Abstract: An input assistance device includes: an operation unit configured to accept information selected by a user from a plurality of input candidates; a storage unit configured to store a priority for displaying the plurality of input candidates according to a display order, the priority determined based on an input history of information accepted by the operation unit in association with each of the plurality of input candidates; and a control unit configured to refer to the storage unit, to change the display order of the input candidates determined based on the priority into other display order by replacing a first input candidate among the plurality of input candidates in a first range from a top percentile priority with a second input candidate in a second range that is outside of the first range, and to output the plurality of input candidates according to the other display order.

Abstract: A thermal cycle includes: increasing a temperature from an initial temperature to a temperature T1 at an arbitrary rate R1 (° C./sec); holding the temperature at the temperature T1 for an arbitrary period t1 (sec); increasing the temperature from the temperature T1 to a temperature T2 at a rate R2 (° C./sec) of 1.0×107 (° C./sec) or less; and holding the temperature at the temperature T2 for a period t2 (sec) of 50 msec or less. The thermal cycle thereafter includes: decreasing the temperature from the temperature T2 to the temperature T1 at a rate R1? (° C./sec) of 1.0×107 (° C./sec) or less; holding the temperature T1 for an arbitrary period t3 (sec); and decreasing the temperature from the temperature T1 to a final temperature at an arbitrary rate R2? (° C./sec). Such a thermal cycle is successively repeated in a plurality of iterations.

Abstract: A digital signature device includes an operation unit configured to accept key information that specifies target information of digital signature from a user and to accept the digital signature from the user, a control unit configured to extract one or more values that correspond to the key information that is accepted, from a database that stores a plurality of pieces of key information that includes the key information in association with each value, to calculate a characteristic value that is uniquely defined for the value based on the one or more values that are extracted, and to generate signature data that includes the key information, the characteristic value, and information for the digital signature for each of the one or more values, and a storage unit configured to store the signature data.

Abstract: An impurity-activating thermal process is performed after a target is subjected to an impurity introduction step. In this thermal process, while a spike RTA process including a holding period for holding a temperature at a predetermined temperature is performed, at least one iteration of millisecond annealing at a temperature higher than the predetermined temperature is performed during the holding period of the spike RTA process.

Abstract: An image processing apparatus includes: a relative coordinate acquisition part acquiring a corresponding position on an input image with respect to a predetermined pixel on an output image; a first storage part storing position information of the corresponding position; a reading control part causing pixel values of input pixels on the input image to be sequentially read; an organization part organizing a set of grid points formed of input pixels among input pixels read by the reading control part; a judgment part judging, based on the position information, whether or not pixel values of pixels in the vicinity of the corresponding position used in calculating a pixel value of the predetermined pixel have been read; a local memory storing, in a case where judgment is made that pixels in the vicinity of the corresponding position have been read, pixel values of pixels forming the set of grid points as pixel values of surrounding pixels regarding the predetermined pixel; and a pixel value calculation part calcul

Abstract: An information processing apparatus is provided which includes a position acquisition unit for obtaining a display position of an input area in a display area, and a display control unit for controlling, based on the display position of the input area, in the display area a display position of an input operation area in which a character to be displayed in the input area is input. The display control unit displays the input area near the display position of the input area, and makes the input operation area follow the movement of the input area when the display position of the input area is moved.

Abstract: A thermal cycle includes: increasing a temperature from an initial temperature to a temperature T1 at an arbitrary rate R1 (° C./sec); holding the temperature at the temperature T1 for an arbitrary period t1 (sec); increasing the temperature from the temperature T1 to a temperature T2 at a rate R2 (° C./sec) of 1.0×107 (° C./sec) or less; and holding the temperature at the temperature T2 for a period t2 (sec) of 50 msec or less. The thermal cycle thereafter includes: decreasing the temperature from the temperature T2 to the temperature T1 at a rate R1? (° C./sec) of 1.0×107 (° C./sec) or less; holding the temperature T1 for an arbitrary period t3 (sec); and decreasing the temperature from the temperature T1 to a final temperature at an arbitrary rate R2? (° C./sec). Such a thermal cycle is successively repeated in a plurality of iterations.

Abstract: An impurity-activating thermal process is performed after a target is subjected to an impurity introduction step. In this thermal process, while a spike RTA process including a holding period for holding a temperature at a predetermined temperature is performed, at least one iteration of millisecond annealing at a temperature higher than the predetermined temperature is performed during the holding period of the spike RTA process.

Abstract: A recording apparatus including: a receiving portion for receiving a content data sent using radio wave; a recording portion for recording the content data received by the receiving portion in a storage medium; a determining portion for determining whether or not a receiving status of the content data by the receiving portion satisfies a predetermined standard; and a control portion for when the determining portion determines that the standard is not satisfied, controlling the recording portion to stop recording of the content data to the storage medium.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a semiconductor region of a first conductive type on a semiconductor wafer; forming a gate electrode on the semiconductor region; on the semiconductor region, forming a first insulating film over the whole surface including the upper surface of the gate electrode; by removing the formed first insulating film through etching from the top surface side, forming first sidewalls, covering the side surfaces of the gate electrode, from the first insulating film; and by implanting first impurity ions of a second conductive type to the semiconductor region by using an ion implantation device capable of processing a plurality of semiconductor wafers collectively, forming first impurity diffusion regions on both sides of the gate electrode in the semiconductor region.

Abstract: An electronic device manufacturing apparatus is provided with a support which includes a shelf for supporting a substrate, a sensor which obtains the position of the substrate and a position correcting mechanism which corrects the position of the substrate. Or alternatively, an electronic device manufacturing apparatus is provided with a support which includes a shelf for supporting a substrate and the shelf includes a substrate support plane which forms an angle of 22° or more to 90° or less with a horizontal plane.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a semiconductor region of a first conductive type on a semiconductor wafer; forming a gate electrode on the semiconductor region; on the semiconductor region, forming a first insulating film over the whole surface including the upper surface of the gate electrode; by removing the formed first insulating film through etching from the top surface side; forming first sidewalls, covering the side surfaces of the gate electrode, from the first insulating film; and by implanting first impurity ions of a second conductive type to the semiconductor region by using an ion implantation device capable of processing a plurality of semiconductor wafers collectively, forming first impurity diffusion regions on both sides of the gate electrode in the semiconductor region; In the step of forming the first impurity diffusion regions, implantation of the first impurity ions are dividedly performed a plurality of times, and the semiconductor wafer is