Abstract: A semiconductor substrate is secured by suction to a rear face of a supporting face of a substrate supporting table. In this event, the thickness of the semiconductor substrate is made fixed by planarization on the rear face, and the rear face is forcibly brought into a state free from undulation by the suction to the supporting face, so that the rear face becomes a reference face for planarization of a front face. In this state, a tool is used to cut surface layers of Au projections and a resist mask on the front face, thereby planarizing the Au projections and the resist mask so that their surfaces become continuously flat. This can planarize the surfaces of fine bumps formed on the substrate at a low cost and a high speed in place of CMP.

Abstract: To provide a bonding apparatus capable of increasing product quality by realizing high-precision control of a pressing force applied upon mounting of an electronic component on a substrate by bonding, and to a bonding method capable of providing high-quality products stably. The bonding apparatus includes: at least a bonding head 100 for pressing an electronic component 6 against a substrate 1 to bond it to the substrate 1; a plurality of load detection mechanisms (e.g., load sensors 5) substantially equally spaced so as to face one another under a substrate stage S supporting the substrate 1 provided with the electronic component 6; and a pressure detection unit 20 for detecting pressing force at the bonding surface between the electronic component 6 and substrate 1 on the basis of the pressure values detected by the individual load detection mechanisms 5.

Abstract: A semiconductor substrate is secured by suction to a rear face of a supporting face of a substrate supporting table. In this event, the thickness of the semiconductor substrate is made fixed by planarization on the rear face, and the rear face is forcibly brought into a state free from undulation by the suction to the supporting face, so that the rear face becomes a reference face for planarization of a front face. In this state, a tool is used to cut surface layers of Au projections and a resist mask on the front face, thereby planarizing the Au projections and the resist mask so that their surfaces become continuously flat. This can planarize the surfaces of fine bumps formed on the substrate at a low cost and a high speed in place of CMP.

Abstract: To provide a bonding apparatus capable of increasing product quality by realizing high-precision control of a pressing force applied upon mounting of an electronic component on a substrate by bonding, and to a bonding method capable of providing high-quality products stably. The bonding apparatus includes: at least a bonding head 100 for pressing an electronic component 6 against a substrate 1 to bond it to the substrate 1; a plurality of load detection mechanisms (e.g., load sensors 5) substantially equally spaced so as to face one another under a substrate stage S supporting the substrate 1 provided with the electronic component 6; and a pressure detection unit 20 for detecting pressing force at the bonding surface between the electronic component 6 and substrate 1 on the basis of the pressure values detected by the individual load detection mechanisms 5.

Abstract: A method for manufacturing a semiconductor device includes adhering an adhesive layer of a surface protective tape including a base material film, an intermediate layer disposed on the base material film, and the adhesive layer disposed on the intermediate layer to one surface of a semiconductor substrate; curing the intermediate layer while a flat plate is pressed against the base material film of the surface protective tape; grinding the other surface of the semiconductor substrate; curing the adhesive layer; and separating the surface protective tape from the semiconductor substrate.

Abstract: A method of manufacturing a semiconductor device includes spraying fluid onto a surface of a treatment target substrate including a semiconductor substrate; forming a protection layer on the surface of the treatment target substrate after spraying the fluid; selectively removing the protection layer and a part of the treatment target substrate by an energy beam; and conducting removal processing on an area of the treatment target substrate from which the protection layer and the part of the treatment target substrate are selectively removed.

Abstract: A film bonding method of bonding a die bond film without causing any breakage. The die bond film is pressed against a wafer having a surface protective tape bonded thereto using a film-setting roller and a film-bonding roller, and a laser beam having a predetermined shape is irradiated to an area between the rollers. While rotationally moving the film-setting roller and the film-bonding roller, the laser beam is scanned on the wafer in accordance with their motion, and a portion of the die bond film, melted by the laser beam, is pressed against the wafer by the film-bonding roller following the film-setting roller to bond the die bond film to the wafer. Since the die bond film is bonded to the wafer by melting the same by the laser beam, even if the wafer is thin and reduced in its strength, it is possible to avoid the wafer from being damaged e.g. by thermal contraction of the surface protective tape.

