Abstract: A graphite heater includes a main body, and a plurality of support portions. The main body includes a tubular portion and a plurality of terminal portions. The plurality of terminal portions extend outward along a central axis of the tubular portion. Each of the plurality of terminal portions has a first planar surface facing the central axis or facing an opposite side of the central axis. The plurality of support portions are each joined to each of the plurality of terminal portions. Each of the plurality of support portions has a second planar surface. The first planar surface and the second planar surface are joined through a carbon-based adhesion layer.

Abstract: A thermal receiver includes a heat absorption body and a support body. The heat absorption body includes at least one honeycomb unit having a plurality of flow paths arranged for circulation of a heat medium. The heat absorption body includes silicon carbide. A surface of the at least one honeycomb unit to which solar light is radiated is subjected to a roughening treatment or a coating treatment. The support body accommodates and supports the heat absorption body and allows circulation of the heat medium.

Abstract: A heat collection receiver includes a heat absorption body and a support body. The heat absorption body includes at least one honeycomb unit in which a plurality of flow paths through which a heat medium passes are provided in parallel with each other. The at least one honeycomb unit includes porous silicon carbide and silicon that fills pores in the porous silicon carbide. A surface region of the at least one honeycomb unit includes a porous layer which includes pores in a predetermined depth from the surface. The surface region is irradiated with solar light. The pores of the porous layer are not filled with the silicon. The support body accommodates and supports the heat absorption body and the heat medium flows through the support body.

Abstract: A table for a wafer polishing apparatus having superior heat-resistant, anti-thermal-shock, and anti-abrasion characteristics and capable of increasing the diameter of a semiconductor wafer while improving the quality of the wafer. The table (2) includes a plurality of superimposed bases (11) each of which is formed of silicide ceramic or carbide ceramic. The bases (11) are joined together by an adhesive layer (14). A fluid passage (12) is formed in a joining interface between the bases (11).

Abstract: A table for a wafer polishing apparatus having superior heat-resistant, anti-thermal-shock, and anti-abrasion characteristics and capable of increasing the diameter of a semiconductor wafer while improving the quality of the wafer. The table includes a plurality of superimposed bases each of which is formed of silicide ceramic or carbide ceramic. The bases are joined together by an adhesive layer. A fluid passage is formed in a joining interface between the bases.

Abstract: A table for a wafer polishing apparatus having superior heat-resistant, anti-thermal-shock, and anti-abrasion characteristics and capable of increasing the diameter of a semiconductor wafer while improving the quality of the wafer. The table includes a plurality of superimposed bases each of which is formed of silicide ceramic or carbide ceramic. The bases are joined together by an adhesive layer. A fluid passage is formed in a joining interface between the bases.