphere to obtain a fired oxynitride phosphor composed mainly of Ca-containing ?-SiAlON, as an intermediate; and heat treating the fired oxynitride phosphor at a temperature of 1450° C. to less than the firing temperature, in an inert gas atmosphere or in a reducing gas atmosphere in the presence of Li.

Abstract: An oxynitride phosphor powder includes an ?-sialon fluorescent body having a fluorescent peak wavelength of 605-615 nm, and the external quantum efficiency of the oxynitride phosphor powder is greater than the conventional art. The oxynitride phosphor powder includes an ?-sialon represented by the formula Cax1Eux2Si12-(y+z)Al(y+z)OzN16-z (where x1, x2, y, and z satisfy the expressions 1.10?x1+x2?1.70, 0.18?x2/x1?0.47, and 2.6?y?3.6, 0.0?z?1.0).

Abstract: An oxynitride phosphor powder is an ?-SiAlON phosphor having a dominant wavelength of 565-577 nm and fluorescence intensity and external quantum efficiency that are high enough for practical use. The oxynitride phosphor powder comprises an ?-SiAlON represented by the compositional formula: Cax1Eux2Ybx3Si12-(y+z)Al(y+z)OzN16-z (wherein 0.0<x1?2.0, 0.0000<x2?0.0100, 0.0000<x3?0.0100, 0.4?x2/x3?1.4, 1.0?y?4.0, 0.5?z?2.0).

Abstract: An oxynitride phosphor powder has a fluorescence peak wavelength of 610 to 625 nm and also has higher external quantum efficiency than the conventional one. The oxynitride phosphor powder includes an ?-type SiAlON and aluminum nitride, represented by the compositional formula: Cax1Eux2Si12?(y+z)Al(y+z)OzN16?z wherein x1, x2, y, z fulfill the following formulae: 1.60?x1+x2?2.90, 0.18?x2/x1?0.70, 4.0?y?6.5, 0.0?z?1.0. The powder can additionally contain Li in an amount of 50 to 10000 ppm. The content of the aluminum nitride may be more than 0 mass % to less than 33 mass %.

Abstract: A nitride phosphor includes a (Ca,Sr)AlSiN3:Eu phosphor, of which the chemical composition can be controlled easily and which has excellent fluorescent properties. A method produces a nitride phosphor represented by the formula: (Ca1-x1-x2Srx1Eux2)aAlbSicN2a/3+b+4/3c (wherein 0.49<x1<1.0, 0.0<x2<0.02, 0.9?a?1.1, 0.9?b?1.1, 0.9?c?1.1). In the method, a silicon nitride powder is used as a raw material, wherein the silicon nitride powder has a specific surface area of 5 to 35 m2/g and also has such a property that the FS/FSO ((m2/g)/(mass %)) ratio is 8 to 53 and the FS/FIO ((m2/g)/(mass %)) ratio is 20 or more.

Abstract: A method of manufacturing a wavelength conversion member including a polycrystalline ceramics includes mixing a substance serving as a silicon source, a substance serving as an aluminum source, a substance serving as a calcium source, and a substance serving as a europium source; firing the obtained mixture to obtain an oxynitride phosphor powder; then sintering the oxynitride phosphor powder in an inert atmosphere to obtain the polycrystalline ceramics, characterized in that the sintered oxynitride phosphor powder has a composition (excluding oxygen) represented by the Formula: Cax1Eux2Si12-(y+z)Al(y+z)OzN16-z (in the Formula, x1, x2, y, and z are values such that 0<x1?3.40, 0.05?x2?0.20, 3.5?y?7.0, 0?z?1).

Abstract: A thin-film piezoelectric resonator including a substrate (6); a piezoelectric layer (2), a piezoelectric resonator stack (12) with a top electrode (10) and bottom electrode (8), and a cavity (4). The piezoelectric resonator stack (12) has a vibration region (40) where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region.

Abstract: A thin-film piezoelectric resonator including a substrate (6); a piezoelectric layer (2), a piezoelectric resonator stack (12) with a top electrode (10) and bottom electrode (8), and a cavity (4). The piezoelectric resonator stack (12) has a vibration region (40) where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region.

