Abstract: To provide a rotational force transmission apparatus which can reduce loading on a motor or the like, decrease power or other energy consumption for input, and thereby improve output efficiency. A rotational force transmission apparatus includes an input unit and output unit; means of the output unit for receiving input from the input unit is a gear train made up of gears meshed linearly with each other, the gears including an inner output gear meshed with a stationary gear fixed to axially supporting means of an output shaft of the output unit, a free gear meshed with the inner output gear, and an outer output gear meshed with the free gear; the gear train receives the input from the input unit, revolves integrally along the stationary gear, and thereby rotationally drives the output shaft; and the numbers of teeth of the gears included in the gear train are set such that the free gear will not spin when the gear train revolves along the stationary gear.

Abstract: According to one embodiment, a memory system includes a first memory chip includes a first temporary memory and a first block, a second memory chip includes a second temporary memory and a second block, and a memory controller that controls writing of logical pages to the first and second memory chips. The memory controller forms a second unit having the same page number as the first unit by the first temporary memory and the lowermost physical page in the first block, forms a third unit having the same page number as the first unit by the second temporary memory and the lowermost physical page in the second block, and writes the logical pages by an interleave operation in order of the second unit, the third unit, the first unit in the first block, and the first unit in the second block.

Abstract: A method, and a mobile terminal incorporating the same, of carrying out a reception decision uses a signal received from a base station in the mobile terminal. The mobile terminal includes a communication parameter calculating unit for calculating a communication parameter that is used for estimating a state of a communication environment based on a reception signal transmitted from a base station, a decision parameter setting unit for calculating a decision parameter based on a result of estimation for the state of the communication environment generated by using the communication parameter calculated by the communication parameter calculation unit, and a reception decision unit for carrying out a reception decision of the reception signal based on the decision parameter set by the decision parameter setting unit.

Abstract: A fuel cell electrode material comprising a cermet which comprises metal particles consisting of cobalt and nickel and electrolyte particles consisting of solid oxides, wherein the metal particles comprise 20 to 90 mol % cobalt and the residue of nickel in terms of CoO and NiO, respectively, and a solid oxide fuel cell battery comprising a fuel cell which comprises a solid electrolyte base, a fuel electrode formed on a fuel compartment side of the base, and an air electrode formed on an air compartment side of the base, wherein the fuel electrode is formed from the electrode material of the present invention.

Abstract: Disclosed is a mobile communication terminal employing a code division multiple access scheme, in which when it is decided that the common channel level is equal to or higher than a third threshold (common channel level threshold), an RLF decision control unit compares the SIR data with a first threshold and a second threshold to decide in sync state/out-of sync state between the local spread code and the reception spread code and outputs the decision signal. When it is decided that the common channel level is lower than the third threshold, the first threshold and the second threshold are set to the same value. In this state, when it is decided that the level of the SIR data is lower than the first threshold (=second threshold), the decision signal corresponding to an out-of sync state is output immediately after a predetermined delay time elapses, thereby reducing the power dissipation.

Abstract: Apparatus for gasifying a solid fuel that supplies a solid fuel such as coal by dry condition to a gasification furnace of an entrained-bed type is constructed so as to be able to collect the char discharged from the gasification furnace and re-supply the char to the furnace without using a lock hopper and without changing the char into slurry form. The char discharged from the gasification furnace along with produced gases 53 produced in the gasification furnace is brought into contact with water by a gas cooler 9 and collected. After being dehydrated by a dehydrator 10, the collected char is loaded into a mill 2 or a raw-coal bunker 1. For loading into the raw-coal bunker 1, the char is dried by a drying machine 14, preferably, after the dehydration. According to the present invention, a mixture of the collected char and water can be re-supplied to the gasification furnace without using a lock hopper or a dry feeder.

Abstract: Disclosed is a spin-based semiconductor laser source capable of generating a completely circularly polarized laser light by injecting current into p-type and n-type half-metal magnetic semiconductor layers. Each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by doping a magnetic semiconductor with a transition metal atom and optionally with an acceptor or donor. Alternatively, each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by providing a gate to a magnetic semiconductor and adjusting/controlling its ferromagnetic state according to the field effect. The present invention can solve the problem concerning the insufficient degree of circular polarization in conventional circular-polarization semiconductor laser sources.

