Abstract: A semiconductor measurement device includes an electrode provided in a semiconductor sample, and a probe contactable with the semiconductor sample. A driver moves a contact position of the probe with respect to the semiconductor sample. A power supply applies electric power between the probe and the electrode. A measurement operation portion measures a current flowing via the semiconductor sample between the probe and the electrode as a voltage applied between the probe and the electrode is changed, the measurement operation portion measuring the current flowing for each of plural measurement points of a surface of the semiconductor sample while causing the probe to scan the measurement points, or while sequentially bringing the probe into contact with the measurement points. A display displays a relationship between the voltage and the current measured at each of the measurement points.

Abstract: A surface light source device includes a light source; a light guide plate that has a light entrance surface through which light enters, and that emits the light entering through the light entrance surface from a light exit surface; a wiring board; and a metal frame. The metal frame includes a bottom portion having a bottom surface that faces a surface on an opposite side to the light exit surface, a side wall erected on an outer periphery of the bottom surface, and a projecting portion provided on the side wall so as to project toward the bottom surface side. The metal frame houses the light source, the light guide plate, and the wiring board. At least a part of the light source is disposed between the bottom portion and the projecting portion, and the wiring board is disposed between the light source and the bottom portion.

Abstract: A frame includes a resin frame which surrounds at least a part of the side faces of a light guide plate; a reflection diffusion material which is added in the resin frame and reflects and diffuses light; and an absorption material which is added in the resin frame and absorbs light. The reflectance of the resin frame is equal to or greater than 30% and equal to or smaller than 80%.

Abstract: According to one embodiment, selection gates include an extract portion, a first portion, and a second portion. A predetermined potential is transmitted from the extract portion to the first portion. The predetermined potential is transmitted from the extract portion to the second portion with a delayed time to the first portion. A threshold voltage of a first selection transistor is different from a threshold voltage of a second selection transistor. The first selection transistor includes a semiconductor body disposed in the first portion as a channel. The second selection transistor includes the semiconductor body disposed in the second portion as a channel.

Abstract: A surface light source device includes a light source; a light guide plate that has a light entrance surface through which light enters, and that emits the light entering through the light entrance surface from a light exit surface; a wiring board; and a metal frame. The metal frame includes a bottom portion having a bottom surface that faces a surface on an opposite side to the light exit surface, a side wall erected on an outer periphery of the bottom surface, and a projecting portion provided on the side wall so as to project toward the bottom surface side. The metal frame houses the light source, the light guide plate, and the wiring board. At least a part of the light source is disposed between the bottom portion and the projecting portion, and the wiring board is disposed between the light source and the bottom portion.

Abstract: A measuring method of a scanning probe microscopy moves the probe from the first measuring point to the second measuring point while the probe has contact with the object to be measured and a pressing force weaker than the first pressing force is applied between the probe and the object to be measured after the measurement at the first measuring point has ended, applies the first pressing force between the probe and the object to be measured until the tip end position of the probe reaches the first distance in the depth direction from the upper surface of the object to be measured, and measures the physical property information of the object to be measured after the tip end position of the probe has reached the first distance in the depth direction from the upper surface of the object to be measured at the second measuring point.

Abstract: A frame includes a resin frame which surrounds at least a part of the side faces of a light guide plate; a reflection diffusion material which is added in the resin frame and reflects and diffuses light; and an absorption material which is added in the resin frame and absorbs light. The reflectance of the resin frame is equal to or greater than 30% and equal to or smaller than 80%.

Abstract: A conductive probe includes a protruding portion provided on an elastic member, a conductive metal film covering at least a tip of the protruding portion; and an insulating thin film covering the conductive metal film provided on the tip of the protruding portion.

Abstract: According to an embodiment, a semiconductor memory device includes a substrate, a stacked body and a columnar portion. The columnar portion is provided inside the stacked body and includes a semiconductor portion extending in a first direction. The columnar portion has widths having mutually-different sizes in a second direction perpendicular to the first direction. The widths include first and second widths. The first width is a width of the columnar portion positioned inside a first electrode film of lowermost layer of the electrode films. The first width is substantially the same width at positions in the first direction of the columnar portion. The second width is a width of the columnar portion positioned inside a second electrode film of the electrode films. The second width is substantially the same width at positions in the first direction of the columnar portion. The first width is smaller than the second width.

Abstract: A semiconductor measurement device includes an electrode provided in a semiconductor sample, and a probe contactable with the semiconductor sample. A driver moves a contact position of the probe with respect to the semiconductor sample. A power supply applies electric power between the probe and the electrode. A measurement operation portion measures a current flowing via the semiconductor sample between the probe and the electrode as a voltage applied between the probe and the electrode is changed, the measurement operation portion measuring the current flowing for each of plural measurement points of a surface of the semiconductor sample while causing the probe to scan the measurement points, or while sequentially bringing the probe into contact with the measurement points. A display displays a relationship between the voltage and the current measured at each of the measurement points.