Abstract: A method for manufacturing a semiconductor device includes adhering an adhesive layer of a surface protective tape including a base material film, an intermediate layer disposed on the base material film, and the adhesive layer disposed on the intermediate layer to one surface of a semiconductor substrate; curing the intermediate layer while a flat plate is pressed against the base material film of the surface protective tape; grinding the other surface of the semiconductor substrate; curing the adhesive layer; and separating the surface protective tape from the semiconductor substrate.

Abstract: To provide a bonding apparatus capable of increasing product quality by realizing high-precision control of a pressing force applied upon mounting of an electronic component on a substrate by bonding, and to a bonding method capable of providing high-quality products stably. The bonding apparatus includes: at least a bonding head 100 for pressing an electronic component 6 against a substrate 1 to bond it to the substrate 1; a plurality of load detection mechanisms (e.g., load sensors 5) substantially equally spaced so as to face one another under a substrate stage S supporting the substrate 1 provided with the electronic component 6; and a pressure detection unit 20 for detecting pressing force at the bonding surface between the electronic component 6 and substrate 1 on the basis of the pressure values detected by the individual load detection mechanisms 5.

Abstract: A semiconductor wafer storage case is disclosed that includes plural support members that are spaced at predetermined intervals with respect to each other and are each configured to come into contact with a peripheral edge region of a first face of a semiconductor wafer, and an elastic member that elastically supports the support members with respect to each other and is configured to elastically deform to come into contact with a second face of the semiconductor wafer and press the semiconductor wafer onto a corresponding support member.

Abstract: A manufacturing method of a semiconductor device includes providing an adhesive on a supporting board, the supporting board being where a semiconductor element is to be mounted; providing a member configured to block flow of the adhesive on a first main surface of the semiconductor element, the semiconductor element having a second main surface where an outside connection terminal is provided; mounting the semiconductor element on a part of the supporting board where the adhesive is provided by pressing the semiconductor element via the member.

Abstract: A substrate support (201) having a flat supporting surface (201a) is prepared, and a semiconductor substrate (1) is fixed to the substrate supporting surface (201) by attaching a wiring forming surface (1a) to the supporting surface (201a) by suction, for example, by vacuum suction. On this occasion, the wiring forming surface (1a) is forcibly flattened by being attached to the supporting surface (201a) by suction, and therefore the wiring forming surface (1a) becomes a reference plane for planarization of a back surface (1b). In this state, planarization processing is performed by mechanically grinding the back surface (1b) to grind away projecting portions (12) of the back surface (1b). Hence, variations in the thickness of the substrate (especially, semiconductor substrate) are made uniform, and high-speed planarization is realized easily and inexpensively without disadvantages such as dishing and without any limitation on a wiring design.

Abstract: A manufacturing method of a semiconductor device, includes i) a step of providing a transparent member above a main surface of a semiconductor substrate where a plurality of semiconductor elements is formed; ii) a first dividing step of dividing the transparent member corresponding to a designated area of the semiconductor element; iii) a second dividing step of dividing the transparent member corresponding to an external configuration of the semiconductor element; and iv) a dividing step of dividing the semiconductor substrate into the semiconductor elements corresponding to a dividing position of the transparent member.

Abstract: A substrate support (201) having a flat supporting surface (201a) is prepared, and a semiconductor substrate (1) is fixed to the substrate supporting surface (201) by attaching a wiring forming surface (1a) to the supporting surface (201a) by suction, for example, by vacuum suction. On this occasion, the wiring forming surface (1a) is forcibly flattened by being attached to the supporting surface (201a) by suction, and therefore the wiring forming surface (1a) becomes a reference plane for planarization of a back surface (1b). In this state, planarization processing is performed by mechanically grinding the back surface (1b) to grind away projecting portions (12) of the back surface (1b). Hence, variations in the thickness of the substrate (especially, semiconductor substrate) are made uniform, and high-speed planarization is realized easily and inexpensively without disadvantages such as dishing and without any limitation on a wiring design.