Abstract: A single-crystal transparent ferromagnetic compound that transmits light and has significant ferromagnetic properties is selected from the group consisting of alkaline earth chalcogenides, alkali chalcogenides, I-VII compounds, II-VI compounds, III-V compounds, IV-VI2 compounds, IV-IV compounds, and II-VII2 compounds. At least one element having an incomplete outermost p-electron shell, such as B, C, N, O, F, Si, or Ge, is dissolved in the compound so that the compound has a ferromagnetic transition temperature of room temperature or higher. The ferromagnetic properties of the compound are controlled by adjustment of the concentration of the element having an incomplete outermost p-electron shell and valence electron control through, for example, the addition of an acceptor and a donor.

Abstract: Disclosed is a new type of magnetoresistive random-access memory (MRAM) device using a magnetic semiconductor, which is capable of achieving high-integration and energy saving in a simplified structure without any MOS transistor, based on a rectification effect derived from a p-i-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure having a p-type half-metallic ferromagnetic semiconductor, an n-type half-metallic ferromagnetic semiconductor and at least one atomic layer of nonmagnetic insulator interposed therebetween, or a rectification effect derived from a p-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure devoid of the interposed atomic layer of nonmagnetic insulator.

Abstract: The invention provides a coated cutting tool made of cemented carbide in which a hard coating layer has excellent wear resistance in high-speed cutting operation, wherein (a) a crystal orientation hysteresis layer which consists of a carbonitride compound layer and (b) a hard coating layer which consists of a layer of nitride compound and has a well defined crystal orientation and/or degree of crystallinity are formed on the surface of a cemented carbide substrate, preferably on the surface of a tungsten carbide based cemented carbide or titanium carbonitride based cermet by physical vapor deposition, wherein the crystal orientation hysteresis layer is deposited between the surface of a cemented carbide substrate and the hard coating layer. In one specific example, (a1) the carbonitride compound layer has an average thickness of 0.05 to 0.5 ?m and is preferably a Ti—Al carbonitride compound layer expressed by the composition formula as (Ti1?XAlX)(N1?YCY), wherein X ranges from 0.05 to 0.

Abstract: A fuel cell electrode material comprising a porous body, and having an adsorption ability of the order of 0.1 to 10×10?6 mol/m2 for each of methane, carbon monoxide, and hydrogen gases when the adsorption ability is expressed by the number of adsorbed molecules (mol)/the unit area (m2) of the porous body, and a solid oxide fuel cell battery comprising a fuel cell which comprises a solid electrolyte base, a fuel electrode formed on a fuel compartment side of the base, and an air electrode formed on an air compartment side of the base, wherein the fuel electrode is formed from the electrode material of the present invention.

Abstract: A fuel cell electrode material comprising a cermet which comprises metal particles consisting of cobalt and nickel and electrolyte particles consisting of solid oxides, wherein the metal particles comprise 20 to 90 mol % cobalt and the residue of nickel in terms of CoO and NiO, respectively, and a solid oxide fuel cell battery comprising a fuel cell which comprises a solid electrolyte base, a fuel electrode formed on a fuel compartment side of the base, and an air electrode formed on an air compartment side of the base, wherein the fuel electrode is formed from the electrode material of the present invention.

Abstract: Disclosed is a ferromagnetic alkali chalcogen compound capable of providing a completely-spin-polarized transparent ferromagnetic material using an alkali chalcogen compound having light-transparency, and a method of adjusting ferromagnetic properties thereof. The transparent ferromagnetic alkali chalcogenide comprises an alkali chalcogen compound which has an anti-fluorite structure and contains at least one metal element selected from a 3d transition metal element group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu; a 4d transition metal element group consisting of Zr, Nb, Mo, Tc, Ru and Rh; a 5d transition metal element group consisting of Hf, Ta, W, Os, Re and Ir; and a lanthanum-series rare-earth element group consisting of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The selected metal element is incorporated in the alkali chalcogen compound in the form of a solid solution to provide a ferromagnetic characteristic thereto.

