Abstract: A plasma processing apparatus includes: a processing container having a vertical tubular shape and an opening formed in a side wall of the processing container, the processing container configured to accommodate a plurality of substrates in multiple stages; a plasma partition wall airtightly provided on an outer wall of the processing container and configured to cover the opening and define a plasma generation space; a plasma electrode provided along the plasma partition wall; and a processing gas supplier provided outside the plasma generation space and configured to supply a plasma generation gas.

Abstract: A substrate processing method includes preparing a substrate having a target film including silicon, carbon, and nitrogen on a surface of the substrate; supplying hydrogen gas and oxygen gas to the target film to oxidize a surface layer of the target film and form an oxide film; and etching the oxide film.

Abstract: A substrate processing method includes housing, in a processing container, a substrate having an insulating film on a surface of the substrate; exposing the insulating film to plasma generated from a gas including deuterium gas in a state where the substrate housed in the processing container is maintained at a first temperature, to introduce deuterium into the insulating film; and heat-treating the insulating film without exposing the insulating film to the plasma in a state where the substrate housed in the processing container is controlled to be at a second temperature that is different from the first temperature, to adjust concentration of the deuterium introduced into the insulating film.

Abstract: A processing apparatus includes a processing container accommodating a substrate therein, a plasma generator having a plasma generation space communicating with an inside of the processing container, a first gas supply provided in the plasma generation space and configured to supply a hydrogen gas, and a second gas supply provided in the processing container and configured to supply a hydrogen gas.

Abstract: An ignition method in a plasma processing apparatus includes: applying a first radio frequency from a radio-frequency power supply to an electrode of a plasma generator, thereby igniting plasma from a gas, the radio-frequency power supply being capable of applying a radio frequency of a variably controlled frequency to the electrode of the plasma generator; and applying a second radio frequency different from the first radio frequency to the electrode of the plasma generator after a predetermined time is elapsed after applying the first radio frequency to the electrode of the plasma generator.

Abstract: A plasma processing apparatus includes: a processing container having a vertical tubular shape and an opening formed in a side wall of the processing container, the processing container configured to accommodate a plurality of substrates in multiple stages; a plasma partition wall airtightly provided on an outer wall of the processing container and configured to cover the opening and define a plasma generation space; a plasma electrode provided along the plasma partition wall; and a processing gas supplier provided outside the plasma generation space and configured to supply a plasma generation gas.

Abstract: A processing apparatus includes a processing container accommodating a substrate therein, a plasma generator having a plasma generation space communicating with an inside of the processing container, a first gas supply provided in the plasma generation space and configured to supply a hydrogen gas, and a second gas supply provided in the processing container and configured to supply a hydrogen gas.

Abstract: Provided is a capacitive touch panel which has enhanced sensitivity and is usable in an image display panel, etc. in this capacitive touch panel, a window, a first transparent film having a first transparent conductive electrode pattern formed on one surface thereof, and a second transparent film having a second transparent conductive electrode pattern which is formed on one surface thereof and disposed with respect to the first transparent film in such a manner as to allow a capacitance to be formed therebetween, are stacked in turn. The capacitive touch panel comprises a first transparent inter-layer resin provided between the window and the first transparent film, and a second transparent inter-layer resin provided between the first transparent film and the second transparent film, wherein the first transparent inter-layer resin has a dielectric constant greater than that of the second transparent inter-layer resin.

Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.

Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible includes: performing a first step which forms the seed film by supplying a seed film raw material gas including at least any one of an aminosilane-based gas and a higher silane into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state by supplying a silane-based gas and an impurity-containing gas into the processing container.

Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.

Abstract: A method of forming an amorphous silicon film includes: forming a seed layer on a surface of a base by heating the base and supplying an amino silane-based gas to the heated base, forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base, and decreasing a film thickness of the amorphous silicon film by etching the amorphous silicon film formed with thickness for layer growth.

Abstract: A method of forming an amorphous silicon film includes: forming a seed layer on a surface of a base by heating the base and supplying an amino silane-based gas to the heated base, forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base, and decreasing a film thickness of the amorphous silicon film by etching the amorphous silicon film formed with thickness for layer growth.

Abstract: A method of forming an amorphous silicon film includes: forming a seed layer on a surface of a base by heating the base and supplying an amino silane-based gas to the heated base, forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base, and decreasing a film thickness of the amorphous silicon film by etching the amorphous silicon film formed with thickness for layer growth.

Abstract: A UV-curable optical resin adhesive composition is provided having excellent transparency, adhesion reliability, and durability without causing any adverse affect on image qualities such as luminance and contrast, and suitable for a reworking (repairing) process. The UV-curable optical resin adhesive composition fills a gap between an image display panel and a protective cover plate. The UV-curable optical resin adhesive composition contains, a urethane acrylate-based polymer (A) having a (meth) acryloyl group and a hydroxyl group on side chains thereof, and a photopolymerization initiator (B).

Abstract: The present invention provides a low-modulus low-stress resin which has such heat resistance that cohesive force and reliability can be retained even at high temperatures and which is applicable as various functional materials. The resin is a thermoplastic resin having a modulus of elasticity at room temperature, 25° C., of 1 GPa or lower and a modulus of elasticity at 250° C. of 1 MPa or higher, or a precursor resin thereof.

Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible includes: performing a first step which forms the seed film by supplying a seed film raw material gas including at least any one of an aminosilane-based gas and a higher silane into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state by supplying a silane-based gas and an impurity-containing gas into the processing container.

Abstract: A method of forming an amorphous silicon film includes: forming a seed layer on a surface of a base by heating the base and supplying an amino silane-based gas to the heated base, forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base, and decreasing a film thickness of the amorphous silicon film by etching the amorphous silicon film formed with thickness for layer growth.

Abstract: A dye-sensitized solar cell of a polymer resin type is provided, which is excellent in sealability. A counter electrode substrate provided with an electrically conductive transparent electrode layer and a working electrode substrate provided with an electrically conductive transparent electrode layer are opposed to each other with the electrode layers facing inward. A space defined between the substrates is sealed with a seal member disposed along peripheries of inner surfaces of the substrates. An electrolyte solution is filled in the sealed space. The substrates are each made of a polymer resin material. Inorganic layers are provided between the substrates and the electrode layers. The seal member is composed of a material obtained by curing a photopolymerizable composition essentially comprising a specific hydrogenated elastomer derivative. The inorganic layers each have a portion coated with a (meth)acryloxyalkylsilane silane coupling agent in contact with the seal member.

Abstract: A UV-curable optical resin adhesive composition is provided having excellent transparency, adhesion reliability, and durability without causing any adverse affect on image qualities such as luminance and contrast, and suitable for a reworking (repairing) process. The UV-curable optical resin adhesive composition fills a gap between an image display panel and a protective cover plate. The UV-curable optical resin adhesive composition contains, a urethane acrylate-based polymer (A) having a (meth) acryloyl group and a hydroxyl group on side chains thereof, and a photopolymerization initiator (B).