Abstract: A superlattice film is formed by introducing a mixture of a first gas reactant capable of only plasma-excited chemical reaction and a second gas reactant capable of both plasma-excited chemical reactions into a reaction chamber, discontinuously carrying out plasma-excited chemical reaction, and continuously carrying out light-excited chemical reaction, thereby alternately depositing on a substrate a thin film layer which is formed when the plasma- and light-excited chemical reactions are carried out and another thin film layer which is formed when the plasma-excited chemical reaction is interrupted, thereby forming a thin film of alternately deposited layers.

Abstract: The present invention provides a manufacturing method of a conductive or superconductive thin film of mixed oxide as an easier way to apply the mixed oxide type superconductive materials to electronic devices, etc. The manufacturing method of the present invention comprises using a mixed oxide composition showing conductivity or superconductivity as a target material and sputtering it onto a substrate to form a thin film. Examples of the mixed oxide compositions showing conductivity or superconductivity and to be used as the target material in the present invention are mixed oxides consisting of lanthanoid, alkali earth metal and copper as main components, particularly, a mixed oxide consisting essentially of La-Sr-Cu-O, La-Ba-Cu-O, La-Ca-Cu-O etc. or mixtures thereof, materials containing a small quantity of other metal oxide(s), or mixed oxides mainly consisting of Yb-Ba-Cu-O, Er-Ba-Cu-O, Ho-Ba-Cu-O, Tm-Ba-Cu-O or mixtures thereof.