Abstract: A charged particle exposure system uses a method for accurately and efficiently generating a required pattern having an optional angle .theta.. The method uses a reference isosceles right triangle. According to the reference triangle, a plurality of rectangular beams are formed. Each of the rectangular beams is multiplied by tan .theta. of the optional angle .theta., thereby preparing data of beams necessary for forming the required pattern.

Abstract: A charged particle beam exposure method is used to draw a pattern on a substrate which is carried on a continuously moving stage by deflecting a charged particle beam. The method includes moving the stage in a direction parallel to an axis of a coordinate system of the substrate; generating first deflection data D.sub.1 in a coordinate system of the stage by obtaining a position coordinate of an reference position of a pattern region including the pattern to be drawn relative to a target position of the stage, and for obtaining second deflection data D.sub.2 in a coordinate system of the substrate describing a position coordinate of the pattern to be drawn from the reference position of the pattern region to which the pattern belongs; carrying out with respect to first deflection data D.sub.

Abstract: A charged particle beam exposure system emits and deflects an electron beam (11a) toward a continuously moving exposure object (18) and draws semiconductor integrated circuit patterns on the object. The system comprises a charged particle beam generating unit (11), first and second deflectors (12 and 13) for deflecting the electron beam (11a), first and second deflector drivers (14 and 15) for controlling outputs of the first and second deflectors (12 and 13), a stage driving and controlling unit (16) for controlling the movement of the object (18), and a controller (17) for controlling the inputs and outputs of the respective components.

Abstract: A charged particle beam exposure system employs a continuously moving stage technique and a double deflection technique. The system stably deflects charged particle beams and reliably exposes a sample to the beams with no overflow. The system positively moves a major deflector from one subfield to a particular position of another subfield on the sample for period corresponding to a settling time that is usually needed for a subfield-to-subfield jump of the major deflector, and then exposes the sample to the beams.

Abstract: A cholesteric liquid crystal polyester high molecular weight polymer has, as structural units, (1) --O--Ar--CO--, (2) camphoric acid, (3) --O--R.sub.1 --O-- and (4) --CO--R.sub.2 --CO--, wherein Ar is a bivalent aromatic ring having 6-12 carbon atoms, and R.sub.1 and R.sub.2 are bivalent aromatic rings having 6-18 carbon atoms, a bivalent aliphatic chain having 2-16 carbon atoms, or a bivalent alicyclic ring having 6-18 carbon atoms. The liquid crystal polyester exhibits high physical properties, including strength and elasticity modulus, with reduced mechanical anisotropy, while exhibiting selective visible light reflection under certain conditions.