Abstract: A susceptor for an epitaxial growth apparatus, which can maximize the surface utilization of the susceptor and increase the number of semiconductor wafers in a single run. The shape of the pocket for loading a semiconductor wafer at a specific position is similar to and slightly larger than that of the semiconductor wafer with an orientation flat. In addition, the pocket is so located that the orientation flat will be close to adjacent semiconductor wafers. Therefore, compared with the conventional one, the distance between centers of adjacent pockets can be reduced and the total number of the semiconductor wafers that can be loaded on the susceptor in the same surface area can be increased. After the epitaxial growth process, the semiconductor wafers can be removed from the susceptor using the notchs on the periphery of the pockets.