Abstract: A thin film piezoelectric resonator suppresses deterioration of impedance at antiresonant frequency and has a high Q value. The thin film piezoelectric resonator is provided with a semiconductor substrate (8); an insulating layer (6) formed on the semiconductor substrate (8) in contact with the surface of the semiconductor substrate; and a piezoelectric resonator stack (14) formed above the insulating layer and having a lower electrode (10), a piezoelectric layer (2) and an upper electrode (12) in this order from the insulating layer side. An oscillation space (4) is formed corresponding to an oscillation region where the lower electrode (10) and the upper electrode (12) of the piezoelectric resonator stack (14) overlap each other in the thickness direction. The fixed charge density in the insulating layer (6) is 1×1011 cm?2 or less. At the time of manufacturing the thin film piezoelectric resonator, the insulating layer is formed in contact with the semiconductor substrate and then, heat treatment at 300° C.

Abstract: Provided is a thin film piezoelectric resonator which includes a piezoelectric resonator stack (12) having a piezoelectric layer (2), an upper electrode (10) and a lower electrode (8); and a substrate (6) which supports the piezoelectric resonator stack. The piezoelectric resonator stack (12) is provided with a vibration region (18) wherein the upper electrode (10) and the lower electrode (8) face each other through a piezoelectric layer (2) and primary thickness vertical vibration can be performed; and a supporting region (19) supported by the substrate (6). The vibration region (18) has an oval shape with a ratio a/b of 1.1 or more but not more than 1.7, where (a) is a long diameter and (b) is a short diameter. The piezoelectric resonator stack (12) is further provided with an upper dielectric layer (20) formed on the upper electrode (10).

Abstract: A thin film piezoelectric resonator suppresses deterioration of impedance at antiresonant frequency and has a high Q value. The thin film piezoelectric resonator is provided with a semiconductor substrate (8); an insulating layer (6) formed on the semiconductor substrate (8) in contact with the surface of the semiconductor substrate; and a piezoelectric resonator stack (14) formed above the insulating layer and having a lower electrode (10), a piezoelectric layer (2) and an upper electrode (12) in this order from the insulating layer side. An oscillation space (4) is formed corresponding to an oscillation region where the lower electrode (10) and the upper electrode (12) of the piezoelectric resonator stack (14) overlap each other in the thickness direction. The fixed charge density in the insulating layer (6) is 1×1011 cm?2 or less. At the time of manufacturing the thin film piezoelectric resonator, the insulating layer is formed in contact with the semiconductor substrate and then, heat treatment at 300° C.

Abstract: Four frequency components (f1 to f4) (where, f1<f2<f3<f4) are input into a port (10) of a first demultiplexing filter circuit (1), and demultiplexed into low frequency components (f1 and f2) and high frequency components (f3 and f4), and input in a port (20) of a second demultiplexing filter circuit (2) and a port (30) of a third demultiplexing filter circuit (3), respectively. The frequency components (f1 and f2) are demultiplexed into the component (f1) and the component (f2) by the second demultiplexing filter circuit (2), and output from a port (23) and a port (24), respectively. The frequency components (f3 and f4) are demultiplexed into the component (f3) and the component (f4) by the third demultiplexing filter circuit (3), and output from a port (33) and a port (34), respectively.

Abstract: Four frequency components (f1 to f4) (where, f1<f2<f3<f4) are input into a port (10) of a first demultiplexing filter circuit (1), and demultiplexed into low frequency components (f1 and f2) and high frequency components (f3 and f4), and input in a port (20) of a second demultiplexing filter circuit (2) and a port (30) of a third demultiplexing filter circuit (3), respectively. The frequency components (f1 and f2) are demultiplexed into the component (f1) and the component (f2) by the second demultiplexing filter circuit (2), and output from a port (23) and a port (24), respectively. The frequency components (f3 and f4) are demultiplexed into the component (f3) and the component (f4) by the third demultiplexing filter circuit (3), and output from a port (33) and a port (34), respectively.

Abstract: A dielectric ceramic composition for high frequency wave having a composition comprising Al, Zr, Ti, Sn and O as a basic composition and represented by compositional formula: aAl2O3-bZrO2-cTiO2-dSnO2 (in which 0.4068<a<0.9550, 0<b<0.1483, 0.0225<c<0.3263, 0.0203<d<0.1186, a+b+c+d=1).

Abstract: A dielectric ceramic composition for high frequency wave having a composition comprising Al, Zr, Ti, Sn and O as a basic composition and represented by compositional formula: