Abstract: An oxide target for laser vapor deposition, which is used when an oxide film is formed in a laser vapor deposition system, including: a fixed plate, an Ag-soldering layer bonded onto the fixed plate, an oxide-Ag mixed layer bonded onto the Ag-soldering layer; and an oxide layer bonded onto the oxide-Ag mixed layer.

Abstract: An oxide target for laser vapor deposition, which is used when an oxide film is formed in a laser vapor deposition system, including: a fixed plate, an Ag-soldering layer bonded onto the fixed plate, an oxide-Ag mixed layer bonded onto the Ag-soldering layer; and an oxide layer bonded onto the oxide-Ag mixed layer.

Abstract: A method of manufacturing an oxide superconductive target for a laser vapor deposition, which is used when an oxide film is formed in a laser vapor deposition system including the steps of: mixing rare-earth oxide powder, barium carbonate powder, and copper oxide powder at a predetermined composition ratio to obtain a mixed powder; press-molding the mixed powder to form a compressed-molded, compact; and performing a partial melt molding the compressed-molded compact.

Abstract: An oxide superconductor of the present invention characterized in that it comprises: a substrate 1 made of metals having a high melting temperature; at least one oxide intermediate layer 2 and 3 which is formed on at least one surface of the substrate 1; and a thick film oxide superconductor layer 5 which is formed on the oxide intermediate layer 2 and 3 by the liquid phase epitaxial method in which the substrate 1 provided with the oxide intermediate layer 2 and 3 is put into a solution 7 containing the elements comprising an oxide superconductor layer, and is then pulled out from the solution 7.

Abstract: An oxide superconductor of the present invention characterized in that it comprises: a substrate 1 made of metals having a high melting temperature; at least one oxide intermediate layer 2 and 3 which is formed on at least one surface of the substrate 1; and a thick film oxide superconductor layer 5 which is formed on the oxide intermediate layer 2 and 3 the liquid phase epitaxial method in which the substrate 1 provided with the oxide intermediate layer 2 and 3 is put into a solution 7 containing the elements comprising an oxide superconductor layer, and is then pulled out from the solution 7.

Abstract: The present invention provides an oxide superconducting conductor A comprising an oxide buffer layer 2 on a base material 1 composed of a high melting point metal, a solid solution layer 4 having a structure similar to an oxide superconducting substance containing constituent elements of the oxide buffer layer 2 on the oxide buffer layer 2, and an oxide superconducting layer having a peritectic temperature lower than that of the solid solution layer 4 having a structure similar to an oxide superconducting substance on the solid solution layer 4 having a structure similar to an oxide superconducting substance.