Patents by Inventor Kazunori Zaima

Kazunori Zaima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR PROCESSING FILM
    Publication number: 20230097622
    Abstract: A method for manufacturing a semiconductor device includes forming a first film on a substrate, forming a second film on the first film, and forming a second recessed portion in the second film. The method further includes forming a third film on a side surface of the second film in the second recessed portion, and processing the second or third film in the second recessed portion. The method further includes processing the first film from the second recessed portion to form a first recessed portion in the first film, after processing the second or third film.
    Type: Application
    Filed: March 4, 2022
    Publication date: March 30, 2023
    Inventor: Kazunori ZAIMA
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20220384180
    Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.
    Type: Application
    Filed: August 2, 2022
    Publication date: December 1, 2022
    Applicant: Kioxia Corporation
    Inventors: Takaya ISHINO, Atsushi Takahashi, Kazunori Zaima
  • Method of manufacturing semiconductor device
    Patent number: 11437232
    Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: September 6, 2022
    Assignee: Kioxia Corporation
    Inventors: Takaya Ishino, Atsushi Takahashi, Kazunori Zaima
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20190189423
    Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.
    Type: Application
    Filed: August 9, 2018
    Publication date: June 20, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Takaya Ishino, Atsushi Takahashi, Kazunori Zaima