Abstract: Provided are a light diffuser in which the brightness or hue in an emission surface of the light diffuser is controlled, a lighting device, and a method of manufacturing such a light diffuser. A light diffuser (100) includes: an incident surface (121) to receive first light (Li); a light scattering portion (110) that includes light scattering particles (112) present in a medium (111) and generates scattered light by guiding the received first light and scattering the received first light with the light scattering particles; and an emission surface (122) to emit the scattered light, wherein a concentration of the light scattering particles in the light scattering portion is distributed such that the concentration increases non-linearly and continuously or discontinuously with distance from an incident edge in a light guiding direction of the first light in the light scattering portion.

Abstract: Provided are a light diffuser in which the brightness or hue in an emission surface of the light diffuser is controlled, a lighting device, and a method of manufacturing such a light diffuser. A light diffuser (100) includes: an incident surface (121) to receive first light (Li); a light scattering portion (110) that includes light scattering particles (112) present in a medium (111) and generates scattered light by guiding the received first light and scattering the received first light with the light scattering particles; and an emission surface (122) to emit the scattered light, wherein a concentration of the light scattering particles in the light scattering portion is distributed such that the concentration increases non-linearly and continuously or discontinuously with distance from an incident edge in a light guiding direction of the first light in the light scattering portion.

Abstract: A semiconductor device includes a semiconductor layer, an Al alloy film electrically connected to the semiconductor layer, and a transparent electrode layer directly contacting with the Al alloy film at least over an insulating substrate. The Al alloy film includes one or more kinds of elements selected from Fe, Co and Ni in total of 0.5 to 10 mol %, and a remaining substantially comprises Al.

Abstract: A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.

Abstract: A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.

Abstract: A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.

Abstract: A dielectric film wherein N in the state of an Si3=?N bonding is present in a concentration of 3 atomic % or more in the surface side of an oxide film and also is present in a concentration of 0.1 atomic % or less in the interface side of the oxide film can achieve the prevention of the B diffusion and also the prevention of the deterioration of the NBTI resistance in combination. When the Ar/N2 radical nitridation is used, it is difficult for the resultant oxide film to satisfy the condition wherein N in the above bonding state is present in a concentration of 3 atomic % or more in the surface side of an oxide film and simultaneously is present in a concentration of 0.1 atomic % or less in the interface side of the oxide film, whereas, the above distribution of the N concentration can be achieved by using any of the gas combinations of Xe/N2, Kr/N2, Ar/NH3, Xe/NH3, Kr/NH3, Ar/N2/H2, Xe/N2/H2 and Kr/N2/H2.

Abstract: A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.

Abstract: A semiconductor device includes a semiconductor layer, an Al alloy film electrically connected to the semiconductor layer, and a transparent electrode layer directly contacting with the Al alloy film at least over an insulating substrate. The Al alloy film includes one or more kinds of elements selected from Fe, Co and Ni in total of 0.5 to 10 mol %, and a remaining substantially comprises Al.