Patents by Inventor Kazuo Hujie

Kazuo Hujie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7951716
    Abstract: A wafer is produced at a step of polishing a predetermined face of a wafer to flatten the predetermined face while supplying a polishing liquid onto a bonded abrasive cloth, wherein the bonded abrasive cloth comprises a urethane bonding material consisting of a soft segment having a polyfunctional isocyanate and a hard segment having a polyfunctional polyol and having an expansion ratio of 1.1-4 times and silica having an average particle size of 0.2-10 ?m and a hydroxy group, and has a given ratio of the hard segment occupied in the urethane bonding material, a given volume ratio of silica and a given Shore D hardness.
    Type: Grant
    Filed: February 16, 2007
    Date of Patent: May 31, 2011
    Assignee: Sumco Corporation
    Inventors: Etsurou Morita, Kazuo Hujie, Isoroku Ono
  • Patent number: 7718507
    Abstract: A bonded wafer is produced by bonding an ion-implanted wafer for an active layer onto a wafer for a supporting substrate, and thereafter exfoliating the wafer for the active layer at the ion-implanted position through a heat treatment and then polishing a terrace portion of the resulting active layer with a predetermined fixed grain abrasive cloth to remove island-shaped projections on the terrace portion while controlling a scattering of terrace width and smoothness of an outer peripheral face of the active layer.
    Type: Grant
    Filed: March 8, 2007
    Date of Patent: May 18, 2010
    Assignee: Sumco Corporation
    Inventors: Etsurou Morita, Kazuo Hujie, Isoroku Ono
  • Publication number: 20070243694
    Abstract: A bonded wafer is produced by bonding an ion-implanted wafer for an active layer onto a wafer for a supporting substrate, and thereafter exfoliating the wafer for the active layer at the ion-implanted position through a heat treatment and then polishing a terrace portion of the resulting active layer with a predetermined fixed grain abrasive cloth to remove island-shaped projections on the terrace portion while controlling a scattering of terrace width and smoothness of an outer peripheral face of the active layer.
    Type: Application
    Filed: March 8, 2007
    Publication date: October 18, 2007
    Inventors: Etsurou Morita, Kazuo Hujie, Isoroku Ono
  • Publication number: 20070197035
    Abstract: A wafer is produced at a step of polishing a predetermined face of a wafer to flatten the predetermined face while supplying a polishing liquid onto a bonded abrasive cloth, wherein the bonded abrasive cloth comprises a urethane bonding material consisting of a soft segment having a polyfunctional isocyanate and a hard segment having a polyfunctional polyol and having an expansion ratio of 1.1-4 times and silica having an average particle size of 0.2-10 ?m and a hydroxy group, and has a given ratio of the hard segment occupied in the urethane bonding material, a given volume ratio of silica and a given Shore D hardness.
    Type: Application
    Filed: February 16, 2007
    Publication date: August 23, 2007
    Applicant: SUMCO CORPORATION
    Inventors: Etsurou Morita, Kazuo Hujie, Isoroku Ono