Abstract: There is provided a semiconductor device that includes a diode portion, the semiconductor device including: a drift region of a first conductivity type provided in a semiconductor substrate; an anode region of a second conductivity type provided to be closer to a front surface side of the semiconductor substrate than the drift region; and a trench contact portion provided at a front surface of the semiconductor substrate in the diode portion, in which in a depth direction of the semiconductor substrate, a doping concentration of the anode region at a same depth as that of a bottom portion of the trench contact portion is 1E16 cm?3 or more and 1E17 cm?3 or less.

Abstract: Provided is a semiconductor device including a semiconductor substrate having a transistor portion and a diode portion; and an emitter electrode and a gate electrode provided above a front surface of the semiconductor substrate, wherein the transistor portion has a plurality of trench portions electrically connected to the gate electrode, a drift region of a first conductivity type provided in the semiconductor substrate, a base region of a second conductivity type provided above the drift region, and a trench bottom barrier region of a second conductivity type provided between the drift region and the base region and having a higher doping concentration than that of the base region, and the trench bottom barrier region is electrically connected to the emitter electrode.

Abstract: A semiconductor device, including a semiconductor substrate having a diode portion, wherein the diode portion includes: an anode region which is provided on a front surface of the semiconductor substrate and is of a second conductivity type; a trench portion provided so as to extend in a predetermined extending direction on the front surface of the semiconductor substrate; a trench contact portion provided on the front surface of the semiconductor substrate; and a plug region which is provided at a lower end of the trench contact portion and is of a second conductivity type, and which has a doping concentration higher than that of the anode region, wherein a plurality of plug regions, each of which being the plug region, is provided separately from each other along the extending direction, is provided.

Abstract: A semiconductor device has transistor portions and diode portions. The transistor portions have a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type, second semiconductor regions of the first conductivity type, gate insulating films, gate electrodes, a first semiconductor layer of the first conductivity type, a third semiconductor region of the second conductivity type, a first electrode, and a second electrode. The diode portions have the semiconductor substrate, the first semiconductor region, the first semiconductor layer, a fourth semiconductor region of the first conductivity type, the first electrode, and the second electrode. The first semiconductor layer has a predetermined region, a depth of the predetermined region from a second main surface of the semiconductor substrate is greater than a depth of a region of the first semiconductor layer excluding the predetermined region, from the second main surface of the semiconductor substrate.

Abstract: A semiconductor device has transistor portions and diode portions. The transistor portions have a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type, second semiconductor regions of the first conductivity type, gate insulating films, gate electrodes, a first semiconductor layer of the first conductivity type, a third semiconductor region of the second conductivity type, a first electrode, and a second electrode. The diode portions have the semiconductor substrate, the first semiconductor region, the first semiconductor layer, a fourth semiconductor region of the first conductivity type, the first electrode, and the second electrode. A first depth of the first semiconductor layer from the back surface of the semiconductor substrate in the transistor portions is greater than a second depth of the first semiconductor layer from the back surface of the semiconductor substrate in the diode portions.

Abstract: A power train support structure includes a first front side frame disposed on one of left and right sides of a power train; a second front side frame disposed on the other of the left and right sides of the power train, and being greatly away from the power train with respect to the first front side frame; a mounting bracket having one of left and right ends connected to the power train; and a connecting member for connecting the mounting bracket and the second front side frame. The mounting bracket includes a front fixing portion and a rear fixing portion to be fixed to the power train. A strength of the front fixing portion and the rear fixing portion is set to such a strength that the rear fixing portion is broken by a collision load from a front side, and the front fixing portion is not broken.

Abstract: A semiconductor device including a diode region provided in a semiconductor substrate is provided, the diode region including a base region of a first conductivity type exposed on an upper surface of the semiconductor substrate, a cathode region of a second conductivity type exposed on a lower surface of the semiconductor substrate, an inter-cathode region of a first conductivity type exposed on the lower surface of the semiconductor substrate and alternately arranged with the cathode region in a predetermined direction, and a floating region of a second conductivity type provided above the cathode region and above the inter-cathode region.

Abstract: A semiconductor device has transistor portions and diode portions. The transistor portions have a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type, second semiconductor regions of the first conductivity type, gate insulating films, gate electrodes, a first semiconductor layer of the first conductivity type, a third semiconductor region of the second conductivity type, a first electrode, and a second electrode. The diode portions have the semiconductor substrate, the first semiconductor region, the first semiconductor layer, a fourth semiconductor region of the first conductivity type, the first electrode, and the second electrode. A first depth of the first semiconductor layer from the back surface of the semiconductor substrate in the transistor portions is greater than a second depth of the first semiconductor layer from the back surface of the semiconductor substrate in the diode portions.

Abstract: A power train support structure includes a first front side frame disposed on one of left and right sides of a power train; a second front side frame disposed on the other of the left and right sides of the power train, and being greatly away from the power train with respect to the first front side frame; a mounting bracket having one of left and right ends connected to the power train; and a connecting member for connecting the mounting bracket and the second front side frame. The mounting bracket includes a front fixing portion and a rear fixing portion to be fixed to the power train. A strength of the front fixing portion and the rear fixing portion is set to such a strength that the rear fixing portion is broken by a collision load from a front side, and the front fixing portion is not broken.

Abstract: A semiconductor device including a diode region provided in a semiconductor substrate is provided, the diode region including a base region of a first conductivity type exposed on an upper surface of the semiconductor substrate, a cathode region of a second conductivity type exposed on a lower surface of the semiconductor substrate, an inter-cathode region of a first conductivity type exposed on the lower surface of the semiconductor substrate and alternately arranged with the cathode region in a predetermined direction, and a floating region of a second conductivity type provided above the cathode region and above the inter-cathode region.