Abstract: A rotary electric machine includes a stator including a coil, and a rotor in an inner peripheral side of the stator. The rotor core comprises a soft magnetic metal and a magnet within a magnet insertion hole, a first magnet stopper on a q axis side of the magnet in the magnet insertion hole, a magnet accommodation between the first magnet stopper on both sides of the magnet insertion hole, a first space portion communicating with the magnet insertion hole, a second space portion whose distance from the magnet is equal to or less than a thickness of the magnet and a radial length of a magnetic pole center is long, the second space portion formed on an inner peripheral side relative to the magnet, and a third space portion that has a convex shape on an inner peripheral side of a q axis of the magnet.

Abstract: A cogging torque in a rotary electric machine is sufficiently reduced. The rotor core includes a magnetic pole having the base formed on the outer peripheral side of the storage space. A plurality of magnetic poles are provided in the circumferential direction, and include the first protrusion protruding from the base in one circumferential direction along the outer periphery of the rotor core, and the second protrusion which is provided on the opposite side to with the base interposed and protrudes from the base along the outer periphery of the rotor core in the other circumferential direction. At least one of the first protrusion and the second protrusion is located on the outer peripheral side from the first line segment which is a virtual line connecting the end of the first protrusion and the end of the second protrusion, and is provided such that the space is provided with respect to the first line segment.

Abstract: A torque ripple in a rotary electric machine is sufficiently reduced. At least two of the plurality of laminated plates in the rotor core include a magnetic pole having the base formed on the outer peripheral side of the storage space, and a bridge part connected to the magnetic pole. A plurality of magnetic poles are provided in the circumferential direction, and the first space is formed between the bases of a pair of magnetic poles adjacent in the circumferential direction. The q-axis outer peripheral portion, which is located between the pair of circumferentially adjacent magnetic poles and is in contact with the first space, is provided on the inner peripheral side of the base. The base includes the side surface portion which is in contact with the first space, and the protrusion which is provided on the outer peripheral side of the side surface portion and protrudes in the circumferential direction with respect to the side surface portion.

Abstract: A cogging torque in a rotary electric machine is sufficiently reduced. The rotor core includes a magnetic pole having the base formed on the outer peripheral side of the storage space. A plurality of magnetic poles are provided in the circumferential direction, and include the first protrusion protruding from the base in one circumferential direction along the outer periphery of the rotor core, and the second protrusion which is provided on the opposite side to with the base interposed and protrudes from the base along the outer periphery of the rotor core in the other circumferential direction. At least one of the first protrusion and the second protrusion is located on the outer peripheral side from the first line segment which is a virtual line connecting the end of the first protrusion and the end of the second protrusion, and is provided such that the space is provided with respect to the first line segment.

Abstract: A torque ripple in a rotary electric machine is sufficiently reduced. At least two of the plurality of laminated plates in the rotor core include a magnetic pole having the base formed on the outer peripheral side of the storage space, and a bridge part connected to the magnetic pole. A plurality of magnetic poles are provided in the circumferential direction, and the first space is formed between the bases of a pair of magnetic poles adjacent in the circumferential direction. The q-axis outer peripheral portion, which is located between the pair of circumferentially adjacent magnetic poles and is in contact with the first space, is provided on the inner peripheral side of the base. The base includes the side surface portion which is in contact with the first space, and the protrusion which is provided on the outer peripheral side of the side surface portion and protrudes in the circumferential direction with respect to the side surface portion.

Abstract: In a calculation method of calculating a switching wave form of an inverter by expressing a wave form obtained by measurement or simulation using a function formula, an intermediate terminal is provided between an upper terminal and a lower terminal of an inverter arm and a power supply of a voltage function formula is provided between the upper terminal and the intermediate terminal or the intermediate terminal and the lower terminal. Further, it may be configured such that a variation impact from peripheral circuits at time of switching is calculated and voltage correction calculation is performed to prevent the calculated switching wave form from changing due to the calculation of the variation impact.

Abstract: An object of the invention is to provide a concentrated winding brushless motor of a permanent magnet type, in which a lead wire and a jumper wire to a tooth far away from the adjacent tooth are disposed at the ends of coils on an axially reverse side in order to make a manufacturing work of coils efficient.

Abstract: In a magnetic field analysis calculation, there is a need to consider a characteristic that a magnetic field and a flux density face in different directions from each other by a stress in a magnetic material. Therefore, a measured value of a magnetic characteristic on a condition that the magnetic field, the magnetic flux density, and a mechanical stress are parallel is used. In a method and a device for magnetic field analysis calculation, a stress magnetic anisotropy is calculated using a relation between a magnetostriction of the magnetic material, the magnetic flux density, and the stress and a relation between a magnetization curve of the magnetic material, the magnetic flux density, and the stress which are measured on a condition that the magnetic field and the stress in the magnetic material are parallel.

Abstract: The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions. To accomplish the above object, a charged particle beam irradiation method and a charged particle beam apparatus are provided according to which the pre-dosing area is divided into a plurality of divisional areas and electrifications are deposited to the plural divisional areas by using a beam under different beam irradiation conditions.

Abstract: In a calculation method of calculating a switching wave form of an inverter by expressing a wave form obtained by measurement or simulation using a function formula, an intermediate terminal is provided between an upper terminal and a lower terminal of an inverter arm and a power supply of a voltage function formula is provided between the upper terminal and the intermediate terminal or the intermediate terminal and the lower terminal. Further, it may be configured such that a variation impact from peripheral circuits at time of switching is calculated and voltage correction calculation is performed to prevent the calculated switching wave form from changing due to the calculation of the variation impact.

Abstract: A method for efficiently carrying out an analysis and computation using mesh structures is disclosed. When an insulator is brought into contact with two conductors, the mesh structures are generated and a displacement current is analyzed. In the generated structures, the insulator is considered a three-dimensional mesh structure and at least a portion of the conductor brought into contact with the insulator is considered a three-dimensional structure whereas the other portions are taken as a one- or two-dimensional structures. In an alternative, the insulator is considered a three-dimensional structure and at least a portion of the conductor brought into contact with the insulator is considered a three-dimensional structure whereas the other portions are considered three- to one-dimensional structures. In the conductor, a short-circuit section with no mesh elements is provided between at least a portion brought into contact with the insulator and the other portions.

Abstract: The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions. To accomplish the above object, a charged particle beam irradiation method and a charged particle beam apparatus are provided according to which the pre-dosing area is divided into a plurality of divisional areas and electrifications are deposited to the plural divisional areas by using a beam under different beam irradiation conditions.

Abstract: In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

Abstract: In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

Abstract: An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.

Abstract: In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

Abstract: An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.

Abstract: The following defects are suppressed: when an interlayer insulating film including a silicon carbide film and an organic insulating film is dry-etched to form interconnection grooves over underlying Cu interconnections, an insulating reactant adheres to the surface of the underlying Cu interconnections exposed to the bottom of the interconnection grooves, or the silicon carbide film or the organic insulating film exposed to the side walls of the interconnection grooves are side-etched.

Abstract: In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

Abstract: To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.