Abstract: A bonding device includes an irradiator that irradiates a surface of a first component with ultraviolet rays, and a conveyor that conveys the first component, wherein the irradiator irradiates the first component held by the conveyor with the ultraviolet ray, and the conveyor conveys the first component irradiated with the ultraviolet rays to a surface of a second component, and brings the surface of the first component and the surface of the second component into contact with each other to bond the first component and the second component.

Abstract: An optical semiconductor module in which displacement resulting from fixation of lenses is effectively corrected includes a first lens (102), a second lens (103), and a third lens (104) arranged between a semiconductor laser (101) and a semiconductor optical modulator (105). The first lens (102) and the second lens (103) form a collimate lens optical system. The first lens (102) converts light emitted by the semiconductor laser (101) into parallel light rays. The second lens (103) focuses the parallel light rays on the semiconductor optical modulator (105) to couple the light rays to the semiconductor optical modulator (105). The third lens (104) has a longer focal distance than the first and second lenses. Thus, displacement of the lenses resulting from fixation thereof can be corrected by adjusting in position and fixing the first and second lenses (102, 103) and then adjusting in position and fixing the third lens.

Abstract: An optical functional device includes a semiconductor substrate, an optical functional layer provided on said semiconductor substrate and selected from the group consisting of a light emitting layer, a light absorbing layer, and an optical waveguide layer. The optical functional layer has a multi-quantum well layer. Preferably, the semiconductor substrate is a nonplanar semiconductor substrate having a ridge and two grooves adjacent said ridge, said ridge having a ridge width of from 1 to 10 .mu.m, a ridge height of from 1 .mu.m to 5 .mu.m, and a gap distance of from 1 .mu.m to 10 .mu.m. Such an optical functional device can be fabricated by growing, on a nonplanar semiconductor substrate having a specified dimension of the ridge, a strained multi-quantum well layer by metalorganic vapor phase epitaxy. Integrated optical device or circuit preferably includes an optical functional device on the nonplanar semiconductor substrate of a specified range of ridge shape factors.

Abstract: An optical functional device includes a semiconductor substrate, an optical functional layer provided on said semiconductor substrate and selected from the group consisting of a light emitting layer, a light absorbing layer, and an optical waveguide layer. The optical functional layer has a multi-quantum well layer. Preferably, the semiconductor substrate is a nonplanar semiconductor substrate having a ridge and two grooves adjacent said ridge, said ridge having a ridge width of from 1 to 10 .mu.m, a ridge height of from 1 .mu.m to 5 .mu.m, and a gap distance of from 1 .mu.m to 10 .mu.m. Such an optical functional device can be fabricated by growing, on a nonplanar semiconductor substrate having a specified dimension of the ridge, a strained multi-quantum well layer by metalorganic vapor phase epitaxy. Integrated optical device or circuit preferably includes an optical functional device on the nonplanar semiconductor substrate of a specified range of ridge shape factors.