Abstract: According to one embodiment, selection gates include an extract portion, a first portion, and a second portion. A predetermined potential is transmitted from the extract portion to the first portion. The predetermined potential is transmitted from the extract portion to the second portion with a delayed time to the first portion. A threshold voltage of a first selection transistor is different from a threshold voltage of a second selection transistor. The first selection transistor includes a semiconductor body disposed in the first portion as a channel. The second selection transistor includes the semiconductor body disposed in the second portion as a channel.

Abstract: According to one embodiment, a variable resistance element includes first and second conductive layers and a first layer. The first conductive layer includes at least one of silver, copper, zinc, titanium, vanadium, chrome, manganese, iron, cobalt, nickel, tellurium, or bismuth. The second conductive layer includes at least one of platinum, gold, iridium, tungsten, palladium, rhodium, titanium nitride, or silicon. The first layer includes oxygen and silicon and is provided between the first conductive layer and the second conductive layer. The first layer includes a plurality of holes. The holes are smaller than a thickness of the first layer along a first direction. The first direction is from the second conductive layer toward the first conductive layer. The first layer does not include carbon, or a composition ratio of carbon included in the first layer to silicon included in the first layer is less than 0.1.

Abstract: According to one embodiment, a variable resistance element includes first and second conductive layers and a first layer. The first conductive layer includes at least one of silver, copper, zinc, titanium, vanadium, chrome, manganese, iron, cobalt, nickel, tellurium, or bismuth. The second conductive layer includes at least one of platinum, gold, iridium, tungsten, palladium, rhodium, titanium nitride, or silicon. The first layer includes oxygen and silicon and is provided between the first conductive layer and the second conductive layer. The first layer includes a plurality of holes. The holes are smaller than a thickness of the first layer along a first direction. The first direction is from the second conductive layer toward the first conductive layer. The first layer does not include carbon, or a composition ratio of carbon included in the first layer to silicon included in the first layer is less than 0.1.

Abstract: A conductive probe includes a protruding portion provided on an elastic member, a conductive metal film covering at least a tip of the protruding portion; and an insulating thin film covering the conductive metal film provided on the tip of the protruding portion.

Abstract: A measuring method of a scanning probe microscopy moves the probe from the first measuring point to the second measuring point while the probe has contact with the object to be measured and a pressing force weaker than the first pressing force is applied between the probe and the object to be measured after the measurement at the first measuring point has ended, applies the first pressing force between the probe and the object to be measured until the tip end position of the probe reaches the first distance in the depth direction from the upper surface of the object to be measured, and measures the physical property information of the object to be measured after the tip end position of the probe has reached the first distance in the depth direction from the upper surface of the object to be measured at the second measuring point.

Abstract: A scanning probe microscope includes a stage on which a sample is mounted, a probe configured to measure a characteristic of the sample, and a controller configured to move the probe and the stage relative to each other along a scanning trajectory during measurement of the characteristic of the sample. The scanning trajectory includes a plurality of linear segments, wherein each pair of adjacent linear segments form an angle that is 90 degrees or less.

Abstract: A scanning probe microscope includes a stage on which a sample is mounted, a probe configured to measure a characteristic of the sample, and a controller configured to move the probe and the stage relative to each other along a scanning trajectory during measurement of the characteristic of the sample. The scanning trajectory includes a plurality of linear segments, wherein each pair of adjacent linear segments form an angle that is 90 degrees or less.

Abstract: The present invention provides an improved type protease which comprises an amino acid sequence that is at least 75% identical to SEQ ID NO:3, said improved type protease has at least one mutation selected from the group consisting of: (A) replacement of glutamine corresponding to glutamine at position 265 in SEQ ID NO: 3 with an acidic amino acid; and (B) replacement of glutamine at position 266 in SEQ ID NO: 3 with an acidic amino acid, and wherein said improved type protease has milk-clotting activity.

Abstract: The present invention provides an improved type protease which comprises an amino acid sequence that is at least 75% identical to SEQ ID NO:3, said improved type protease has at least one mutation selected from the group consisting of: (A) replacement of glutamine corresponding to glutamine at position 265 in SEQ ID NO: 3 with an acidic amino acid; and (B) replacement of glutamine at position 266 in SEQ ID NO: 3 with an acidic amino acid, and wherein said improved type protease has milk-clotting activity.

Abstract: A process for producing polycarbonate designed to improve the quality of polycarbonate as a polymerization product polymer and reduce the investment and operating costs is provided. Polycarbonate is produced in two horizontal cylindrical agitation reactors provided with agitation blades successively extended through the vessel and partly with agitation blades having a screw function, as horizontally ganged together in series without any agitator center shaft, where the primary agitation reactor is a uniaxial horizontal agitation reactor with the agitation blades rotating at a low speed ranging from 1 rpm to 10 rpm, while keeping a clearance between the inner wall of the vessel ad the agitation blades in a range of 1 mm to 50 mm, and the secondary agitation reactor is a biaxial horizontal agitation reactor with agitation blades provided horizontally and in parallel, without any rotating center shaft, which conducts treatment by agitation at a low speed ranging from 1 rpm to 15 rpm.