Abstract: A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.

Abstract: A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.

Abstract: A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.

Abstract: A method for manufacturing a semiconductor substrate according to the present invention includes preparing a seed substrate containing a semiconductor material, forming an ion implanted layer at a certain depth from a front surface of a main surface of the seed substrate by implanting ions into the seed substrate, growing a semiconductor layer on the main surface of the seed substrate with a vapor-phase synthesis method, and separating a semiconductor substrate including the semiconductor layer and a part of the seed substrate by irradiating the front surface of the main surface of at least any of the semiconductor layer and the seed substrate with light.

Abstract: A low-loss compact and a method for producing the compact are provided. A method for producing a compact by using coated soft magnetic powder that includes coated soft magnetic particles constituted by soft magnetic particles and insulating coatings coating outer peripheries of the soft magnetic particles includes a raw material preparation step and an irradiation step. In the raw material preparation step, a raw compact is prepared by press-forming coated soft magnetic powder. In the irradiation step, part of a surface of the raw compact is irradiated with a laser. Irradiating a part of a surface of a raw compact with laser increases the number of disrupted portions of conductive portions where constituent materials of the soft magnetic particles at the surface of the raw compact have become conductive to each other, and the loss of the compact can be decreased.

Abstract: A method for manufacturing a semiconductor substrate according to the present invention includes preparing a seed substrate containing a semiconductor material, forming an ion implanted layer at a certain depth from a front surface of a main surface of the seed substrate by implanting ions into the seed substrate, growing a semiconductor layer on the main surface of the seed substrate with a vapor-phase synthesis method, and separating a semiconductor substrate including the semiconductor layer and a part of the seed substrate by irradiating the front surface of the main surface of at least any of the semiconductor layer and the seed substrate with light.

Abstract: A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.

Abstract: A cutting tool includes a portion made of a high hardness material. The portion includes a rake face, a flank face, and a cutting edge. The rake face is divided into a region A along the cutting edge and a region B excluding the region A of the rake face, a surface roughness of the region A is smaller than a surface roughness of the region B, and the region B is deepened with respect to a position of the region A.

Abstract: Provided is a technology for manufacturing cutting tools that is capable of providing cutting tools that have a cut surface whose surface is uniformly smooth and that have a stable performance.

Abstract: A low-loss compact and a method for producing the compact are provided. A method for producing a compact by using coated soft magnetic powder that includes coated soft magnetic particles constituted by soft magnetic particles and insulating coatings coating outer peripheries of the soft magnetic particles includes a raw material preparation step and an irradiation step. In the raw material preparation step, a raw compact is prepared by press-forming coated soft magnetic powder. In the irradiation step, part of a surface of the raw compact is irradiated with a laser. Irradiating a part of a surface of a raw compact with laser increases the number of disrupted portions of conductive portions where constituent materials of the soft magnetic particles at the surface of the raw compact have become conductive to each other, and the loss of the compact can be decreased.

Abstract: A cutting tool includes a portion made of a high hardness material. The portion includes a rake face, a flank face, and a cutting edge. The rake face is divided into a region A along the cutting edge and a region B excluding the region A of the rake face, a surface roughness of the region A is smaller than a surface roughness of the region B, and the region B is deepened with respect to a position of the region A.

Abstract: Provided is a technology for manufacturing cutting tools that is capable of providing cutting tools that have a cut surface whose surface is uniformly smooth and that have a stable performance.

Abstract: The present invention relates to a laser processing method and the like which use no wavelength conversion technique by nonlinear optical crystals when selectively removing an insulating layer of a printed board, while employing only one wavelength throughout the entire removal processing. A laser processing apparatus (1), preferably used in the laser processing method, has a MOPA structure and comprises a seed light source (100), a YbDF (110), a bandpass filter (120), a YbDF (130), a bandpass filter (140), a YbDF (150), a YbDF (160), and so forth.

