Abstract: There is provided a thermoelectric device capable of improving a power generation performance while keeping a hermetic sealing after a heat cycle is applied, and also achieving simplification of a structure and improvement in productivity and reliability of a device by reducing the number of articles, and a method of manufacturing the same. A thermoelectric device, includes a metal substrate 2, a thermoelectric element 3 mounted on a center portion of a surface of the metal substrate 2, a metal lid 4 for covering an upper surface and side surfaces of the thermoelectric element 3, and a joining metal member 5 provided to a peripheral portion of a surface of the metal substrate 2 to hermetically seal a space between the metal substrate 2 and the lid 4.

Abstract: In order to provide a highly reliable thermoelectric device, in a thermoelectric device, a plurality of heat-radiating-side electrodes, arranged in accordance with positions where respective thermoelectric elements are to be arranged, are arrayed in an array fashion on a planer surface of a heat-radiating-side board. Heat-radiating-side end surfaces of the plurality of p-type thermoelectric elements and n-type thermoelectric elements and the heat-radiating-side electrodes are joined together by solders. Heat-absorbing-side electrodes are brought into sliding contact with heat-absorbing-side end surfaces of these thermoelectric elements.

Abstract: A thermoelectric direct conversion device is foemed of a plurality of thermoelectric direct conversion semiconductor pairs each including a p-type semiconductor and an n-type semiconductor; a plurality of high-temperature electrodes and a plurality of low-temperature electrodes each electrically connecting the p-type semiconductor and the n-type semiconductor; a high-temperature insulating plate and a low-temperature insulating plate each thermally connected to the plurality of thermoelectric direct conversion semiconductor pairs via the plurality of high-temperature electrodes and the plurality of low-temperature electrodes, respectively; at least one diffusion barrier layer is disposed between the high- or low-temperature electrodes and the thermoelectric direct conversion semiconductor pairs, and the entire device is hermetically sealed up within an airtight case containing a vacuum or inert gas atmosphere, whereby diffusion between the electrodes and the semiconductor pairs is prevented to provide a therm

Abstract: In order to provide a highly reliable thermoelectric device, in a thermoelectric device, a plurality of heat-radiating-side electrodes, arranged in accordance with positions where respective thermoelectric elements are to be arranged, are arrayed in an array fashion on a planer surface of a heat-radiating-side board. Heat-radiating-side end surfaces of the plurality of p-type thermoelectric elements and n-type thermoelectric elements and the heat-radiating-side electrodes are joined together by solders. Heat-absorbing-side electrodes are brought into sliding contact with heat-absorbing-side end surfaces of these thermoelectric elements.

Abstract: In order that a thermoelectric device is caused to stably operate even under high temperature environment, the thermoelectric device includes: first and second substrates, each being provided with a plurality of electrodes; a plurality of thermoelectric elements arranged between the first and second substrates in such a manner that one ends of the thermoelectric elements are associated with the respective electrodes on the first substrate, and the other ends thereof are associated with the respective electrodes on the second substrate; a defining member defining positions of the respective thermoelectric elements; and a lid disposed outside of the second substrate, and connected to the first substrate in such a manner that pressure is applied between the second substrate and the first substrate.

Abstract: In order to make a thermoelectric device usable in a high temperature environment of 300° C. or above, the necessity for solder is eliminated by bonding each electrode of a second substrate to one end of each thermoelectric element by using gold. Further, a conductive member, capable of accommodating expansion and contraction of the thermoelectric elements, is provided between each electrode of a first substrate, on which bonding by gold is not performed, and the other end of each thermoelectric element. Additionally, a lid is placed outside to the second substrate, and the lid and the first substrate are coupled so that pressure can be applied between the first and second substrates. Thus, the second substrate, the electrodes and the thermoelectric elements are held. This prevents the thermoelectric elements from being damaged due to thermal deformation as in the case where electrodes are bonded to thermoelectric elements by solder.

Abstract: The present invention provides a conductive adhesive agent capable of being diluted with a solvent to give good coating workability and allowing formation of a conductive joint excellent in both thermal conductivity and electrical conductivity by inhibiting a gas generated when a binder resin is heat-cured after attachment of a part. The conductive adhesive agent according to the present invention is a conductive adhesive agent wherein, based on 100 parts by weight of silver powder having an average particle diameter of micrometers, which is used for a conductive medium, e.g.

Abstract: In a thermoelectric device, metal fiber nets as conductive members having elasticity are placed between first electrodes and thermoelectric elements, in order to increase productivity and make it possible to reduce variations in performance without impairing the reliability of a slidable structure even if each component is heated to be thermally deformed. This placement prevents the temperature of the metal fiber nets from becoming high in the operation of the thermoelectric device and prevents the elasticity of the metal fiber nets from being lost. Further, this constitution eliminates the necessity for bonding the first electrodes to the thermoelectric elements using solder. Moreover, the elasticity of the metal fiber nets makes it possible to accommodate variations in height among the respective thermoelectric elements when the thermoelectric device is assembled.

Abstract: In order to provide a highly reliable thermoelectric device, in a thermoelectric device, a plurality of heat-radiating-side electrodes, arranged in accordance with positions where respective thermoelectric elements are to be arranged, are arrayed in an array fashion on a planer surface of a heat-radiating-side board. Heat-radiating-side end surfaces of the plurality of p-type thermoelectric elements and n-type thermoelectric elements and the heat-radiating-side electrodes are joined together by solders. Heat-absorbing-side electrodes are brought into sliding contact with heat-absorbing-side end surfaces of these thermoelectric elements.

Abstract: A semiconductor device comprising a wiring circuit board and a semiconductor chip mounted through a bump electrode on the circuit board, a space between the circuit board and the semiconductor chip as well as a periphery of the semiconductor chip being encapsulated with a resin containing a filler. The resin is constituted by a first resin disposed in a region surrounded by bump electrodes positioned on the outermost periphery of the semiconductor chip, and by a second resin disposed in a region not surrounded by bump electrodes positioned on the outermost periphery of the semiconductor chip, the first and second resins being distinct from each other in at least one feature selected from a content, a maximum particle diameter and an average particle diameter of the filler.

Abstract: A semiconductor device includes a wiring board having a main surface and a plurality of pad electrodes formed on the main surface, a rectangular semiconductor element having a main surface facing the main surface of the wiring board and mounted on the main surface of the wiring board, a solder resist formed to surround the semiconductor element with a preset distance therefrom on the main surface of the wiring board, a plurality of terminal electrodes formed on the end portion of the main surface of the semiconductor element, and a plurality of solder bumps for electrically connecting the plurality of pad electrodes to the plurality of terminal electrodes with a gap provided between the main surface of the wiring board and the main surface of the semiconductor element, wherein each of the plurality of pad electrodes includes at least a portion which extends from substantially under a corresponding one of the plurality of terminal electrodes of the semiconductor element to the solder resist lying outside the s

Abstract: A semiconductor device comprising a wiring circuit board and a semiconductor chip mounted through a bump electrode on the circuit board, a space between the circuit board and the semiconductor chip as well as a periphery of the semiconductor chip being encapsulated with a resin containing a filler. The resin is constituted by a first resin disposed in a region surrounded by bump electrodes positioned on the outermost periphery of the semiconductor chip, and by a second resin disposed in a region not surrounded by bump electrodes positioned on the outermost periphery of the semiconductor chip, the first and second resins being distinct from each other in at least one feature selected from a content, a maximum particle diameter and an average particle diameter of the filler.