Abstract: A detecting device (1) detects a combustion state of an internal combustion engine (2) that transmits power via a crankshaft (11). The detecting device (1) includes a calculation unit (1b) that calculates a mass burn fraction by detecting a crank angle, on the basis of a frequency component showing a state change amount of a state change of a detection target according to a change in a cylinder pressure depending on a combustion cycle of the engine (2), and including a harmonic wave component of a fundamental wave of the frequency component.

Abstract: A detecting device (1) detects a combustion state of an internal combustion engine (2) that transmits power via a crankshaft (11). The detecting device (1) includes a calculation unit (1b) that calculates a mass burn fraction by detecting a crank angle, on the basis of a frequency component showing a state change amount of a state change of a detection target according to a change in a cylinder pressure depending on a combustion cycle of the engine (2), and including a harmonic wave component of a fundamental wave of the frequency component.

Abstract: An apparatus for producing seedlings, wherein rootstocks and scions are nursed on multi-staged seedling culture shelves installed in a closed-type structure surrounded by light-interceptive walls, and wherein the rootstocks and scions are joined to each other to produce grafted seedlings. The grafted seedlings are placed on shelf boards of the seedling culture shelves and covered with a light-transmitting shield including vent holes, and light is projected onto the grafted seedlings through the light-transmitting shield to weld the seedlings. The relative humidity in the light-transmitting shield immediately after the grafting is raised by the evaporation of moisture from the rootstocks and the scions. When photosynthesis is stimulated, gas exchange between the carbon dioxide gas-containing atmosphere within the closed type structure and the atmosphere within the light-transmitting shield are accomplished to replenish an inner space of the light-transmitting shield with carbon dioxide gas.

Abstract: Provided is a metal double-layer structure in which a modified metallic member modified from a flat plate metallic member is bonded to be stuck to a plate material, manufacturing method thereof, and a method of regenerating a sputtering target using the method. The method includes the steps of: overlapping the plate material with the metallic member; inserting a rotary tool having a rotor and a probe projecting from a bottom surface of the rotor into a surface of the metallic member while rotated; bringing a distal end of the probe to a position close to a mating plane between the metallic member and the plate material to generate friction heat and stir the distal end, and moving the rotary tool to form adjacent motion tracks on the surface of the metallic member; and forming stirred areas along the mating plane to bond the metallic member and the plate material together, and modifying the metallic member into a modified metallic member.

Abstract: A method for SAC etching is provided involving a) etching a Si wafer having a nitride present thereon with a first etching gas containing a first perfluorocarbon and carbon monoxide, and b) etching the resultant Si wafer having an initially etched nitride photoresist thereon with a second etching gas containing a second perfluorocarbon in the substantial absence of carbon monoxide, wherein the etching steps a) and b) are performed at high RF power and low pressure compared to conventional processes to provide higher selectivity etching and a larger process window for SAC etching, as well as the ability to perform SAC etching and island contact etching under the same conditions with high verticality of the island contact and SAC walls.

Abstract: A system for transplant production comprises: at least one air conditioner installed in a completely light shielding closed structure surrounded by a thermally insulated wall, for controlling temperature and humidity of air in the closed structure; at least one box-shaped culturing module disposed in an internal space of the closed structure, having a front face opening which is opened to the internal space of the closed structure; a plurality of transplant production shelves arranged vertically in a multi-layer in the culturing module to form a transplant production space between upper and lower transplant production shelves; a plurality of plug trays for holding a plant growing medium mounted on each transplant production shelf; a sub-irrigation unit capable of irrigation from a bottom of the plug trays mounted on each transplant production shelf; an artificial lighting unit provided on a back of each transplant production shelf for irradiating light to the lower plug trays; and at least one air fan fixed t

Abstract: It is intended to provide an apparatus for producing seedlings and a method therefor whereby, in producing grafted seedlings of fruit vegetables, a process from the culture of their stocks (rootstocks and scions) to welding after the grafting can be accomplished in a consistent process at low cost. Rootstocks and scions are nursed on multi-staged seedling culture shelves 3 installed in a closed-type structure surrounded by light-interceptive thermally insulating walls, and then these rootstocks and scions are joined to each other to produce grafted seedlings 8. Then, these grafted seedlings 8 are placed on shelf boards 3a of the seedling culture shelves and covered with a light-transmitting shield 9 provided with vent holes 15, and light of a predetermined luminous intensity is projected onto these grafted seedlings from fluorescent lamps 5 through the light-transmitting shield to weld the grafted seedlings 8.

Abstract: A system for transplant production comprising: at least one air conditioner installed in a completely light shielding closed structure surrounded by a thermally insulated wall, the air conditioner controlling the temperature and humidity of air in the closed structure; at least one box-shaped culturing module disposed in the internal space of the closed structure, the culturing module having a front face opening which is opened to the internal space of the closed structure; a plurality of transplant production shelves arranged vertically in multi-layer in the culturing module to form a transplant production space between the upper and lower transplant production shelves; a plurality of plug trays for holding a plant growing medium mounted on each transplant production shelf; a sub-irrigation unit capable of irrigation from the bottom of the plug trays mounted on each transplant production shelf; an artificial lighting unit provided on the back of each transplant production shelf, the artificial lighting unit

Abstract: A method for SAC etching is provided involving a) etching a Si wafer having a nitride present thereon with a first etching gas containing a first perfluorocarbon and carbon monoxide, and b) etching the resultant Si wafer having an initially etched nitride photoresist thereon with a second etching gas containing a second perfluorocarbon in the substantial absence of carbon monoxide, wherein the etching steps a) and b) are performed at high RF power and low pressure compared to conventional processes to provide higher selectivity etching and a larger process window for SAC etching, as well as the ability to perform SAC etching and island contact etching under the same conditions with high verticality of the island contact and SAC walls.

