Abstract: A flexible pipe unit for an exhaust pipe line of an internal combustion engine comprises a metal bellows which has a front open end adapted to be connected to a first exhaust pipe and a rear open end adapted to be connected to a second exhaust pipe. A cylindrical outer case of metal is coaxially disposed about the metal bellows in a manner to define therebetween a cylindrical space. A first structure is arranged between a front end of the outer case and a front end of the bellows to achieve a mechanical connection therebetween. A second structure is arranged between a rear end of the outer case and a rear end of the bellows to achieve a mechanical connection therebetween. At least one of the first and second structures comprises a spring member by which the bellows and the outer case are resiliently connected.

Abstract: A circular plate spring for use in a flexible pipe unit comprises an annular base portion constructed of a spring metal plate and a plurality of equally spaced resilient support portions integral with the annular base portion. The resilient support portions are raised from the annular base portion so that each support portion is inclined relative to an imaginary plane on which the annular base portion lies.

Abstract: A noise reduction system for improving the signal-to-noise ratio of a color television signal wherein a first television frame portion is recursively added to an immediately subsequent second television frame portion and the addition apparatus is controlled in response to the signal level difference between said first and second frame portions.

Abstract: This invention relates to a high power bipolar transistor comprising a collector region, a base region formed in the collector region and emitter regions formed in the base region, with each of the emitter regions being a closed loop at the surface of the base region. The emitter electrode contact region is arranged at the surface of base region and surrounded by the emitter region, and the emitter electrode contact region and emitter region are connected by a conductive area, with the conductive area being shallower than the emitter region. In addition, the conductive area is connected to the internal surface of the emitter region at one or more points but is not connected to the entire part of the internal surface of the emitter region.

Abstract: A transistor which has a plurality of ring emitter transistor units formed on a common semiconductor substrate having one conductivity type, each ring emitter transistor unit being provided with a base region of the opposite conductivity type from the semiconductor substrate and formed on its surface, an emitter region of the same conductivity type as the semiconductor substrate and formed in the base region to a depth smaller than the latter to have a ring-shaped plane configuration, a base electrode formed in the vicinity of the outer or inner periphery of the ring-shaped emitter region, an emitter electrode formed in the vicinity of the inner or outer periphery of the emitter region, and a ballasting resistor formed to interconnect the emitter region and the emitter electrode. The product of the area of the emitter region and the resistance value of the ballasting resistor is selected to be in the range of from 6.0 .times. 10.sup.-4 to 1.3 .times. 10.sup.-3 [.OMEGA..multidot.cm.sup.