Abstract: A method of manufacturing a semiconductor device includes spraying fluid onto a surface of a treatment target substrate including a semiconductor substrate; forming a protection layer on the surface of the treatment target substrate after spraying the fluid; selectively removing the protection layer and a part of the treatment target substrate by an energy beam; and conducting removal processing on an area of the treatment target substrate from which the protection layer and the part of the treatment target substrate are selectively removed.

Abstract: The present invention relates to a Jig and method of manufacturing a semiconductor substrate including the back grind step, the dicing step, the pick up step, and the die bonding step of the wafer; and to a semiconductor substrate jig used in such method. The object of the present invention is to mitigate the effect and to prevent damage caused by the lack of strength in thinned semiconductor substrates. A jig with an outer frame 21, and a rubber film 22 arranged within the outer frame 21 and having increasing and decreasing body size while deforming its shape by supplying air therein are provided. As the volume of the rubber film 22 increases, the wafer-fixing jig 20 deforms the rubber film and allows the tapes 2 and 6 arranged between the wafer 1 and the rubber film 22A to be pushed toward the wafer 1 gradually from the center outward. The attachment step, the back grind step, the tape reapplication step, the pick up step and the die bonding step are conducted using such wafer-fixing jig.

Abstract: A manufacturing method of a semiconductor device includes providing an adhesive on a supporting board, the supporting board being where a semiconductor element is to be mounted; providing a member configured to block flow of the adhesive on a first main surface of the semiconductor element, the semiconductor element having a second main surface where an outside connection terminal is provided; mounting the semiconductor element on a part of the supporting board where the adhesive is provided by pressing the semiconductor element via the member.

Abstract: A semiconductor substrate (1) is secured by suction to a rear face (1b) of a supporting face (11a) of a substrate supporting table (11). In this event, the thickness of the semiconductor substrate (1) is made fixed by planarization on the rear face (1b), and the rear face (1b) is forcibly brought into a state free from undulation by the suction to the supporting face (11a), so that the rear face (1b) becomes a reference face for planarization of a front face (1a). In this state, a tool (10) is used to cut surface layers of Au projections (2) and a resist mask (12) on the front face (1a), thereby planarizing the Au projections (2) and the resist mask (12) so that their surfaces become continuously flat. This can planarize the surfaces of fine bumps formed on the substrate at a low cost and a high speed in place of CMP.

Abstract: In a film lamination apparatus and method, there is no one-side contact of a pressing roller that presses a film to be laminated. The film is laminated using a rotatable pressing roller having a heater incorporated therein. The pressing roller is pressed onto the film placed on a semiconductor substrate while generating heat by the heater inside the pressing roller. The pressing roller is rolled on the film so as to laminate the film on the semiconductor substrate by partially heating the film by the pressing roller while moving the pressing roller.

Abstract: A substrate support (201) having a flat supporting surface (201a) is prepared, and a semiconductor substrate (1) is fixed to the substrate supporting surface (201) by attaching a wiring forming surface (1a) to the supporting surface (201a) by suction, for example, by vacuum suction. On this occasion, the wiring forming surface (1a) is forcibly flattened by being attached to the supporting surface (201a) by suction, and therefore the wiring forming surface (1a) becomes a reference plane for planarization of a back surface (1b). In this state, planarization processing is performed by mechanically grinding the back surface (1b) to grind away projecting portions (12) of the back surface (1b). Hence, variations in the thickness of the substrate (especially, semiconductor substrate) are made uniform, and high-speed planarization is realized easily and inexpensively without disadvantages such as dishing and without any limitation on a wiring design.