Abstract: A method for SAC etching is provided involving a) etching a Si wafer having a nitride present thereon with a first etching gas containing a first perfluorocarbon and carbon monoxide, and b) etching the resultant Si wafer having an initially etched nitride photoresist thereon with a second etching gas containing a second perfluorocarbon in the substantial absence of carbon monoxide, wherein the etching steps a) and b) are performed at high RF power and low pressure compared to conventional processes to provide higher selectivity etching and a larger process window for SAC etching, as well as the ability to perform SAC etching and island contact etching under the same conditions with high verticality of the island contact and SAC walls.

Abstract: A method for SAC etching is provided involving a) etching a Si wafer having a nitride present thereon with a first etching gas containing a first perfluorocarbon and carbon monoxide, and b) etching the resultant Si wafer having an initially etched nitride photoresist thereon with a second etching gas containing a second perfluorocarbon in the substantial absence of carbon monoxide, wherein the etching steps a) and b) are performed at high RF power and low pressure compared to conventional processes to provide higher selectivity etching and a larger process window for SAC etching, as well as the ability to perform SAC etching and island contact etching under the same conditions with high verticality of the island contact and SAC walls.

Abstract: An information processing apparatus that can adjust the scrolling speed for data displayed in an application window on a display and display a visual scrolling speed indicator. When the user manipulates a mouse to request scrolling of data in a window, the display form of the mouse cursor is changed. That is, in addition to the mouse cursor, one or more speed indicators appears in the scrolling direction. The number of speed indicators which are displayed corresponds to the scrolling speed. The speed indicators are arranged from the center of the mouse cursor in the scrolling direction. A speed indicator is shaped like a small isosceles triangle, and as its vertex is facing in the scrolling direction, it is a very effective visual aid for a user. Preferably, one speed indicator is displayed for a low scrolling speed, two for a moderate scrolling speed and three for a high speed scrolling.

Abstract: A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhausting the clearance through the first passage, a second passage opened in the top of the suscepter at a center area thereof, a second gas supply source for supplying heat exchange gas into the clearance through the second passage, a second vacuum pump for exhausting the clearance through the second passage, and a controller for controlling the first and second gas supply sources and the first and second vacuum pumps independently of the others in such a way that backpressure caused in the second passage by the second gas supply source and vacuum pump can become lower than backpressure caused in the first passage by the first gas supply source and vacuum pump.

Abstract: A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhausting the clearance through the first passage, a second passage opened in the top of the suscepter at a center area thereof, a second gas supply source for supplying heat exchange gas into the clearance through the second passage, a second vacuum pump for exhausting the clearance through the second passage, and a controller for controlling the first and second gas supply sources and the first and second vacuum pumps independently of the others in such a way that backpressure caused in the second passage by the second gas supply source and vacuum pump can become lower than backpressure caused in the first passage by the first gas supply source and vacuum pump.

Abstract: A thermoplastic resin composition of a thermoplastic resin and a fibrous magnesium oxysulfate is made to be resistant to coloring by incorporation of a boric acid or boric acid anhydride.

Abstract: A shaped electroconductive thermoplastic resin composition article having a preferable surface appearance is produced by a process including (1) mixing a matrix resinous material containing 100 parts by weight of a thermoplastic resin and, optionally, 120 parts by weight or less of a flame x retardant additive and 40 parts by weight or less of a flame retardant synergistic additive, with 1 to 15% based on the weight of the matrix resinous material, of stainless steel fibers having a length of 2.5 to 7.5 mm and adhered to each other with a thermoplastic resinous adhesive to form a number of bundles; (2) kneading the resultant mixture at an elevated temperature at which the matrix resinous material is melted and (3) shaping the kneaded mixture into a desired form, the kneading the shaping procedures being carried out so that the stainless steel fibers are uniformly dispersed in the melted matrix resinous material and the dispersed stainless steel fibers have an average length of 0.5 to 2.0 mm.

Abstract: Disclosed is a substrate for planographic (lithographic) plate, which comprises metal foils with thicknesses of 5 to 100.mu. laminated onto both surfaces of a sheet which has a thickness of 30 to 400.mu., said sheet being obtained by sheet making of a modified polyolefin composite material comprising 100 parts by weight of a modified polyolefin resin graft-modified partially or wholly with an organic silane compound and 5 to 150 parts by weight of mica.

Abstract: A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhausting the clearance through the first passage, a second passage opened in the top of the suscepter at a center area thereof, a second gas supply source for supplying heat exchange gas into the clearance through the second passage, a second vacuum pump for exhausting the clearance through the second passage, and a controller for controlling the first and second gas supply sources and the first and second vacuum pumps independently of the others in such a way that backpressure caused in the second passage by the second gas supply source and vacuum pump can become lower than backpressure caused in the first passage by the first gas supply source and vacuum pump.