Abstract: The present invention provides a laminated member that prevents contact of a semiconductor chip and an external leading terminal etc. without increasing the number of components. The laminated member is a laminated member having a three-layer structure, comprising: an upper highly thermally conductive layer; a lower highly thermally conductive layer; and an intermediate layer having a low thermal expansion coefficient, wherein the above-described laminated member is larger than the above-described semiconductor chip in a plan view, and wherein a height position of the above-described first peripheral edge area is located at a certain distance below a height position of the above-described first bonding area, and a height position of the second peripheral edge area of the above-described second bonding area is located at a certain distance above a height position of the above-described second bonding area.

Abstract: The present invention provides a laminated member that prevents contact of a semiconductor chip and an external leading terminal etc. without increasing the number of components. The laminated member is a laminated member having a three-layer structure, comprising: an upper highly thermally conductive layer; a lower highly thermally conductive layer; and an intermediate layer having low thermal expansion coefficient, wherein the above-described laminated member is larger than the above-described semiconductor chip in a plan view, and wherein a height position of the above-described first peripheral edge area is located at certain distance below a height position of the above-described first bonding area, and a height position of the second peripheral edge area of the above-described second bonding area is located at certain distance above a height position of the above-described second bonding area.

Abstract: A power supply unit of an arc discharge device includes a semiconductor module 1 and a radiator fitted onto the semiconductor module 1. The semiconductor module 1 includes a module casing 2 and common units 3a to 3c retained by the module casing 2. Each of the common units 3a to 3c has: a ceramic substrate 50 having a circuit surface disposed with a semiconductor element 54 and a radiation surface on a side opposite to the circuit surface and a package 35 that exposes the radiation surface and seals the circuit surface with heat resistant resin. The radiator is fitted onto the module casing 2 to be thereby brought into abutting contact with all of the radiation surfaces of the common units 3a to 3c.

Abstract: To suppress warpage of a ceramic substrate, and to prevent a reduction in radiation efficiency. A power semiconductor module includes a module casing fitted with a radiator, and a common unit retained by the module casing. The common unit has: a ceramic substrate having a circuit surface disposed with a semiconductor element, and a radiation surface brought into abutting contact with the radiator; and a package formed by exposing the radiation surface and sealing the circuit surface with heat resistant resin. The circuit surface and the radiation surface are respectively formed of metal layers 51 formed on the ceramic substrate, and the metal layer 51 forming the radiation surface has: by forming a buffer pattern 512 including a groove part extending along a circumferential part thereof, a radiation pattern 510 formed on an inner side of the buffer pattern 512; and an outer peripheral pattern 511 formed on an outer side of the buffer pattern 512.

Abstract: To provide a thin solar cell module connector having improved reliability, enduring long use, and having high productivity. A diode chip 6 is disposed in a diode module 2. The diode module 2 is transfer-molded. The diode module 2 is fitted in an opening 22 in the module box 20.

Abstract: [Summary] [Object] To suppress warpage of a ceramic substrate, and to prevent a reduction in radiation efficiency. [Means for Settlement] A power semiconductor module includes a module casing fitted with a radiator, and a common unit retained by the module casing. The common unit has: a ceramic substrate having a circuit surface disposed with a semiconductor element, and a radiation surface brought into abutting contact with the radiator; and a package formed by exposing the radiation surface and sealing the circuit surface with heat resistant resin. The circuit surface and the radiation surface are respectively formed of metal layers 51 formed on the ceramic substrate, and the metal layer 51 forming the radiation surface has: by forming a buffer pattern 512 including a groove part extending along a circumferential part thereof, a radiation pattern 510 formed on an inner side of the buffer pattern 512; and an outer peripheral pattern 511 formed on an outer side of the buffer pattern 512.

Abstract: [Object] To incorporate more semiconductor elements in a small-sized lightweight power semiconductor module provided in an arc discharge device. [Means for Settlement] A power supply unit of an arc discharge device includes a semiconductor module 1, and a radiator fitted onto the semiconductor module 1. The semiconductor module 1 includes a module casing 2, and common units 3a to 3c retained by the module casing 2. Each of the common units 3a to 3c has: a ceramic substrate 50 having a circuit surface disposed with a semiconductor element 54, and a radiation surface on a side opposite to the circuit surface; and a package 35 that exposes the radiation surface, and seals the circuit surface with heat resistant resin. The radiator is fitted onto the module casing 2 to be thereby brought into abutting contact with all of the radiation surfaces of the common units 3a to 3c. Based on such a configuration, more semiconductor elements can be incorporated in a small-sized lightweight power semiconductor module.

Abstract: [Subject] To provide a thin solar cell module connector having improved reliability, enduring long use, and having high productivity. [Means to Realize the Subject] A diode chip 6 is disposed in a diode module 2. The diode module 2 is transfer-molded. The diode module 2 is fitted in an opening 22 in the module box 20.