Abstract: Connection of the leads for a thermoelectric module is readily accomplished, and after connection, the tensile strength of the connection is enhanced. One ends of the front and back side lead patterns for the thermoelectric module, formed on a support plate, are connected by solder to a Cu rod provided at an end of a group of thermoelectric semiconductor elements affixed to the support plate. After the front end of the lead for the thermoelectric module is bent and passed from the side of the front lead pattern through a through hole formed between the front and back side lead patterns, the front end is connected to the back side lead pattern by solder.

Abstract: A thermoelectric module unit is provided with a thermoelectric module that comprises a partitioning plate, a thermoelectric semiconductor element fixed to the partitioning plate in a state passing through the partitioning plate but also in a state that is electrically insulated from the partitioning plate. A first metal electrode is connected to a first surface of the thermoelectric semiconductor element, and a second metal electrode is connected to a second surface of the thermoelectric semiconductor element. A first confined portion encloses a region from the partitioning plate towards the first surface and is also connected to a first heat pipe. An operating fluid is vacuum-sealed within the first confined portion and the first heat pipe.

Abstract: A thermoelectric element (1) comprises a partitioning plate (2) having electrical insulating properties; equal numbers of p-type thermoelectric semiconductor elements (3A) and n-type thermoelectric semiconductor elements (3B) fixed to the partitioning plate (2) in a state in which they pass through the partitioning plate (2); flat copper electrodes (4) fixed to upper sides of the p-type thermoelectric semiconductor elements (3A) and n-type thermoelectric semiconductor elements (3B); and T-shaped copper electrodes (5) fixed to lower sides of the p-type thermoelectric semiconductor elements (3A) and n-type thermoelectric semiconductor elements (3B). Lower portions protruding from the lower surface of the partitioning plate (2) are accommodated within a cooling vessel and are cooled directly by a coolant or air.