Abstract: The ZnO-type compound contains at least one metal selected from a group of transition elements consisting of V, Cr, Fe, Co, Ni, Rh and Ru. Ferromagnetic characteristics are adjusted by adjusting densities of these transition elements, by varying combinations of two or more types of metals including Mn, or by adding dopants. It is consequently possible to obtain a ferromagnetic ZnO-type compound exhibiting ferromagnetic characteristics by using a light-transmitting ZnO-type compound, and to obtain a ferromagnetic ZnO-type compound exhibiting desired ferromagnetic characteristics.

Abstract: A surface-coated cutting tool member includes a tungsten carbide based cemented carbide substrate, a titanium carbonitride based cermet substrate, or a cubic boron nitride based sintered substrate; and a hard coating layer of a nitride compound containing aluminum and titanium, formed on a surface of the substrate using a physical vapor deposition method in an overall average thickness of 1 to 15 ?m. The hard coating layer has a component concentration profile in which maximum aluminum containing points and minimum aluminum containing points appear alternatingly and repeatedly at a distance from 0.01 to 0.1 ?m in a direction of thickness of the hard coating layer. The amount of contained aluminum (or titanium) is changed from the maximum aluminum containing points to the minimum aluminum containing points. The maximum aluminum containing points satisfy a formula: (AlXTi1?X)N, wherein X is between 0.70 to 0.95. The minimum aluminum containing points satisfy a formula: (AlYTi1?Y)N, wherein Y is between 0.

Abstract: Disclosed is a new type of magnetoresistive random-access memory (MRAM) device using a magnetic semiconductor, which is capable of achieving high-integration and energy saving in a simplified structure without any MOS transistor, based on a rectification effect derived from a p-i-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure having a p-type half-metallic ferromagnetic semiconductor, an n-type half-metallic ferromagnetic semiconductor and at least one atomic layer of nonmagnetic insulator interposed therebetween, or a rectification effect derived from a p-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure devoid of the interposed atomic layer of nonmagnetic insulator.

Abstract: It is an object of the invention to provide a portable type electronic apparatus including a hinge portion having a rotating function in a plurality of directions, wherein two casings can be held stably without shaking in a state in which they are opened. A portable type electronic apparatus (101) includes a hinge portion (30) for coupling a first casing (10) and a second casing (20) in such a manner that both of the casings can be opened and closed through a first rotating axis (31) and the first casing (10) can be rotated through a second rotating axis (32) in an orthogonal direction to the first rotating axis (31).

Abstract: A focusing electrode includes an electric field correcting electrode, and a peripheral electrode in which one electron beam passage aperture is formed on a surface opposed to a final-stage accelerating electrode. The final-stage accelerating electrode includes an electric field correcting electrode, and a peripheral electrode in which one electron beam passage aperture is formed on a surface opposed to the focusing electrode.

Abstract: Disclosed is a ferromagnetic group IV-based semiconductor or a ferromagnetic group III-V-based or group II-VI-based compound semiconductor, comprising a group IV-based semiconductor or a group III-V-based or group II-VI-based compound semiconductor, which contains at least one rare-earth metal element selected from the group consisting of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu. The ferromagnetic characteristic of the ferromagnetic semiconductor is controlled by adjusting the concentration of the rare-earth metal element, combining two or more of the rare-earth metal elements or adding a p-type or n-type dopant. The present invention can provide a ferromagnetic group IV-based semiconductor or a ferromagnetic group III-V-based or group II-VI-based compound semiconductor which exhibits light transparency and stable ferromagnetic characteristics.

Abstract: The present invention provides a single-crystal ZnO thin film having a high ferromagnetic transition temperature. In one aspect of the present invention, the ZnO thin film comprises a ferromagnetic p-type single-crystal zinc oxide including a transition metal element consisting of Mn, and a p-type dopant. In another aspect of the present invention, the thin film comprises a ferromagnetic p-type single-crystal zinc oxide including a transition metal element consisting of Mn, a p-type dopant, and an n-type dopant. The single-crystal zinc oxide material can be applied to quantum computers and high-capacity magnetic-optical recording medium by combining with conventional n-type or p-type transparent electrode ZnO materials or optical fibers, and to powerful information-communication devices or quantum computers as a photoelectric material usable for a wide range from visible light to ultraviolet light.