Abstract: The present invention provides a power supply unit (regulator circuit) capable of preventing thermal breakdown of a driven transistor that may be caused accidentally in case the collector output of the transistor is grounded. A power supply unit (10) for supplying a driving current to a base of a transistor (20) to thereby drive the same has a lower threshold comparator (14) which compares an actual collector output Vin of the transistor (20) with a lower threshold of 0.5 Vref, and sends a stop signal to a current controller (18) if the collector output Vin is less than the lower threshold of 0.5 Vref. Thus, when the collector output of the transistor (20) is grounded directly without via a load circuit (40), the collector output Vin is rendered under the lower threshold of 0.5 Vref, so that the current controller (18) receives the stop signal from the lower threshold comparator (14) and then stops the supply of the driving current to the transistor (20).

Abstract: There is provided a reactor internal equipment hoisting apparatus which is hung down from an upper side of a reactor pressure vessel to hoist reactor internal equipment installed inside the reactor pressure vessel. The hoisting apparatus includes a supporting unit which is hung down from the upper side of the reactor pressure vessel with an overhead travailing crane installed on the ceiling of the reactor building, and an elevating unit which is arranged below the supporting unit. A coupling/fixing unit is provided to the elevating unit to be releasably coupled with a hoisting lug. Power hoist using a wire rope or a chain is provided to the supporting unit. The elevating unit is hung down from the supporting unit via the rope or the chain to be moved vertically. This reactor internal equipment hoisting apparatus is easy in maintenance and storage.

Abstract: A method for manufacturing an EEPROM comprises the step of using raw gas containing an organic compound having a molecular weight of more than 44, such as ethyl acetate and tetrahydrofuran when a first polysilicon layer serving as a select gate electrode and a second polysilicon layer serving as a floating gate electrode are deposited by a CVD process. The above described step allows a voltage at the time of tunneling electrons to be decreased.

Abstract: A method for manufacturing an EEPROM comprises the step of using raw gas containing an organic compound having a molecular weight of more than 44, such as ethyl acetate and tetrahydrofuran when a first polysilicon layer serving as a select gate electrode and a second polysilicon layer serving as a floating gate electrode are deposited by a CVD process. The above described step allows a voltage at the time of tunneling electrons to be decreased.