Abstract: A low-loss compact and a method for producing the compact are provided. A method for producing a compact by using coated soft magnetic powder that includes coated soft magnetic particles constituted by soft magnetic particles and insulating coatings coating outer peripheries of the soft magnetic particles includes a raw material preparation step and an irradiation step. In the raw material preparation step, a raw compact is prepared by press-forming coated soft magnetic powder. In the irradiation step, part of a surface of the raw compact is irradiated with a laser. Irradiating a part of a surface of a raw compact with laser increases the number of disrupted portions of conductive portions where constituent materials of the soft magnetic particles at the surface of the raw compact have become conductive to each other, and the loss of the compact can be decreased.

Abstract: The present invention relates to a laser marking method which is capable of changing the grey level of a marking even in the case of a high processing speed. The laser marking method forms a marking pattern on a marking object by irradiating the marking object with pulsed light oscillated from a pulsed light source of a MOPA structure in which a semiconductor laser outputting directly-modulated pulsed light is used as a seed light source. At this time, the pulse duration of the pulsed light is changed in order to change a gray level of the marking pattern to be formed. In this way, a peak power of the pulsed light is changed by changing the pulse duration, so that it is possible to positively change the gray level of the marking pattern without changing the processing speed.

Abstract: The present invention relates to a laser processing method and the like provided with a structure for enabling realization of both preferable processing of locations not easily reached by laser light and effective inhibition of damage caused to locations easily reached by laser light during laser processing. Radiation optics scan locations irradiated with laser light from a laser light source while radiating laser light onto a plurality of objects arranged on a stage and the periphery thereof from a direction perpendicular to the stage. On the stage reflecting members are respectively arranged adjacent to the plurality of objects. The reflecting members reflect laser light radiated from the radiation optics towards lateral surfaces of the objects. Since laser light reflected by the reflecting members is radiated onto the lateral surfaces of the objects, laser light also reaches the lateral surfaces of the objects not easily reached by laser light without having to increase the intensity of the laser light.

Abstract: The present invention relates to a light source apparatus or the like provided with a structure that can block reflected return light also when an emitting end side of an optical isolator is a space. The light source apparatus comprises a light source section, a guide section, and an optical module. The optical module includes a collimator, an optical isolator, and an oblique-beam blocking section. The collimator outputs collimated light with a predetermined beam diameter as a forward propagating beam. The optical isolator is a polarization-independent optical isolator that introduces the collimated light from a first end and outputs this collimated light from a second end.

Abstract: The present invention relates to a laser processing method and the like having a structure for making it possible to process an object to be processed in various ways while accurately adjusting the installation state of the object. The method irradiates the object with plural adjustment laser light beams that are set in a specific positional relationship against a converging point of processing laser light beam, and adjusts the state of installation of the object while monitoring irradiation areas of the adjustment laser light beams on the surface of the object. Each irradiation directions of adjustment laser light beams is different from that of the processing laser light beam. By reflecting the irradiation condition of the adjustment laser light beam and monitored information of the irradiation areas in positional adjustment of the object, the installation state of the object can be adjusted in accordance with various kinds of processing.

Abstract: The present invention relates to a laser welding method of welding an electrode and a cable core to each other satisfactory by irradiation of a laser beam, even when the core is thin and the area of the electrode is small. The laser welding method welds on a substrate the electrode and the core of a coaxial cable to each other by irradiation of the laser beam. The core is sandwiched between a pressing member and the electrode, while the electrode and the core are brought into contact with each other at a connection section. The pressing member is a member that is transparent to the processing laser beam. A part of the core is molten by radiating the laser beam from the pressing member side. As a result, the electrode and the core are connected with each other.

Abstract: The present invention relates to a laser processing apparatus and the like having a structure for implementing at the same time both an efficient laser processing in the place where a laser beam is difficult to reach and a laser processing without damages in the place where the laser beam is easy to reach. This laser processing apparatus comprises a laser light source, an irradiation optical system applying a laser beam to an object while scanning the laser beam, a photo-detector detecting the laser beam applied from the irradiation optical system, and a control section of making switching between a continuous oscillation and a pulse oscillation of the laser beam at the laser light source.